Abstract: Certain aspects of the present disclosure can be implemented in an electroacoustic device. The electroacoustic device generally includes: a substrate; a bottom electrode layer disposed above the substrate; an acoustic mirror stack having a dielectric layer disposed above the bottom electrode layer and a conductive layer disposed above the dielectric layer; a piezoelectric layer disposed above the acoustic mirror stack; and one or more vias disposed between the bottom electrode layer and the conductive layer, the one or more vias electrically coupling the bottom electrode layer and the conductive layer.

Abstract: A BAW resonator (BAWR) with improved power durability and improved heat resistance is provided. The resonator comprises a layer stack with a piezoelectric material (PM) between a bottom electrode (ELI) and a top electrode (EL2) and a shunt path parallel (PCPP) to the layer stack provided to enable an RF signal to bypass the layer stack, e.g. to ground (GND). The shunt path (PCPP) has a temperature dependent conductance with a negative temperature coefficient, NTC, of resistance. When the temperature of the device rises due to high power operation, currents that would otherwise permanently damage the device are shunted to ground or another dedicated terminal by the temperature dependent shunt path. Upon cooling down normal operation is resumed.

Abstract: A BAW device comprises a first BAW resonator (1) and a second BAW resonator (2). The first BAW resonator and the second BAW resonator each comprise a first electrode (11, 21), a second electrode (12, 22) and a piezoelectric layer (13, 23) being arranged in each case between the first electrode and the second electrode of the associated BAW resonator. The first electrodes, the second electrodes and the piezoelectric layers of both BAW resonators are designed essentially identically. A first conductor track (24) extends from the first electrode of the second BAW resonator to a third electric element (3) of the BAW device and electrically connects said first electrode with said third electric element. A first dummy conductor track (14) extends from the first electrode of the first BAW resonator, is electrically connected to said first electrode and, apart from said first electrode, is not electrically connected to any further electric element.

Abstract: Certain aspects of the present disclosure can be implemented in an electroacoustic device. The electroacoustic device generally includes: a substrate; a bottom electrode layer disposed above the substrate; an acoustic mirror stack having a dielectric layer disposed above the bottom electrode layer and a conductive layer disposed above the dielectric layer; a piezoelectric layer disposed above the acoustic mirror stack; and one or more vias disposed between the bottom electrode layer and the conductive layer, the one or more vias electrically coupling the bottom electrode layer and the conductive layer.

Abstract: In certain aspects, a method for reducing coupling coefficient variation includes receiving one or more measured coupling coefficients of one or more acoustic resonators, determining a coupling coefficient change based on the one or more measured coupling coefficients, and determining a change in a dimension of a lateral feature based on the determined coupling coefficient change.

Abstract: It is proposed to enhance the bandwidth of a SMR BAW resonator (TE,PL,BE) by circuiting it with a planar coil (WG1, WG2) that is realized in a high impedance layer (HI) of the Bragg mirror (BM) or in an additional metal layer below the Bragg mirror.

Abstract: A BAW resonator (BAWR) with improved power durability and improved heat resistance is provided. The resonator comprises a layer stack with a piezoelectric material (PM) between a bottom electrode (ELI) and a top electrode (EL2) and a shunt path parallel (PCPP) to the layer stack provided to enable an RF signal to bypass the layer stack, e.g. to ground (GND). The shunt path (PCPP) has a temperature dependent conductance with a negative temperature coefficient, NTC, of resistance. When the temperature of the device rises due to high power operation, currents that would otherwise permanently damage the device are shunted to ground or another dedicated terminal by the temperature dependent shunt path. Upon cooling down normal operation is resumed.

Abstract: The invention relates to a device for stabilizing the supply to a consumer from a buffer store, wherein during normal operation the consumer is supplied from an energy store. The device, which includes a DC-to-DC converter, a plurality of controllable switching elements and a control unit, is configured to (i) supply the consumer during normal operation, while bypassing components having power losses, directly from the energy store when the input voltage is greater than a preset first limit voltage, (ii) supply the consumer via the DC-to-DC converter fed from the energy store when the input voltage is below the first preset limit voltage, wherein the DC-to-DC converter converts the input voltage into an operating voltage of the consumer, and (iii) feed the DC-to-DC converter from the buffer store when the input voltage is below a second preset limit voltage until a voltage of the buffer store reaches the second preset limit voltage.

Abstract: The invention relates to a device for stabilizing the supply to a consumer from a buffer store, wherein during normal operation the consumer is supplied from an energy store. The device, which includes a DC-to-DC converter, a plurality of controllable switching elements and a control unit, is configured to (i) supply the consumer during normal operation, while bypassing components having power losses, directly from the energy store when the input voltage is greater than a preset first limit voltage, (ii) supply the consumer via the DC-to-DC converter fed from the energy store when the input voltage is below the first preset limit voltage, wherein the DC-to-DC converter converts the input voltage into an operating voltage of the consumer, and (iii) feed the DC-to-DC converter from the buffer store when the input voltage is below a second preset limit voltage until a voltage of the buffer store reaches the second preset limit voltage.