Abstract: A process for purifying a recombinant protein comprising the steps of: i) providing a solution comprising the recombinant protein; ii) adding an alkyl glycoside to the solution; and iii) purifying the recombinant protein. The addition of the alkyl glycoside provides improved clearance of process-related impurities. The purified recombinant protein of the invention has low levels of host cell DNA, host cell protein and viral contamination.

Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

Abstract: An apparatus and method are provided for controlling the intensity and distribution of a plasma discharge in a plasma chamber. In one embodiment, a shaped electrode is embedded in a substrate support to provide an electric field with radial and axial components inside the chamber. In another embodiment, the face plate electrode of the showerhead assembly is divided into zones by isolators, enabling different voltages to be applied to the different zones. Additionally, one or more electrodes may be embedded in the chamber side walls.

Abstract: The present invention relates to a method of filtrating a solution comprising von Willebrand Factor (VWF), the method comprising (a) providing a solution comprising VWF and a basic amino acid; and (b) subjecting the solution of step (a) to a virus filtration through a filter having a pore size of less than or equal to 35 nm.

Abstract: Embodiments of the present invention provide apparatus and methods for performing UV treatment and chemical treatment and/or deposition in the same chamber. One embodiment of the present invention provides a processing chamber including a UV transparent gas distribution showerhead disposed above a substrate support located in an inner volume of the processing chamber, a UV transparent window disposed above the UV transparent gas distribution showerhead, and a UV unit disposed outside the inner volume. The UV unit is configured to direct UV lights towards the substrate support through the UV transparent window and the UV transparent gas distribution showerhead.

Abstract: A nozzle unit for a reaction molding machine, comprising an inlet channel prepared for connection to a mixing head outlet and comprising a first dispensing nozzle, which is prepared for applying a reactive mixture and which is connected to the inlet channel in a first operating state, a second dispensing nozzle being present, which is connected to the inlet channel in a second operating state and which is likewise prepared for applying a reactive mixture. Further disclosed is a mixing head device for a reaction molding machine having the nozzle unit, to a reaction molding machine having the mixing head device, and to a method for producing a plastic part.

Abstract: A monitoring and deposition control system and method of operation thereof including: a deposition chamber for depositing a material layer on a substrate; a sensor array for monitoring deposition of the material layer for changes in a layer thickness of the material layer during deposition; and a processing unit for adjusting deposition parameters based on the changes in the layer thickness during deposition.

Abstract: Embodiments described herein generally relate to a particle collection apparatus and probe head for the collection of particles on process tool components. In one embodiment, a particle collection apparatus for counting particles present on a processing tool component is disclosed herein. The particle collection apparatus includes a particle collector. The particle collector is configured to scan a processing tool component and collect particles collected from the processing tool component. The particle collector includes a body and a probe head coupled to the body. The probe head has a probe body and a controlled spacing element. The controlled spacing element is coupled to the probe body and is configured to form a uniform manifold between the probe body and the processing tool component.

Abstract: A method and apparatus for heating a substrate in a chamber are provided. an apparatus for positioning a substrate in a processing chamber. In one embodiment, the apparatus comprises a substrate support assembly having a support surface adapted to receive the substrate and a plurality of centering fingers for supporting the substrate at a distance parallel to the support surface and for centering the substrate relative to a reference axis substantially perpendicular to the support surface. The plurality of the centering fingers are movably disposed along a periphery of the support surface, and each of the plurality of centering fingers comprises a first end portion for either contacting or supporting a peripheral edge of the substrate.

Abstract: A system for processing an electromagnetic signal is described, wherein the system comprises a transmission path with limited dynamic range and a pre-selection unit that is positioned upstream the transmission path. The pre-selection unit is configured to pre-select signal portions and to control the level of the output electromagnetic signal. Further, a method for processing an electromagnetic signal is described.

Abstract: A method and apparatus for heating a substrate in a chamber are provided. an apparatus for positioning a substrate in a processing chamber. In one embodiment, the apparatus comprises a substrate support assembly having a support surface adapted to receive the substrate and a plurality of centering members for supporting the substrate at a distance parallel to the support surface and for centering the substrate relative to a reference axis substantially perpendicular to the support surface. The plurality of the centering members are movably disposed along a periphery of the support surface, and each of the plurality of centering members comprises a first end portion for either contacting or supporting a peripheral edge of the substrate.

Abstract: A method and apparatus for cleaning a process chamber are provided. In one embodiment, a process chamber is provided that includes a remote plasma source and a process chamber having at least two processing regions. Each processing region includes a substrate support assembly disposed in the processing region, a gas distribution system configured to provide gas into the processing region above the substrate support assembly, and a gas passage configured to provide gas into the processing region below the substrate support assembly. A first gas conduit is configured to flow a cleaning agent from the remote plasma source through the gas distribution assembly in each processing region while a second gas conduit is configured to divert a portion of the cleaning agent from the first gas conduit to the gas passage of each processing region.

Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

Abstract: Apparatus and method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

Abstract: A system for processing an electromagnetic signal is described, wherein the system comprises a transmission path with limited dynamic range and a pre-selection unit that is positioned upstream the transmission path. The pre-selection unit is configured to pre-select signal portions and to control the level of the output electromagnetic signal. Further, a method for processing an electromagnetic signal is described.

Abstract: A monitoring and deposition control system and method of operation thereof including: a deposition chamber for depositing a material layer on a substrate; a sensor array for monitoring deposition of the material layer for changes in a layer thickness of the material layer during deposition; and a processing unit for adjusting deposition parameters based on the changes in the layer thickness during deposition.

Abstract: An apparatus and method are provided for controlling the intensity and distribution of a plasma discharge in a plasma chamber. In one embodiment, a shaped electrode is embedded in a substrate support to provide an electric field with radial and axial components inside the chamber. In another embodiment, the face plate electrode of the showerhead assembly is divided into zones by isolators, enabling different voltages to be applied to the different zones. Additionally, one or more electrodes may be embedded in the chamber side walls.

Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

Abstract: A monitoring and deposition control system and method of operation thereof including: a deposition chamber for depositing a material layer on a substrate; a sensor array for monitoring deposition of the material layer for changes in a layer thickness of the material layer during deposition; and a processing unit for adjusting deposition parameters based on the changes in the layer thickness during deposition.