Patents by Inventor THOMAS POLLARD

THOMAS POLLARD has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11949400
    Abstract: A layer system especially for forming SAW devices thereon is proposed comprising a monocrystalline sapphire substrate having a first surface and a crystalline piezoelectric layer comprising MN, deposited onto the first surface, and having a second surface. As a first surface a crystallographic R-plane of sapphire is used enabling an orientation of c-axis of the piezoelectric layer parallel to the first and second surfaces.
    Type: Grant
    Filed: February 4, 2019
    Date of Patent: April 2, 2024
    Assignee: RF360 Singapore Pte. Ltd.
    Inventors: Thomas Metzger, Yoshikazu Kihara, Thomas Pollard
  • Patent number: 11595017
    Abstract: A high Q acoustic BAW resonator with high coupling and improved spurious mode suppression is given. The BAW resonator comprises an active resonator region (AR) formed by an overlap of the three layers bottom electrode (BE), piezoelectric layer (PL) and top electrode layer (TE). An inner-flap (IF) is formed by a dielectric 3D structure sitting on a marginal region (MR) of the active resonator region (AR) or adjacent thereto, extending inwardly towards the center thereof and having a section that runs in parallel and distant to the top surface of the resonator keeping an inner gap (IG) thereto or an angle ?.
    Type: Grant
    Filed: August 2, 2018
    Date of Patent: February 28, 2023
    Assignee: RF360 Europe GMBH
    Inventors: Thomas Pollard, Alexandre Augusto Shirakawa
  • Publication number: 20210013862
    Abstract: A layer system especially for forming SAW devices thereon is proposed comprising a monocrystalline sapphire substrate having a first surface and a crystalline piezoelectric layer comprising MN, deposited onto the first surface, and having a second surface. As a first surface a crystallographic R-plane of sapphire is used enabling an orientation of c-axis of the piezoelectric layer parallel to the first and second surfaces.
    Type: Application
    Filed: February 4, 2019
    Publication date: January 14, 2021
    Inventors: Thomas METZGER, Yoshikazu KIHARA, Thomas POLLARD
  • Publication number: 20200366266
    Abstract: A high Q acoustic BAW resonator with high coupling and improved spurious mode suppression is given. The BAW resonator comprises an active resonator region (AR) formed by an overlap of the three layers bottom electrode (BE), piezoelectric layer (PL) and top electrode layer (TE). An inner-flap (IF) is formed by a dielectric 3D structure sitting on a marginal region (MR) of the active resonator region (AR) or adjacent thereto, extending inwardly towards the center thereof and having a section that runs in parallel and distant to the top surface of the resonator keeping an inner gap (IG) thereto or an angle ?.
    Type: Application
    Filed: August 2, 2018
    Publication date: November 19, 2020
    Inventors: Thomas POLLARD, Alexandre Augusto SHIRAKAWA
  • Publication number: 20150013461
    Abstract: A SAW mode sensor for sensing parameters such as temperature, pressure, and strain. The sensor is made of a piezoelectric crystal cut at selected angles, with an attached electrode layer with a signal receiver and signal transmitter. The signal receiver initiates a wave in the substrate which propagates in the substrate and the speed of the wave and amplitude of the wave is interpreted as the parameter being sensed.
    Type: Application
    Filed: July 14, 2014
    Publication date: January 15, 2015
    Inventors: THOMAS POLLARD, DONALD McCANN