Abstract: A method for fabricating an integrated circuit using a photo-lithographic process includes the steps of placing at least two anti-reflective coating layers between a reflective surface and another material. The indices of refraction, absorptions, and thicknesses of the at least two anti-reflective coating layers are chosen such that the amplitudes and phase differences of radiation reflected from the anti-reflective coating layers, as well as any other reflective surfaces below the anti-reflective coating layers, mutually cancel when combined. The invention may be practiced using more than two layers of anti-reflective coating. Multiple layers of anti-reflective coating may be used below an inter-level dielectric, in which case they may serve the additional purpose of functioning as an etch-stop.

Abstract: A method for fabricating an integrated circuit using a photo-lithographic process includes the steps of placing at least two anti-reflective coating layers between a reflective surface and another material. The indices of refraction, absorptions, and thicknesses of the at least two anti-reflective coating layers are chosen such that the amplitudes and phase differences of radiation reflected from the anti-reflective coating, layers, as well as any other reflective surfaces below the anti-reflective coating layers, mutually cancel when combined. The invention may be practiced using more than two layers of anti-reflective coating. Multiple layers of anti-reflective coating may be used below an inter-level dielectric, in which case they may serve the additional purpose of functioning as an etch-stop.

Abstract: In one aspect, the invention includes a semiconductor processing method comprising a) forming a metal silicide layer over a substrate; b) depositing a layer comprising silicon, nitrogen and oxygen over the metal silicide layer; and c) while the layer comprising silicon, nitrogen and oxygen is over the metal silicide layer, annealing the metal silicide layer.

Abstract: In one aspect, the invention includes a semiconductor processing method comprising a) forming a metal silicide layer over a substrate; b) depositing a layer comprising silicon, nitrogen and oxygen over the metal silicide layer; and c) while the layer comprising silicon, nitrogen and oxygen is over the metal silicide layer, annealing the metal silicide layer.

Abstract: A surface treatment method for use in integrated circuit fabrication includes providing a substrate assembly having a surface. A liquid is provided adjacent the surface resulting in an interface therebetween. An electrical potential difference is applied across the interface and the surface is treated as the electrical potential difference is applied across the interface. The liquid may be a planarization liquid when the treatment of the surface includes planarizing a substrate assembly or the liquid may be a coating material when the treatment of the surface includes applying a coating material on the surface.

Abstract: A laser ablation mask, a method of mask production, and an process of workpiece irradiation are provided. In accordance with one embodiment of the present invention, a method of producing a radiation reflective mask is provided comprising the steps of: (i) providing a substrate, wherein the substrate is transparent to radiation of a selected range of wavelengths; (ii) forming a metallic layer over an upper surface of the substrate, wherein the metallic layer is reflective of the selected wavelengths of radiation; (iii) forming at least one pair of dielectric layers over an upper surface of the metallic layer, wherein the pair of dielectric layers are arranged to reflect incident radiation at the selected wavelengths; and (iv) patterning the metallic layer and the pair of dielectric layers to form apertures therein, wherein the apertures render portions of the mask transparent to the selected wavelengths of radiation.

Abstract: An oxidation diffusion barrier stack includes an inorganic antireflective material layer formed on a semiconductor substrate assembly and an oxidation diffusion barrier layer formed on the inorganic antireflective material layer. Further, another oxidation diffusion barrier stack may include a pad oxide layer formed on a semiconductor substrate, an oxidation diffusion barrier layer, and an inorganic antireflective material layered between the pad oxide and the oxidation diffusion barrier layer. Yet further another oxidation diffusion barrier stack may include a first oxidation diffusion barrier layer, a second oxidation diffusion barrier layer, and an inorganic antireflective material layered between the first and second oxidation diffusion barrier layers.

Abstract: A method of forming an oxidation diffusion barrier stack for use in fabrication of integrated circuits includes forming an inorganic antireflective material layer on a semiconductor substrate assembly with an oxidation diffusion barrier layer then formed on the inorganic antireflective material layer. Another method of forming such a stack includes forming a pad oxide layer on the semiconductor substrate assembly with an inorganic antireflective material layer then formed on the pad oxide layer and an oxidation diffusion barrier layer formed on the antireflective material layer. Another method of forming the stack includes forming a pad oxide layer on the semiconductor substrate assembly. A first oxidation diffusion barrier layer is then formed on the pad oxide layer, an inorganic antireflective material layer is formed on the first oxidation diffusion barrier layer, and a second oxidation diffusion barrier layer is formed on the inorganic antireflective material layer.

Abstract: A surface treatment method for use in integrated circuit fabrication includes providing a substrate assembly having a surface. A liquid is provided adjacent the surface resulting in an interface therebetween. An electrical potential difference is applied across the interface and the surface is treated as the electrical potential difference is applied across the interface. The liquid may be a planarization liquid when the treatment of the surface includes planarizing a substrate assembly or the liquid may be a coating material when the treatment of the surface includes applying a coating material on the surface.

Abstract: Disclosed is a method of assaying, in assay apparatus, for at least the ligand intended to be used to assay analyte in a sample, with which analyte the ligand will specifically bind. The method provides a product in which a ligand is labeled with a detectable tag and is immobilized on an appropriate substrate. An assay is made to measure the immobilized, labeled ligand by detecting the tag labeling the latter. The product can then be used to assay for the analyte by contacting the latter so as to form a complex. The extent and rate of specific binding of the analyte in the complex is identifiable, either by competition assay or sandwich assay as a rate of change, so the relative proportions of analyte and ligand are readily determinable.

Abstract: A system for assaying a fluid sample by detection of radiation emitted from a ligand/conjugate complex formed on a plurality of beads dimensioned within a specified range of diameters, the beads being disposed as a porous mass in a conduit adjacent a fluid-porous screen having pores of lesser diameter than the range of diameters of the beads. A plurality of paramagnetic particles is suspended across the conduit by a magnetic field of sufficient intensity to array the paramagnetic particles as the fluid-porous screen.

Abstract: In accordance with an illustrative embodiment of the present invention, an expansible chamber device includes a piston movable within a cylinder, a head on the cylinder having intake and exhaust ports, a normally-open intake valve for closing the intake port automatically when the flow rate or velocity of a working medium entering the cylinder reaches a predetermined value, variable restraining means for inhibiting closing of the intake valve in response to flow, an exhaust valve for preventing escape of working medium from the cylinder until cylinder pressure is reduced to a set level, spring means for opening the exhaust valve at that level, and means operable near the top-dead-center position of the piston for automatically opening the intake valve and for closing the exhaust valve to enable the cycle to repeat. A unique system for controlling the variable restraining means, as well as methods for regulating the flow or working medium through said valves, also is disclosed.

Abstract: In accordance with an illustrative embodiment of the present invention, an expansible chamber device includes a piston movable within a cylinder, a head on the cylinder having intake and exhaust ports, a normally-open intake valve for closing the intake port automatically when the flow rate or velocity of a working medium entering the cylinder reaches a predetermined value, variable restraining means for inhibiting closing of the intake valve in response to flow, an exhaust valve for preventing excape of working medium from the cylinder until cylinder pressure is reduced to a set level, spring means for opening the exhaust valve at that level, and means operable near the top-dead-center position of the piston for automatically opening the intake valve and for closing the exhaust valve to enable the cycle to repeat. A unique system for controlling the variable restraining means, as well as methods for regulating the flow or working medium through said valves, also is disclosed.

Abstract: In accordance with an illustrative embodiment of the present invention, an expansible chamber device includes a piston movable within a cylinder, a head on the cylinder having intake and exhaust ports, a normally-open intake valve for closing the intake port automatically when the flow rate or velocity of a working medium entering the cylinder reaches a predetermined value, variable restraining means for inhibiting closing of the intake valve in response to flow, an exhaust valve for preventing escape of working medium from the cylinder until cylinder pressure is reduced to a set level, spring means for opening the exhaust valve at that level, and means operable near the top-dead-center position of the piston for automatically opening the intake valve and for closing the exhaust valve to enable the cycle to repeat. A unique system for controlling the variable restraining means, as well as methods for regulating the flow or working medium through said valves, also is disclosed.

Abstract: An assay apparatus employing total internal reflection of excitation radiation at the interface between a replaceable optically conductive rod or fiber and a surrounding liquid phase of lower index of refraction. Immobilized on the surface of the fiber is a component of a complex formed in an immunological-type specific reaction. A fluorophore that can be excited into fluorescence by the excitation radiation is attached to another component of the complex. The rod is coaxially mounted within a tube that is sized with respect to said rod so that a fluid sample may be introduced into said tube.The rod and tubing are supported in a mounting assembly that is attachable to an optical assembly for transmitting excitation radiation into the proximal end of the rod and receiving fluorescent radiation emitted from the proximal end of the rod. Included in the apparatus is a mounting assembly for centering the rod within tube and for biasing the rod in a first direction against an annular seat.

Abstract: An assay apparatus employing total internal reflection of excitation radiation at the interface between an optically conductive rod or fiber and a surrounding liquid phase of lower index of refraction. Immobilized on the surface of the fiber is a component of a complex formed in an immunochemical-type reaction; a fluorophore that can be excited into fluorescence by the excitation radiation is attached to another component of the complex. The fiber is coaxially mounted in cantelivered position within a length of tubing, so that the excitation radiation can be launched into the unsupported end of the fiber and the fluorescent radiation tunneling back into the fiber may be observed at the same fiber end.