Abstract: The present invention encompasses polymer compositions comprising aliphatic polycarbonate chains containing sites of olefinic unsaturation. In certain embodiments the aliphatic polycarbonate chains comprise sites of olefinic unsaturation capable of participating in radical-promoted olefin polymerizations. In certain embodiments, the invention encompasses composites formed by the polymerization or cross-linking of a combination of olefinic monomers and aliphatic polycarbonate chains containing sites of olefinic unsaturation.

Abstract: The present invention encompasses polymer compositions comprising aliphatic polycarbonate chains containing sites of olefinic unsaturation. In certain embodiments the aliphatic polycarbonate chains comprise sites of olefinic unsaturation capable of participating in radical-promoted olefin polymerizations. In certain embodiments, the invention encompasses composites formed by the polymerization or cross-linking of a combination of olefinic monomers and aliphatic polycarbonate chains containing sites of olefinic unsaturation.

Abstract: A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide naphthalene-based compound having, attached to one or both of the imide nitrogen atoms, a substituted or unsubstituted heterocycloalkyl ring system. Such transistors can further comprise spaced apart first and second contacts or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 200° C.

Abstract: A thin film transistor comprises a layer of organic semiconductor material comprising a configurationally controlled N,N?-dicycloalkyl-substituted naphthalene-1,4,5,8-bis-carboximide compound having a substituted or unsubstituted alicyclic ring independently attached to each imide nitrogen atom with the proviso that at least one of the two alicyclic rings is necessarily a 4-substituted cyclohexyl ring in which a substituent at the 4-position is the sole substituent on the 4-substituted cyclohexyl ring other than the imide attachment; with such substituent being stereochemically disposed as only one of either an essentially trans or cis position, respectively, to the imide nitrogen substituent. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material.

Abstract: A thin layer of organic semiconductor material comprising a comprising an organic semiconductor thin film material is disclosed in which the thin film material substantially comprises a heteropyrene compound or derivative. In one embodiment, a thin film transistor comprises a layer of the organic semiconductor material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by relative low-temperature sublimation or solution-phase deposition onto a substrate.

Abstract: A thin film transistor comprises a layer of organic semiconductor that comprises an N,N?-1,4,5,8-naphthalenetetracarboxylic acid diimide having at least one cycloalkyl group having a fluorinated substituent at its 4-position that adopts an equatorial orientation in the trans configuration of the cycloalkyl group and an axial orientation in the cis configuration of the cycloalkyl group. Such transistors can be a field effect transistor having a dielectric layer, a gate electrode, a source electrode and a drain electrode. The gate electrode and the thin film of organic semiconductor material both contact the dielectric layer, and the source electrode and the drain electrode both contact the thin film of organic semiconductor material.

Abstract: A thin film transistor comprises a layer of organic semiconductor that comprises an N,N?-1,4,5,8-naphthalenetetracarboxylic acid diimide having at least one cycloalkyl group having a fluorinated substituent at its 4-position that adopts an equatorial orientation in the trans configuration of the cycloalkyl group and an axial orientation in the cis configuration of the cycloalkyl group. Such transistors can be a field effect transistor having a dielectric layer, a gate electrode, a source electrode and a drain electrode. The gate electrode and the thin film of organic semiconductor material both contact the dielectric layer, and the source electrode and the drain electrode both contact the thin film of organic semiconductor material.

Abstract: The present invention relates to a photoalignable material comprising a photoactive stilbazolium-containing polymer of formula I: wherein, Ma, Mb, Mc are monomer units making up the polymer; x, y, z, are mole fractions of the monomer units Ma, Mb, Mc, wherein in each case 0<x?1; 0?y<1, 0?z<1; Sa and Sb are spacer units; Za is a stilbazolium unit which can undergo photochemical isomerization/dimerization reactions; Zb is a stilbazole unit, and n varies from 4 to 10,000. The present invention also relates to a display using a layer of the photoaligned material and methods for aligning the orientation layer as well as orienting a liquid crystal layer applied to the photoaligned orientation layer.

Abstract: A thin layer of organic semiconductor material comprising a comprising an organic semiconductor thin film material is disclosed in which the thin film material substantially comprises a heteropyrene compound or derivative. In one embodiment, a thin film transistor comprises a layer of the organic semiconductor material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by relative low-temperature sublimation or solution-phase deposition onto a substrate.

Abstract: A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide naphthalene-based compound having, attached to one or both of the imide nitrogen atoms, a substituted or unsubstituted heterocycloalkyl ring system. Such transistors can further comprise spaced apart first and second contacts or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 200° C.

Abstract: The present invention relates to a phototunable chiral dopant represented by the following structure: wherein: A, B, C and D are independent divalent groups; X and Z are any independently selected substituent; n is an integer and independently varies from 0 to 3; q is an integer and independently varies from 0 to 5; RNG1 and RNG2 independently represent any ring group; m represents an integer independently varying from 0 to 4; p represents an integer independently varying from 1 to 4; Q independently represents a carbon C—RC, or nitrogen, wherein RC is independently hydrogen or any substituent. The invention also relates to the use of the dopant in a liquid crystalline composition and a display containing the same, as well as a material composition comprising an enantiomeric excess of one enantiomer of the compound.

Abstract: The present invention relates to a phototunable chiral dopant represented by the following structure: wherein: A, B, C and D are independent divalent groups; X and Z are any independently selected substituent; n is an integer and independently varies from 0 to 3; q is an integer and independently varies from 0 to 5; RNG1 and RNG2 independently represent any ring group; m represents an integer independently varying from 0 to 4; p represents an integer independently varying from 1 to 4; Q independently represents a carbon C—RC, or nitrogen, wherein RC is independently hydrogen or any substituent. The invention also relates to the use of the dopant in a liquid crystalline composition and a display containing the same, as well as a material composition comprising an enantiomeric excess of one enantiomer of the compound.

Abstract: A thin film transistor comprises a layer of organic semiconductor material comprising a configurationally controlled N,N?-dicycloalkyl-substituted naphthalene-1,4,5,8-bis-carboximide compound having a substituted or unsubstituted alicyclic ring independently attached to each imide nitrogen atom with the proviso that at least one of the two alicyclic rings is necessarily a 4-substituted cyclohexyl ring in which a substituent at the 4-position is the sole substituent on the 4-substituted cyclohexyl ring other than the imide attachment; with such substituent being stereochemically disposed as only one of either an essentially trans or cis position, respectively, to the imide nitrogen substituent. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material.

Abstract: The present invention relates to a chiral compound, and an article utilizing the same, represented by the following structures I-1, I-2, I-3, or 1-4: wherein the chiral compound demonstrates thermochromic temperature insensitivity.

Abstract: Disclosed is a multilayer film comprising a substrate bearing an aligned liquid crystal layer wherein the liquid crystal layer contains a Lewis acid. Such a film is useful for aligning a liquid crystal material to an increased tilt angle.

Abstract: The present invention relates to a method for the chemical separation of the enantiomers of 1,1?-spirobiindane-6,6?-diol derivatives comprising providing a racemic chiral 1,1?-spirobiindane-6,6?-diol derivative, reacting a nonracemic chiral component with the racemic chiral 1,1?-spirobiindane-6,6?-diol derivative to afford a mixture of diastereomeric diesters, separating the mixture of diastereomeric diesters to provide a substantially pure individual diastereomeric diester, and chemically removing the ester groups from the substantially pure individual diastereomeric diester to provide a nonracemic chiral 1,1?-spirobiindane-6,6?-diol derivative.

Abstract: The invention relates to a class of compounds useful as chiral dopants, which compounds are available in both enantiomeric forms, in liquid-crystal formulations. Such formulations are advantageous in displays and various other products.

Abstract: The present invention relates to a bistable polymer dispersed liquid crystal display comprising a support, at least one patterned first conductor layer having thereon at least one dried imaging layer comprising a substantial monolayer of isolated domains of liquid crystal material dispersed in a continuous polymer matrix, wherein said dried imaging layer further comprises at least one absorber colorant, and wherein said isolated domains have a size distribution such that the coefficient of variation (cv) is less than 0.35.

Abstract: Disclosed is a multilayer film comprising a substrate bearing an aligned liquid crystal layer wherein the aligned liquid crystal layer contains an azolium salt represented by formula (I): wherein the subscripts represent the ring positions and each X is independently N or C—R; each Z is independently N, N—R, C—(R)(R), O, S, SO2, SO, C?O, C?S, or C?NR; each R group is independently hydrogen or a substituent; and Y is a charge balancing anion, which may be a separate moiety or part of an X, Z, or R; provided two or more X, Z and R groups may form a ring; provided the salt may be part of an oligomer or polymer. Such a film provides a predetermined increase in pre-tilt angle for use in liquid crystal devices.

Abstract: The invention relates to a novel class of compounds useful as chiral dopants, which compounds are available in both enantiomeric forms. Another aspect of the invention relates to such compounds having a enantiomeric excess of one enantiomeric form, which are useful in liquid crystal formulations. Such formulations are advantageous in displays and various other products.