Patents by Inventor Thomas Richard Gaffney
Thomas Richard Gaffney has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10245554Abstract: The invention relates to a gas purifier that removes moisture and oxygen from inert gases and reducing gases, for example, at sub-atmospheric pressures. The purifier can remove part per million levels of moisture in a gas stream to less than 100 parts per trillion by volume, and has a low pressure drop and a sharp breakthrough curve.Type: GrantFiled: June 5, 2017Date of Patent: April 2, 2019Assignee: Entegris, Inc.Inventors: Abneesh Srivastava, Thomas Richard Gaffney, Joshua T. Cook, Peter K. Shorgen, Daimhin Paul Murphy, Stenio da Costa Pereira
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Publication number: 20170333841Abstract: The invention relates to a gas purifier that removes moisture and oxygen from inert gases and reducing gases, for example, at sub-atmospheric pressures. The purifier can remove part per million levels of moisture in a gas stream to less than 100 parts per trillion by volume, and has a low pressure drop and a sharp breakthrough curve.Type: ApplicationFiled: June 5, 2017Publication date: November 23, 2017Inventors: Abneesh Srivastava, Thomas Richard Gaffney, Joshua T. Cook, Peter K. Shorgen, Daimhin Paul Murphy, Stenio da Costa Pereira
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Patent number: 9694319Abstract: The invention relates to a gas purifier that removes moisture and oxygen from inert gases and reducing gases, for example, at sub-atmospheric pressures. The purifier can remove part per million levels of moisture in a gas stream to less than 100 parts per trillion by volume, and has a low pressure drop and a sharp breakthrough curve.Type: GrantFiled: February 8, 2013Date of Patent: July 4, 2017Assignee: Entegris, Inc.Inventors: Abneesh Srivastava, Thomas Richard Gaffney, Joshua T. Cook, Peter K. Shogren, Daimhin Paul Murphy, Stenio da Costa Pereira
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Publication number: 20150056113Abstract: The invention relates to a gas purifier that removes moisture and oxygen from inert gases and reducing gases, for example, at sub-atmospheric pressures. The purifier can remove part per million levels of moisture in a gas stream to less than 100 parts per trillion by volume, and has a low pressure drop and a sharp breakthrough curve.Type: ApplicationFiled: February 8, 2013Publication date: February 26, 2015Applicant: Entegris, Inc.Inventors: Abneesh Srivastava, Thomas Richard Gaffney, Joshua T. Cook, Peter K. Shogren, Daimhin Paul Murphy, Stenio da Costa Pereira
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Patent number: 8828505Abstract: The present invention is a process of plasma enhanced cyclic chemical vapor deposition of silicon nitride, silicon carbonitride, silicon oxynitride, silicon carboxynitride, and carbon doped silicon oxide from alkylaminosilanes having Si—H3, preferably of the formula (R1R2N)SiH3 wherein R1 and R2 are selected independently from C2 to C10 and a nitrogen or oxygen source, preferably ammonia or oxygen has been developed to provide films with improved properties such as etching rate, hydrogen concentrations, and stress as compared to films from thermal chemical vapor deposition.Type: GrantFiled: February 27, 2012Date of Patent: September 9, 2014Assignee: Air Products and Chemicals, Inc.Inventors: Hareesh Thridandam, Manchao Xiao, Xinjian Lei, Thomas Richard Gaffney, Eugene Joseph Karwacki, Jr.
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Patent number: 8377341Abstract: Tellurium (Te)-containing precursors, Te containing chalcogenide phase change materials are disclosed in the specification. A method of making Te containing chalcogenide phase change materials using ALD, CVD or cyclic CVD process is also disclosed in the specification in which at least one of the disclosed tellurium (Te)-containing precursors is introduced to the process.Type: GrantFiled: April 10, 2008Date of Patent: February 19, 2013Assignee: Air Products and Chemicals, Inc.Inventors: Manchao Xiao, Thomas Richard Gaffney
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Publication number: 20120171874Abstract: The present invention is a process of plasma enhanced cyclic chemical vapor deposition of silicon nitride, silicon carbonitride, silicon oxynitride, silicon carboxynitride, and carbon doped silicon oxide from alkylaminosilanes having Si—H3, preferably of the formula (R1R2N)SiH3 wherein R1 and R2 are selected independently from C2 to C10 and a nitrogen or oxygen source, preferably ammonia or oxygen has been developed to provide films with improved properties such as etching rate, hydrogen concentrations, and stress as compared to films from thermal chemical vapor deposition.Type: ApplicationFiled: February 27, 2012Publication date: July 5, 2012Applicant: Air Products and Chemicals, Inc.Inventors: Hareesh Thridandam, Manchao Xiao, Xinjian Lei, Thomas Richard Gaffney, Eugene Joseph Karwacki, JR.
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Patent number: 8129555Abstract: Aminosilane precursors for depositing silicon-containing films, and methods for depositing silicon-containing films from these aminosilane precursors, are described herein. In one embodiment, there is provided an aminosilane precursor for depositing silicon-containing film comprising the following formula (I): (R1R2N)nSiR34-n??(I) wherein substituents R1 and R2 are each independently chosen from an alkyl group comprising from 1 to 20 carbon atoms and an aryl group comprising from 6 to 30 carbon atoms, at least one of substituents R1 and R2 comprises at least one electron withdrawing substituent chosen from F, Cl, Br, I, CN, NO2, PO(OR)2, OR, SO, SO2, SO2R and wherein R in the at least one electron withdrawing substituent is chosen from an alkyl group or an aryl group, R3 is chosen from H, an alkyl group, or an aryl group, and n is a number ranging from 1 to 4.Type: GrantFiled: August 12, 2008Date of Patent: March 6, 2012Assignee: Air Products and Chemicals, Inc.Inventors: Hansong Cheng, Manchao Xiao, Gauri Sankar Lal, Thomas Richard Gaffney, Chenggang Zhou, Jinping Wu
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Patent number: 7960205Abstract: The present invention is a process of making a germanium-antimony-tellurium alloy film using a process selected from the group consisting of atomic layer deposition and chemical vapor deposition, wherein a silyltellurium precursor is used as a source of tellurium for the alloy film and is reacted with an alcohol during the deposition process.Type: GrantFiled: November 18, 2008Date of Patent: June 14, 2011Assignee: Air Products and Chemicals, Inc.Inventors: Manchao Xiao, Liu Yang, Thomas Richard Gaffney
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Patent number: 7875312Abstract: The present invention is directed to a method for depositing a silicon oxide layer on a substrate by CVD. The reaction of an organoaminosilane precursor where the alkyl group has at least two carbon atoms in the presence of an oxidizing agent allows for the formation of a silicon oxide film. The organoaminosilanes are represented by the formulas: The use of diisopropylaminosilane is the preferred precursor for the formation of the silicon oxide film.Type: GrantFiled: May 23, 2006Date of Patent: January 25, 2011Assignee: Air Products and Chemicals, Inc.Inventors: Hareesh Thridandam, Manchao Xiao, Xinjian Lei, Thomas Richard Gaffney
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Patent number: 7678422Abstract: A process to deposit metal silicon nitride on a substrate comprising: sorbing a metal amide on a heated substrate, purging away the unsorbed metal amide, contacting a silicon-containing source having one or more Si—H3 fragments with the heated substrate to react with the sorbed metal amide, wherein the silicon-containing source has one or more H3Si—NR02 (R0?SiH3, R, R1 or R2, defined below) groups selected from the group consisting of one or more of: wherein R and R1 in the formulas represent aliphatic groups typically having from 2 to about 10 carbon atoms, e.g., branched alkyl, cycloalkyl with R and R1 in formula A also being combinable into a cyclic group, and R2 representing a single bond, (CH2)n, a ring, or SiH2, and purging away the unreacted silicon-containing source.Type: GrantFiled: December 4, 2007Date of Patent: March 16, 2010Assignee: Air Products and Chemicals, Inc.Inventors: Xinjian Lei, Hareesh Thridandam, Manchao Xiao, Heather Regina Bowen, Thomas Richard Gaffney
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Publication number: 20100041243Abstract: Aminosilane precursors for depositing silicon-containing films, and methods for depositing silicon-containing films from these aminosilane precursors, are described herein. In one embodiment, there is provided an aminosilane precursor for depositing silicon-containing film comprising the following formula (I): (R1R2N)nSiR34-n ??(I) wherein substituents R1 and R2 are each independently chosen from an alkyl group comprising from 1 to 20 carbon atoms and an aryl group comprising from 6 to 30 carbon atoms, at least one of substituents R1 and R2 comprises at least one electron withdrawing substituent chosen from F, Cl, Br, I, CN, NO2, PO(OR)2, OR, SO, SO2, SO2R and wherein R in the at least one electron withdrawing substituent is chosen from an alkyl group or an aryl group, R3 is chosen from H, an alkyl group, or an aryl group, and n is a number ranging from 1 to 4.Type: ApplicationFiled: August 12, 2008Publication date: February 18, 2010Applicant: AIR PRODUCTS AND CHEMICALS, INC.Inventors: Hansong Cheng, Manchao Xiao, Gauri Sankar Lal, Thomas Richard Gaffney, Chenggang Zhou, Jinping Wu
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Publication number: 20090142881Abstract: Tellurium (Te)-containing precursors, Te containing chalcogenide phase change materials are disclosed in the specification. A method of making Te containing chalcogenide phase change materials using ALD, CVD or cyclic CVD process is also disclosed in the specification in which at least one of the disclosed tellurium (Te)-containing precursors is introduced to the process.Type: ApplicationFiled: April 10, 2008Publication date: June 4, 2009Applicant: AIR PRODUCTS AND CHEMICALS, INC.Inventors: Manchao Xiao, Thomas Richard Gaffney
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Publication number: 20090137100Abstract: The present invention is a process of making a germanium-antimony-tellurium alloy film using a process selected from the group consisting of atomic layer deposition and chemical vapor deposition, wherein a silyltellurium precursor is used as a source of tellurium for the alloy film and is reacted with an alcohol during the deposition process.Type: ApplicationFiled: November 18, 2008Publication date: May 28, 2009Applicant: AIR PRODUCTS AND CHEMICALS, INC.Inventors: Manchao Xiao, Liu Yang, Thomas Richard Gaffney
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Publication number: 20080207007Abstract: The present invention is a process of plasma enhanced cyclic chemical vapor deposition of silicon nitride, silicon carbonitride, silicon oxynitride, silicon carboxynitride, and carbon doped silicon oxide from alkylaminosilanes having Si—H3, preferably of the formula (R1R2N)SiH3 wherein R1 and R2 are selected independently from C2 to C10 and a nitrogen or oxygen source, preferably ammonia or oxygen has been developed to provide films with improved properties such as etching rate, hydrogen concentrations, and stess as compared to films from thermal chemical vapor deposition.Type: ApplicationFiled: February 12, 2008Publication date: August 28, 2008Applicant: AIR PRODUCTS AND CHEMICALS, INC.Inventors: Hareesh Thridandam, Manchao Xiao, Xinjian Lei, Thomas Richard Gaffney, Eugene Joseph Karwacki
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Publication number: 20080145535Abstract: A process to deposit metal silicon nitride on a substrate comprising: sorbing a metal amide on a heated substrate, purging away the unsorbed metal amide, contacting a silicon-containing source having one or more Si—H3 fragments with the heated substrate to react with the sorbed metal amide, wherein the silicon-containing source has one or more H3Si—NR02(R0?SiH3, R, R1 or R2, defined below) groups selected from the group consisting of one or more of: wherein R and R1 in the formulas represent aliphatic groups typically having from 2 to about 10 carbon atoms, e.g., branched alkyl, cycloalkyl with R and R1 in formula A also being combinable into a cyclic group, and R2 representing a single bond, (CH2)n, a ring, or SiH2, and purging away the unreacted silicon-containing source.Type: ApplicationFiled: December 4, 2007Publication date: June 19, 2008Applicant: AIR PRODUCTS AND CHEMICALS, INC.Inventors: Xinjian Lei, Hareesh Thridandam, Manchao Xiao, Heather Regina Bowen, Thomas Richard Gaffney
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Patent number: 7303607Abstract: This invention relates to an improvement in a low-pressure storage and delivery system for gases having Lewis basicity, particularly hazardous specialty gases such as phosphine and arsine, which are utilized in the electronics industry. The improvement resides in storing the gases in a liquid incorporating a reactive compound having Lewis acidity capable of effecting a reversible reaction between a gas having Lewis basicity. The reactive compound comprises a reactive species that is dissolved, suspended, dispersed, or otherwise mixed with a nonvolatile liquid.Type: GrantFiled: June 14, 2004Date of Patent: December 4, 2007Assignee: Air Products and Chemicals, Inc.Inventors: Daniel Joseph Tempel, Philip Bruce Henderson, Jeffrey Richard Brzozowski, Ronald Martin Pearlstein, Thomas Richard Gaffney
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Publication number: 20070275166Abstract: The present invention is directed to a method for depositing a silicon oxide layer on a substrate by CVD. The reaction of an organoaminosilane precursor where the alkyl group has at least two carbon atoms in the presence of an oxidizing agent allows for the formation of a silicon oxide film. The organoaminosilanes are represented by the formulas: The use of diisopropylaminosilane is the preferred precursor for the formation of the silicon oxide film.Type: ApplicationFiled: May 23, 2006Publication date: November 29, 2007Inventors: Hareesh Thridandam, Manchao Xiao, Xinjian Lei, Thomas Richard Gaffney
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Patent number: 7300995Abstract: The present invention is; (a) a process for stabilizing a cyclotetrasiloxane, such as 1,3,5,7-tetramethylcyclotetrasiloxane, against polymerization used in a chemical vapor deposition process for silicon oxides in electronic material fabrication comprising providing an effective amount of a free radical scavenger polymerization inhibitor to such cyclotetrasiloxane; and (b) a composition of a cyclotetrasiloxane, such as 1,3,5,7-tetramethylcyclotetrasiloxane, stabilized against polymerization used in a chemical vapor deposition process as a precursor for silicon oxides in electronic material fabrication, comprising; such cyclotetrasiloxane and a free radical scavenger polymerization inhibitor.Type: GrantFiled: July 11, 2006Date of Patent: November 27, 2007Assignee: Air Products and Chemicals, Inc.Inventors: Steven Gerard Mayorga, Manchao Xiao, Thomas Richard Gaffney, Robert George Syvret
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Patent number: 7101948Abstract: The present invention is; (a) a process for stabilizing a cyclotetrasiloxane, such as 1,3,5,7-tetramethylcyclotetrasiloxane, against polymerization used in a chemical vapor deposition process for silicon oxides in electronic material fabrication comprising providing an effective amount of a free radical scavenger polymerization inhibitor to such cyclotetrasiloxane; and (b) a composition of a cyclotetrasiloxane, such as 1,3,5,7-tetramethylcyclotetrasiloxane, stabilized against polymerization used in a chemical vapor deposition process as a precursor for silicon oxides in electronic material fabrication, comprising; such cyclotetrasiloxane and a free radical scavenger polymerization inhibitor.Type: GrantFiled: June 23, 2003Date of Patent: September 5, 2006Assignee: Air Products and Chemicals, Inc.Inventors: Steven Gerard Mayorga, Manchao Xiao, Thomas Richard Gaffney, Robert George Syvret