Patents by Inventor Thomas S. McCauley

Thomas S. McCauley has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High growth rate homoepitaxial diamond film deposition at high temperatures by microwave plasma-assisted chemical vapor deposition
    Patent number: 5628824
    Abstract: The deposition of high quality diamond films at high linear growth rates and substrate temperatures for microwave-plasma chemical vapor deposition is disclosed. The linear growth rate achieved for this process is generally greater than 50 .mu.m/hr for high quality films, as compared to rates of less than 5 .mu.m/hr generally reported for MPCVD processes.
    Type: Grant
    Filed: March 16, 1995
    Date of Patent: May 13, 1997
    Assignee: The University of Alabama at Birmingham Research Foundation
    Inventors: Yogesh K. Vohra, Thomas S. McCauley