Abstract: In the field of wireless communication systems or networks, the design of resource pools as they may be used in sidelink communications among users of the wireless communication system, for example in V2X applications, is described. In particular, an improved resource pool design, for example for resource pools to be used in sidelink communications in V2X services in view of the advantages defined by the NR 5G standard, is presented.

Abstract: A flash memory for a host system has a multiplicity of memory blocks. The memory blocks are subdivided into memory pages which can be written to and each memory page are also subdivided into partial pages and each partial page having a physical partial page address which is assigned a logical partial page address which can be addressed. The physical partial page addresses assigned to the logical partial page addresses are able to be determined using hierarchically organized structures of address tables for converting logical partial page addresses into physical partial page addresses. The multiplicity of memory blocks of the flash memory are divided into areas which comprise at least one static area of memory blocks which have been written to, a write area to which new and changed useful data are written, a block management area which stores management data for the memory blocks, and a logbook area.

Abstract: A method for contacting and connecting solar cells, according to which at least one electrode is formed by at least one wire conductor, and including the following steps: positioning a continuous wire conductor so that the continuous wire conductor extends across a plurality of solar cells, interrupting the electrodes at the positions required for the connection, and contacting the solar cells and electrodes.

Abstract: A flash memory for a host system has a multiplicity of memory blocks. The memory blocks are subdivided into memory pages which can be written to and each memory page are also subdivided into partial pages and each partial page having a physical partial page address which is assigned a logical partial page address which can be addressed. The physical partial page addresses assigned to the logical partial page addresses are able to be determined using hierarchically organized structures of address tables for converting logical partial page addresses into physical partial page addresses. The multiplicity of memory blocks of the flash memory are divided into areas which comprise at least one static area of memory blocks which have been written to, a write area to which new and changed useful data are written, a block management area which stores management data for the memory blocks, and a logbook area.

Abstract: A reaction chamber apparatus includes a vertically movable heater-susceptor with an attached annular attached flow ring that performs as a gas conduit. The outlet port of the flow ring extends below the bottom of a wafer transport slot valve when the susceptor is in its process (higher) position, while the gas conduit formed by the flow ring has an external surface at its edge that isolates the outer space of the reactor above the wafer from the confined reaction space. In some cases, the outer edge of the gas conduit is in proximity to a ring attached to the reactor lid and, together, the ring and conduit act as a tongue-in-groove (TIG) configuration. In some cases, the TIG design may have a staircase contour, thereby limiting diffusion-backflow of downstream gases to the outer space of the reactor.

Abstract: A multi-stage precursor vessel system for an atomic layer deposition (ALD) system in which a precursor is transferred from a first, low temperature reservoir chamber into a second (or subsequent) chamber at higher temperature, which second (or subsequent) chamber is used to create a highest possible vapor pressure of the precursor allowed by its temperature without decomposition in the timeframe of its residence therein.

Abstract: A wafer processing apparatus includes one or more processing modules, each having multiple, distinct, single-wafer processing reactors configured for semi-independent ALD and/or CVD film deposition therein; a robotic central wafer handler configured to provide wafers to and accept wafers from each of said wafer processing modules; and a single-wafer loading and unloading mechanism that includes a loading and unloading port and a mini-environment coupling the loading and unloading port to the robotic central wafer handler. The wafer processing reactors may be arranged (i) along axes of a Cartesian coordinate system, or (ii) in quadrants defined by said axes, one axis being parallel to a wafer input plane of the at least one of the process modules to which the single-wafer processing reactors belong. Each processing module can include up to four single-wafer processing reactors, each with an independent gas distribution module.

Abstract: A method and apparatus for the use of individual vertically stacked ALD or CVD reactors. Individual reactors are independently operable and maintainable. The gas inlet and output are vertically configured with respect to the reactor chamber for generally axi-symmetric process control. The chamber design is modular in which cover and base plates forming the reactor have improved flow design.

Abstract: A method and apparatus for the use of individual vertically stacked ALD or CVD reactors. Individual reactors are independently operable and maintainable. The gas inlet and output are vertically configured with respect to the reactor chamber for generally axi-symmetric process control. The chamber design is modular in which cover and base plates forming the reactor have improved flow design.

Abstract: Different periods of an ALD cycle are performed using different purge flows and, in some cases, different pumping capacities, while maintaining the reactor chamber at a nominally constant pressure. The purge flows may, in some cases, utilize different gasses and/or may be provided through different flow paths. These operations provide for ALD cycle time improvements and economical operation with respect to consumables usage. In some embodiments the use of an annular throttle valve provides a means for controlling downstream flow limiting conductances in a gas flow path from the reactor chamber.

Abstract: An ALD system includes an ALD reactor and a precursor trap coupled downstream of the ALD reactor via a valve assembly. The precursor trap is configured to collect unused chemical precursors after reactions in the ALD reactor.

Abstract: A process for the production of a face-to-face carpet fabric on a double pile loom having at least two filling insertion planes, uses filling yarns, stuffer warp yarns, and chain warp yarns to form two back cloths. The filling yarns are inserted into each back cloth as back fillings and inner fillings. Groups of chain warp yarns, individual yarns of which between their respective last binding to an inner filling and the succeeding last binding to a back filling form a holding length, are assigned to each back cloth. All patterning pile loops are stretched over back fillings. and the pattern repeat of a group of chain warp yarns is selected to be greater than six. The holding lengths of a chain warp yarn extend over at least three filling insertion cycles.

Abstract: The invention relates to a process for the production of a face-to-face carpet fabric on a double pile loom having at least two filling insertion planes, using filling yarns (SR, SI), stuffer warp yarns (FK), and chain warp yarns (B) to form the two back cloths (OW, UW), whereby the filling yarns (SR, SI) are inserted into each back cloth as back fillings (SR) and inner fillings (SI) and whereby groups of chain warp yarns (B) whose individual yarns between their respective last binding to an inner filling (SI) and the succeeding last binding to a back filling (SR) form a holding length (Y), are assigned to each back cloth. With the object of achieving an always vertical tie-in of the pile loops in the back cloth, a high pile density, and a saving of chain warp yarns, all patterning pile loops (PM) are stretched over back fillings (SR) and the pattern repeat (R) of a group of chain warp yarns (B) is selected to be greater than six.