Patents by Inventor Thomas T. Hwang

Thomas T. Hwang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Nitrided ultra thin gate dielectrics
    Patent number: 7109559
    Abstract: A method for forming a gate dielectric for an integrated circuit device. In an exemplary embodiment of the invention, the method includes forming an initial oxynitride layer upon a substrate material, the oxynitride layer having an initial physical thickness. The initial oxynitride layer is then subjected to a plasma nitridation, the plasma nitridation resulting in final oxynitride layer having a final physical thickness.
    Type: Grant
    Filed: November 5, 2004
    Date of Patent: September 19, 2006
    Assignee: International Business Machines Corporation
    Inventors: Mukesh V. Khare, Christopher P. D'Emic, Thomas T. Hwang, Paul C. Jamison, James J. Quinlivan, Beth A. Ward
  • Method for improved plasma nitridation of ultra thin gate dielectrics
    Patent number: 6893979
    Abstract: A method for forming a gate dielectric for an integrated circuit device. In an exemplary embodiment of the invention, the method includes forming an initial oxynitride layer upon a substrate material, the oxynitride layer having an initial physical thickness. The initial oxynitride layer is then subjected to a plasma nitridation, the plasma nitridation resulting in final oxynitride layer having a final physical thickness.
    Type: Grant
    Filed: March 15, 2001
    Date of Patent: May 17, 2005
    Assignee: International Business Machines Corporation
    Inventors: Mukesh V. Khare, Christopher P. D'Emic, Thomas T. Hwang, Paul C. Jamison, James J. Quinlivan, Beth A. Ward
  • Use of disposable spacer to introduce gettering in SOI layer
    Patent number: 6635517
    Abstract: A method of forming a self-aligned gettering region within an SOI substrate is provided. Specifically, the inventive method includes the steps of forming a disposable spacer on each vertical sidewall of a patterned gate stack region, the patterned gate stack region being formed on a top Si-containing layer of an SOI substrate; implanting gettering species into the top Si-containing layer not protected by the disposable spacer and patterned gate stack region; and removing the disposable spacer and annealing the implanted gettering species so as to convert said species into a gettering region.
    Type: Grant
    Filed: August 7, 2001
    Date of Patent: October 21, 2003
    Assignee: International Business Machines Corporation
    Inventors: Tze-Chiang Chen, Thomas T. Hwang, Mukesh V. Khare, Effendi Leobandung, Anda C. Mocuta, Paul A. Ronsheim, Ghavam G. Shahidi
  • Use of disposable spacer to introduce gettering in SOI layer
    Publication number: 20030032251
    Abstract: A method of forming a self-aligned gettering region within an SOI substrate is provided. Specifically, the inventive method includes the steps of forming a disposable spacer on each vertical sidewall of a patterned gate stack region, the patterned gate stack region being formed on a top Si-containing layer of an SOI substrate; implanting gettering species into the top Si-containing layer not protected by the disposable spacer and patterned gate stack region; and removing the disposable spacer and annealing the implanted gettering species so as to convert said species into a gettering region.
    Type: Application
    Filed: August 7, 2001
    Publication date: February 13, 2003
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Tze-Chiang Chen, Thomas T. Hwang, Mukesh V. Khare, Effendi Leobandung, Anda C. Mocuta, Paul A. Ronsheim, Ghavam G. Shahidi
  • Method for improved plasma nitridation of ultra thin gate dielectrics
    Publication number: 20020130377
    Abstract: A method for forming a gate dielectric for an integrated circuit device. In an exemplary embodiment of the invention, the method includes forming an initial oxynitride layer upon a substrate material, the oxynitride layer having an initial physical thickness. The initial oxynitride layer is then subjected to a plasma nitridation, the plasma nitridation resulting in final oxynitride layer having a final physical thickness.
    Type: Application
    Filed: March 15, 2001
    Publication date: September 19, 2002
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Mukesh V. Khare, Christopher P. D'Emic, Thomas T. Hwang, Paul C. Jamison, J. J. Quinlivan, Beth A. Ward