Abstract: The present invention relates to a contact arrangement (47, 48, 49, 50, 55, 56, 57) for substrate contacting, in particular for contacting terminal faces of a semiconductor substrate (21), comprising at least one inner contact (25) of the contact arrangement that is formed on a substrate surface by a base terminal face of the substrate, a passivation layer (34, 35) covering at least the outer edge region and the periphery of the inner contact, at least one lower contact strip (36) extending laterally away from the inner contact (25) on the passivation layer (34, 35), and a further, upper contact strip (37, 38, 39) extending on the lower contact strip, wherein the further contact strip is formed by a contact metallization, which is substantially composed of a nickel (Ni) layer or a layer structure (38, 39) containing nickel and palladium (Pd).