Patents by Inventor Thuc Dinh

Thuc Dinh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11695564
    Abstract: Embodiments of the inventive concept provide a system and method that verifies a user through a security token combined with biometric information processing techniques capable of changing and canceling the conventional encryption key without storing biometric information-related data corresponding to a user's personal information.
    Type: Grant
    Filed: December 28, 2020
    Date of Patent: July 4, 2023
    Assignee: INDUSTRY FOUNDATION OF CHONNAM NATIONAL UNIVERSITY
    Inventors: Deok Jai Choi, Thao Mai Dang, Thuc Dinh Nguyen
  • Publication number: 20220158838
    Abstract: Embodiments of the inventive concept provide a system and method that verifies a user through a security token combined with biometric information processing techniques capable of changing and canceling the conventional encryption key without storing biometric information-related data corresponding to a user's personal information.
    Type: Application
    Filed: December 28, 2020
    Publication date: May 19, 2022
    Applicant: INDUSTRY FOUNDATION OF CHONNAM NATIONAL UNIVERSITY
    Inventors: Deok Jai CHOI, Thao Mai DANG, Thuc Dinh NGUYEN
  • Publication number: 20140096715
    Abstract: An apparatus removes particles from a gas/vapor mixture while at the same time improves the uniformity of gas/vapor mixture to create a more uniformly-mixed mixture stream for thin film deposition and semiconductor device fabrication.
    Type: Application
    Filed: December 16, 2013
    Publication date: April 10, 2014
    Applicant: MSP Corporation
    Inventors: Benjamin Y.H. Liu, Yamin Ma, Thuc Dinh
  • Publication number: 20130312674
    Abstract: An apparatus and method for generating vapor from a liquid precursor for a thin film deposition on a substrate includes an inlet section in fluid communication with a downstream vaporization chamber section. The inlet section comprises a gas inlet for receiving gas from a gas source through a gas flow sensor and a gas flow control valve and a liquid inlet for receiving liquid from a liquid source through a liquid flow sensor and a liquid flow control valve. An electronic controller controls the gas and liquid flow control valves thereby controlling the rates of gas and liquid flow into the inlet section to generate vapor in the downstream vaporization chamber section for thin film deposition on the substrate.
    Type: Application
    Filed: August 6, 2013
    Publication date: November 28, 2013
    Applicant: MSP Corporation
    Inventors: Benjamin Y.H. Liu, Yamin Ma, Thuc Dinh
  • Patent number: 8554064
    Abstract: The present disclosure relates to an apparatus and a method for vaporizing a liquid to form vapor preferably in a gas stream. The apparatus includes a composite metal structure, the structure comprising a plurality of passageways for providing heat to vaporize the liquid in the gas stream to form a gas/vapor mixture. A non-corrosive interface lies between the metal structure and the gas/vapor mixture, the interface being chemically inert to the gas/vapor mixture and the structure permitting heat to be conducted rapidly therethrough to vaporize the liquid. The apparatus further includes an inlet for the gas and an inlet for the liquid to be vaporized to flow into the plurality of passageways and an exit through which the gas/vapor mixture exits the apparatus.
    Type: Grant
    Filed: December 21, 2011
    Date of Patent: October 8, 2013
    Assignee: MSP Corporation
    Inventors: Thuc Dinh, Yamin Ma, Benjamin Y. H. Liu
  • Patent number: 8297223
    Abstract: This disclosure pertains to a method and apparatus to permit changing a filter on the input line to a vacuum deposition chamber without breaking or reducing the vacuum for the deposition chamber and other components in the deposition system. Isolation valves are provided at the inlet and outlet of the filter so the filter can be isolated from the source of vacuum and the deposition chamber for removal and replacement of the filter.
    Type: Grant
    Filed: September 22, 2008
    Date of Patent: October 30, 2012
    Assignee: MSP Corporation
    Inventors: Benjamin Liu, Yamin Ma, Thuc Dinh
  • Publication number: 20110232588
    Abstract: An apparatus and method for generating vapor from a liquid precursor for a thin film deposition on a substrate includes an inlet section in fluid communication with a downstream vaporization chamber section. The inlet section comprises a gas inlet for receiving gas from a gas source through a gas flow sensor and a gas flow control valve and a liquid inlet for receiving liquid from a liquid source through a liquid flow sensor and a liquid flow control valve. An electronic controller controls the gas and liquid flow control valves thereby controlling the rates of gas and liquid flow into the inlet section to generate vapor in the downstream vaporization chamber section for thin film deposition on the substrate.
    Type: Application
    Filed: March 24, 2011
    Publication date: September 29, 2011
    Applicant: MSP Corporation
    Inventors: Benjamin Y.H. Liu, Yamin Ma, Thuc Dinh
  • Publication number: 20090293807
    Abstract: An apparatus removes particles from a gas/vapor mixture while at the same time improves the uniformity of gas/vapor mixture to create a more uniformly-mixed mixture stream for thin film deposition and semiconductor device fabrication.
    Type: Application
    Filed: May 26, 2009
    Publication date: December 3, 2009
    Applicant: MSP Corporation
    Inventors: Benjamin Y.H. Liu, Yamin Ma, Thuc Dinh