Patents by Inventor TianChen Dong

TianChen Dong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Vertical transistors with sidewall gate air gaps and methods therefor
    Patent number: 10355129
    Abstract: A method is provided that includes forming a first vertically-oriented transistor above a substrate, the first vertically-oriented transistor comprising a first sidewall gate disposed in a first direction, forming a second vertically-oriented transistor above the substrate, the second vertically-oriented transistor including a second sidewall gate disposed in the first direction, and forming an air gap chamber above the substrate disposed between the first sidewall gate and the second sidewall gate, and extending in the first direction, the air gap chamber including an air gap.
    Type: Grant
    Filed: June 22, 2018
    Date of Patent: July 16, 2019
    Assignee: SanDisk Technologies LLC
    Inventors: Chao Feng Yeh, TianChen Dong
  • Vertical transistors with sidewall gate air gaps and methods therefor
    Patent number: 10115820
    Abstract: A method is provided that includes forming a first vertically-oriented transistor above a substrate, the first vertically-oriented transistor comprising a first sidewall gate disposed in a first direction, forming a second vertically-oriented transistor above the substrate, the second vertically-oriented transistor including a second sidewall gate disposed in the first direction, and forming an air gap chamber above the substrate disposed between the first sidewall gate and the second sidewall gate, and extending in the first direction, the air gap chamber including an air gap.
    Type: Grant
    Filed: December 6, 2016
    Date of Patent: October 30, 2018
    Assignee: SanDisk Technologies LLC
    Inventors: Chao Feng Yeh, TianChen Dong
  • VERTICAL TRANSISTORS WITH SIDEWALL GATE AIR GAPS AND METHODS THEREFOR
    Publication number: 20180301556
    Abstract: A method is provided that includes forming a first vertically-oriented transistor above a substrate, the first vertically-oriented transistor comprising a first sidewall gate disposed in a first direction, forming a second vertically-oriented transistor above the substrate, the second vertically-oriented transistor including a second sidewall gate disposed in the first direction, and forming an air gap chamber above the substrate disposed between the first sidewall gate and the second sidewall gate, and extending in the first direction, the air gap chamber including an air gap.
    Type: Application
    Filed: June 22, 2018
    Publication date: October 18, 2018
    Applicant: SANDISK TECHNOLOGIES LLC
    Inventors: Chao Feng Yeh, TianChen Dong
  • VERTICAL TRANSISTORS WITH SIDEWALL GATE AIR GAPS AND METHODS THEREFOR
    Publication number: 20180158947
    Abstract: A method is provided that includes forming a first vertically-oriented transistor above a substrate, the first vertically-oriented transistor comprising a first sidewall gate disposed in a first direction, forming a second vertically-oriented transistor above the substrate, the second vertically-oriented transistor including a second sidewall gate disposed in the first direction, and forming an air gap chamber above the substrate disposed between the first sidewall gate and the second sidewall gate, and extending in the first direction, the air gap chamber including an air gap.
    Type: Application
    Filed: December 6, 2016
    Publication date: June 7, 2018
    Applicant: SANDISK TECHNOLOGIES LLC
    Inventors: Chao Feng Yeh, TianChen Dong