Abstract: Semiconductor devices and methods for forming a semiconductor device are presented. The method includes providing a substrate having a device component with a contact region. A contact dielectric layer is formed on the substrate, covering the substrate and device component. The contact dielectric layer includes a lower contact dielectric layer, an intermediate contact dielectric etch stop layer formed on the lower contact dielectric layer, and an upper contact dielectric layer formed on the intermediate contact dielectric etch stop layer. A contact opening is formed through the contact dielectric layer. The contact opening has an upper contact sidewall profile in the upper contact dielectric layer and a lower tapered contact sidewall profile in the lower contact dielectric layer. The tapered sidewall profile prevents shorting with the device component.

Abstract: Integrated circuits with dummy contacts and methods for fabricating such integrated circuits are provided. The method includes forming an interlayer dielectric overlying an electronic component and a substrate, wherein the interlayer dielectric has an interlayer dielectric top surface. An active contact is formed through the interlayer dielectric and forms an electrical connection with the electronic component. A dummy contact is formed within the interlayer dielectric where the dummy contact extends to a dummy contact termination point between the interlayer dielectric top surface and the substrate such that an insulator is positioned between the dummy contact termination point and the electronic component.

Abstract: Semiconductor devices and methods for forming a semiconductor device are presented. The method includes providing a substrate having a device component with a contact region. A contact dielectric layer is formed on the substrate, covering the substrate and device component. The contact dielectric layer includes a lower contact dielectric layer, an intermediate contact dielectric etch stop layer formed on the lower contact dielectric layer, and an upper contact dielectric layer formed on the intermediate contact dielectric etch stop layer. A contact opening is formed through the contact dielectric layer. The contact opening has an upper contact sidewall profile in the upper contact dielectric layer and a lower tapered contact sidewall profile in the lower contact dielectric layer. The tapered sidewall profile prevents shorting with the device component.