Patents by Inventor Tian Xiao
Tian Xiao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11954912Abstract: A method for cutting or extracting video clips from a video, including the audio content relevant to points of particular interest, and combining the same for instruction or training on particular points; a computing device applying the method extracts text information from the spoken audio content of a video to be cut and obtains multiple paragraph segmentation positions as candidates for inclusion in a desired and finished presentation by analyzing the information from text representing the spoken audio content, the analysis being carried out by a semantic segmentation model. Candidate items of text are obtained by isolating pieces of text according to the paragraph segmentation positions. Time stamps of the candidate text segments are acquired, and candidate video clips are obtained by cutting the video according to the acquired time stamps.Type: GrantFiled: April 23, 2021Date of Patent: April 9, 2024Assignee: Ping An Technology (Shenzhen) Co., Ltd.Inventors: Xinyi Wu, Yiwei Wang, Tian Xia, Peng Chang, Mei Han, Jing Xiao
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Publication number: 20240038853Abstract: The MOS device with resistive field plate for realizing conductance modulation field effect in the present invention is based on the existing trench gate MOS device, and a semi-insulating resistive field plate electrically connected to the trench gate structure and the drain structure is added in the drift region, where the trench gate structure can control the on-off of the MOS channel, and the semi-insulating resistive field plate can adjust the doping concentration of the drift region to modulate the conductance of the on-state drift region and the distribution of off-state high-voltage blocking electric field, thus a lower on-resistance can be obtained. In addition, the modern 2.5-dimensional processing technology based on deep trench etching is adopted in the present invention, which is conducive to the miniaturization design and high density design of the structure and is more suitable for the More than Moore (beyond Moore) development of modern integrated semiconductor devices.Type: ApplicationFiled: April 26, 2021Publication date: February 1, 2024Applicant: NO.24 RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATIONInventors: Kaizhou TAN, Tian XIAO, Jiahao ZHANG, Yonghui YANG, Xiaoquan LI, Pengfei WANG, Ying PEI, Guangbo LI, Hequan JIANG, Peijian ZHANG, Sheng QIU, Liang CHEN, Wei CUI
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Publication number: 20240029468Abstract: A multi-segment pixel matrix, a sensor or device, a system, and a method, for biometric sensing, are provided. Such a device or system includes a sensor comprising a pixel matrix having two or more pixel arrays as separate segments logically divided in the pixel matrix. The pixel matrix may include both thermal sensing pixels and capacitive sensing nodes. The device or system may include a plurality of application-specific intergrade circuits (ASICs) coupled to the sensor. Each ASIC is configured to capture image data of a biometric pattern measured by at least one pixel array. Each pixel array is independently driven and scanned by one or more of the plurality of the ASICs. The device or system further includes a microcontroller unit coupled to the plurality of ASICs and are used to process the image data and/or control operation of the system. Such a sensor can be a fingerprint sensor.Type: ApplicationFiled: October 2, 2023Publication date: January 25, 2024Applicant: Next Biometrics Group ASAInventors: King Hong Kwan, Tian Xiao, Ryan John Higgins
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Publication number: 20230411464Abstract: A shared-dielectric MOSFET device with a resistive-field-plate and a preparation method are provided. In the shared-dielectric MOSFET device, the semi-insulating resistive-field-plate electrically connected to the trench gate structure and the drain structure is introduced in the drift region of the existing trench gate MOS devices, and when the trench gate structure controls the MOS channel to be turned on or turned off, the semi-insulating resistive-field-plate can adjust the doping concentration of the drift region, to modulate the conductance of the on-state drift region and the distribution of a off-state high-voltage blocking electric field, thereby obtaining a lower on-resistance. Meanwhile, in the preparation method of the present disclosure, the modern 2.Type: ApplicationFiled: November 1, 2021Publication date: December 21, 2023Applicant: NO.24 RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATIONInventors: Kaizhou TAN, Tian XIAO, Jiahao ZHANG, Xiaoquan LI, Pengfei WANG, Ying PEI, Guangbo LI, Yonghui YANG, Hequan JIANG, Peijian ZHANG, Sheng QIU, Liang CHEN, Wei CUI
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Patent number: 11790684Abstract: A multi-segment pixel matrix, a sensor or device, a system, and a method, for biometric sensing, are provided. Such a device or system includes a sensor comprising a pixel matrix having two or more pixel arrays as separate segments logically divided in the pixel matrix. The pixel matrix may include both thermal sensing pixels and capacitive sensing nodes. The device or system may include a plurality of application-specific intergrade circuits (ASICs) coupled to the sensor. Each ASIC is configured to capture image data of a biometric pattern measured by at least one pixel array. Each pixel array is independently driven and scanned by one or more of the plurality of the ASICs. The device or system further includes a microcontroller unit coupled to the plurality of ASICs and are used to process the image data and/or control operation of the system. Such a sensor can be a fingerprint sensor.Type: GrantFiled: January 4, 2022Date of Patent: October 17, 2023Assignee: NEXT Biometrics Group ASAInventors: King Hong Kwan, Tian Xiao, Ryan John Higgins
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Patent number: 11688640Abstract: Systems and methods for manufacturing flexible electronics are described herein. Methods in accordance with embodiments of the present technology can include disposing electrical features, such as thin film circuits, on a first side of a glass substrate, applying a first protective material over the electronic features, and exposing a second side of the glass substrate to a chemical etching tank to thin the glass substrate to a predetermined thickness. The thinning process can remove cracks and other defects from the second side of the glass substrate and enhance the flexibility of the electronic assembly. A second protective material can be disposed on the second side of the thinned glass substrate to maintain the enhanced backside surface of the glass substrate. In some embodiments, the method also includes singulating the plurality of electronic features into individual electronic components by submerging the electronic assembly into a chemical etching tank.Type: GrantFiled: January 19, 2022Date of Patent: June 27, 2023Assignee: NEXT Biometrics Group ASAInventors: Tian Xiao, King Hong Kwan, Sheng-Hsiang Hung, Mark W. Naumann
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Publication number: 20220222964Abstract: A multi-segment pixel matrix, a sensor or device, a system, and a method, for biometric sensing, are provided. Such a device or system includes a sensor comprising a pixel matrix having two or more pixel arrays as separate segments logically divided in the pixel matrix. The pixel matrix may include both thermal sensing pixels and capacitive sensing nodes. The device or system may include a plurality of application-specific intergrade circuits (ASICs) coupled to the sensor. Each ASIC is configured to capture image data of a biometric pattern measured by at least one pixel array. Each pixel array is independently driven and scanned by one or more of the plurality of the ASICs. The device or system further includes a microcontroller unit coupled to the plurality of ASICs and are used to process the image data and/or control operation of the system. Such a sensor can be a fingerprint sensor.Type: ApplicationFiled: January 4, 2022Publication date: July 14, 2022Applicant: Next Biometrics Group ASAInventors: King Hong Kwan, Tian Xiao, Ryan John Higgins
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Publication number: 20220139781Abstract: Systems and methods for manufacturing flexible electronics are described herein. Methods in accordance with embodiments of the present technology can include disposing electrical features, such as thin film circuits, on a first side of a glass substrate, applying a first protective material over the electronic features, and exposing a second side of the glass substrate to a chemical etching tank to thin the glass substrate to a predetermined thickness. The thinning process can remove cracks and other defects from the second side of the glass substrate and enhance the flexibility of the electronic assembly. A second protective material can be disposed on the second side of the thinned glass substrate to maintain the enhanced backside surface of the glass substrate. In some embodiments, the method also includes singulating the plurality of electronic features into individual electronic components by submerging the electronic assembly into a chemical etching tank.Type: ApplicationFiled: January 19, 2022Publication date: May 5, 2022Applicant: NEXT Biometrics Group ASAInventors: Tian Xiao, King Hong Kwan, Sheng-Hsiang Hung, Mark W. Naumann
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Patent number: 11264279Abstract: Systems and methods for manufacturing flexible electronics are described herein. Methods in accordance with embodiments of the present technology can include disposing electrical features, such as thin film circuits, on a first side of a glass substrate, applying a first protective material over the electronic features, and exposing a second side of the glass substrate to a chemical etching tank to thin the glass substrate to a predetermined thickness. The thinning process can remove cracks and other defects from the second side of the glass substrate and enhance the flexibility of the electronic assembly. A second protective material can be disposed on the second side of the thinned glass substrate to maintain the enhanced backside surface of the glass substrate. In some embodiments, the method also includes singulating the plurality of electronic features into individual electronic components by submerging the electronic assembly into a chemical etching tank.Type: GrantFiled: April 16, 2020Date of Patent: March 1, 2022Assignee: NEXT Biometrics Group ASAInventors: Tian Xiao, King Hong Kwan, Sheng-Hsiang Hung, Mark W. Naumann
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Publication number: 20220044000Abstract: A protective coating layer, an electronic device including such a protective coating layer, and the methods of making the same are provided. The electronic device includes a substrate, a thin film circuit layer disposed over the substrate, and a protective coating layer disposed over the thin film circuit layer. The protective coating layer includes a first coating and a second coating disposed over the first coating. Each coating has a cross-plane thermal conductivity in a direction normal to a respective coating surface equal to or higher than 0.5 W/(m*K). The first coating and the second coating have different crystal or amorphous structures, different crystalline orientations, different compositions, or a combination thereof to provide different nanoindentation hardness. The first coating has a hardness lower than that of the second coating.Type: ApplicationFiled: September 21, 2021Publication date: February 10, 2022Applicant: NEXT Biometrics Group ASAInventors: Matias N. Troccoli, Tian Xiao
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Patent number: 11157717Abstract: A protective coating layer, an electronic device including such a protective coating layer, and the methods of making the same are provided. The electronic device includes a substrate, a thin film circuit layer disposed over the substrate, and a protective coating layer disposed over the thin film circuit layer. The protective coating layer includes a first coating and a second coating disposed over the first coating. Each coating has a cross-plane thermal conductivity in a direction normal to a respective coating surface equal to or higher than 0.5 W/(m*K). The first coating and the second coating have different crystal structures, or different crystalline orientations, or different compositions, or a combination thereof to provide different nanoindentation hardness. The first coating has a hardness lower than that of the second coating.Type: GrantFiled: July 9, 2019Date of Patent: October 26, 2021Assignee: NEXT Biometrics Group ASAInventors: Matias N. Troccoli, Tian Xiao
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Publication number: 20200335397Abstract: Systems and methods for manufacturing flexible electronics are described herein. Methods in accordance with embodiments of the present technology can include disposing electrical features, such as thin film circuits, on a first side of a glass substrate, applying a first protective material over the electronic features, and exposing a second side of the glass substrate to a chemical etching tank to thin the glass substrate to a predetermined thickness. The thinning process can remove cracks and other defects from the second side of the glass substrate and enhance the flexibility of the electronic assembly. A second protective material can be disposed on the second side of the thinned glass substrate to maintain the enhanced backside surface of the glass substrate. In some embodiments, the method also includes singulating the plurality of electronic features into individual electronic components by submerging the electronic assembly into a chemical etching tank.Type: ApplicationFiled: April 16, 2020Publication date: October 22, 2020Inventors: Tian Xiao, King Hong Kwan, Sheng-Hsiang Hung, Mark W. Naumann
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Publication number: 20200019750Abstract: A protective coating layer, an electronic device including such a protective coating layer, and the methods of making the same are provided. The electronic device includes a substrate, a thin film circuit layer disposed over the substrate, and a protective coating layer disposed over the thin film circuit layer. The protective coating layer includes a first coating and a second coating disposed over the first coating. Each coating has a cross-plane thermal conductivity in a direction normal to a respective coating surface equal to or higher than 0.5 W/(m*K). The first coating and the second coating have different crystal structures, or different crystalline orientations, or different compositions, or a combination thereof to provide different nanoindentation hardness. The first coating has a hardness lower than that of the second coating.Type: ApplicationFiled: July 9, 2019Publication date: January 16, 2020Applicant: Next Biometrics Group ASAInventors: Matias N. Troccoli, Tian Xiao
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Patent number: 10109647Abstract: A method of fabricating a high mobility semiconductor metal oxide thin film transistor including the steps of depositing a layer of semiconductor metal oxide material, depositing a blanket layer of etch-stop material on the layer of MO material, and patterning a layer of source/drain metal on the blanket layer of etch-stop material including etching the layer of source/drain metal into source/drain terminals positioned to define a channel area in the semiconductor metal oxide layer. The etch-stop material being electrically conductive in a direction perpendicular to the plane of the blanket layer at least under the source/drain terminals to provide electrical contact between each of the source/drain terminals and the layer of semiconductor metal oxide material. The etch-stop material is also chemical robust to protect the layer of semiconductor metal oxide channel material during the etching process.Type: GrantFiled: June 3, 2016Date of Patent: October 23, 2018Assignee: CBRITE INC.Inventors: Gang Yu, Chan-Long Shieh, Juergen Musolf, Fatt Foong, Tian Xiao
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Patent number: 9773918Abstract: A thin film circuit includes a thin film transistor with a metal oxide semiconductor channel having a conduction band minimum (CBM) with a first energy level. The transistor further includes a layer of passivation material covering at least a portion of the metal oxide semiconductor channel. The passivation material has a conduction band minimum (CBM) with a second energy level. The second energy level being lower than, equal to, or no more than 0.5 eV above the first energy level. The circuit is used for an electronic device including any one of an AMLCD, AMOLED, AMLED, AMEPD.Type: GrantFiled: June 29, 2015Date of Patent: September 26, 2017Assignee: CBRITE INC.Inventors: Gang Yu, Chan-Long Shieh, Juergen Musolf, Fatt Foong, Tian Xiao
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Patent number: 9768322Abstract: A method including providing a substrate with a gate, a layer of gate insulator material adjacent the gate, and a layer of metal oxide semiconductor material positioned on the gate insulator opposite the gate, forming a selectively patterned etch stop passivation layer and heating at elevated temperature in an oxygen-containing or nitrogen-containing or inert ambience to selectively increase the carrier concentration in regions of the metal oxide semiconductor not covered by the etch stop layer, on which overlying and spaced apart source/drain metals are formed. Subsequently heating the transistor in an oxygen-containing or nitrogen-containing or inert ambience to further improve the source/drain contacts and adjust the threshold voltage to a desired level. Providing additional passivation layer(s) on top of the transistor with electric insulation and barrier property to moisture and chemicals in the surrounding environment.Type: GrantFiled: August 1, 2016Date of Patent: September 19, 2017Assignee: CBRITE INC.Inventors: Gang Yu, Chan-Long Shieh, Tian Xiao, Fatt Foong
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Publication number: 20170069662Abstract: A method of fabricating a high mobility semiconductor metal oxide thin film transistor including the steps of depositing a layer of semiconductor metal oxide material, depositing a blanket layer of etch-stop material on the layer of MO material, and patterning a layer of source/drain metal on the blanket layer of etch-stop material including etching the layer of source/drain metal into source/drain terminals positioned to define a channel area in the semiconductor metal oxide layer. The etch-stop material being electrically conductive in a direction perpendicular to the plane of the blanket layer at least under the source/drain terminals to provide electrical contact between each of the source/drain terminals and the layer of semiconductor metal oxide material. The etch-stop material is also chemical robust to protect the layer of semiconductor metal oxide channel material during the etching process.Type: ApplicationFiled: June 3, 2016Publication date: March 9, 2017Inventors: Gang Yu, Chan-Long Shieh, Juergen Musolf, Fatt Foong, Tian Xiao
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Publication number: 20170033227Abstract: A method including providing a substrate with a gate, a layer of gate insulator material adjacent the gate, and a layer of metal oxide semiconductor material positioned on the gate insulator opposite the gate, forming a selectively patterned etch stop passivation layer and heating at elevated temperature in an oxygen-containing or nitrogen-containing or inert ambience to selectively increase the carrier concentration in regions of the metal oxide semiconductor not covered by the etch stop layer, on which overlying and spaced apart source/drain metals are formed. Subsequently heating the transistor in an oxygen-containing or nitrogen-containing or inert ambience to further improve the source/drain contacts and adjust the threshold voltage to a desired level. Providing additional passivation layer(s) on top of the transistor with electric insulation and barrier property to moisture and chemicals in the surrounding environment.Type: ApplicationFiled: August 1, 2016Publication date: February 2, 2017Inventors: Gang Yu, Chan-Long Shieh, Tian Xiao, Fatt Foong
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Publication number: 20160293769Abstract: A method of fabricating a stable, high mobility metal oxide thin film transistor includes the steps of providing a substrate, positioning a gate on the substrate, and depositing a gate dielectric layer on the gate and portions of the substrate not covered by the gate. A multiple film active layer including a metal oxide semiconductor film and a metal oxide passivation film is deposited on the gate dielectric with the passivation film positioned in overlying relationship to the semiconductor film. An etch-stop layer is positioned on a surface of the passivation film and defines a channel area in the active layer. A portion of the multiple film active layer on opposite sides of the etch-stop layer is modified to form an ohmic contact and metal source/drain contacts are positioned on the modified portion of the multiple film active layer.Type: ApplicationFiled: June 20, 2016Publication date: October 6, 2016Inventors: Chan-Long Shieh, Gang Yu, Fatt Foong, Tian Xiao, Juergen Musolf
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Patent number: 9412623Abstract: A method including providing a substrate with a gate, a layer of gate insulator material adjacent the gate, and a layer of metal oxide semiconductor material positioned on the gate insulator opposite the gate, forming a selectively patterned etch stop passivation layer and heating at elevated temperature in an oxygen-containing or nitrogen-containing or inert ambience to selectively increase the carrier concentration in regions of the metal oxide semiconductor not covered by the etch stop layer, on which overlying and spaced apart source/drain metals are formed. Subsequently heating the transistor in an oxygen-containing or nitrogen-containing or inert ambience to further improve the source/drain contacts and adjust the threshold voltage to a desired level. Providing additional passivation layer(s) on top of the transistor with electric insulation and barrier property to moisture and chemicals in the surrounding environment.Type: GrantFiled: August 24, 2015Date of Patent: August 9, 2016Assignee: CBRITE INC.Inventors: Gang Yu, Chan-Long Shieh, Tian Xiao, Fatt Foong