Abstract: Provided is a radiation image detector, including: a substrate; an optical image detector located on the substrate; and a radiation conversion layer located above the optical image detector to convert radiation into visible light. The optical image detector includes a photosensitive pixel array formed by a plurality of photosensitive pixels arranged periodically; each photosensitive pixel includes a photoelectric conversion layer which is capable of converting the visible light into electric charges. The photoelectric conversion layer includes an active region and an inactive region. The active region occupies less than 70% of the area of the photoelectric conversion layer. Each photosensitive pixel further includes a light-guide layer located between the radiation conversion layer and the photoelectric conversion layer and configured to guide the visible light to the active region.

Abstract: An image detector comprises a plurality of photosensitive pixels that each pixel includes a photoelectric conversion layer and a light shielding layer overlapped each other. A plurality of openings are made on the light shielding layer in a manner that its light passing area is substantially proportional to a distance from the opening to a border of the pixel.

Abstract: Embodiments of the present invention provide a radiation image detector and a manufacture method to produce the radiation image detector. The radiation image detector includes: a radiation conversion layer, configured to convert a radiation image into a visible light image; an image sensing layer for visible light, including a pixel array formed by a plurality of photosensitive pixels, configured to detect the visible light image; and a microlens layer, disposed between the radiation conversion layer and the image sensing layer, the microlens layer including a lens array formed by multiple micro convex lenses, and optical axes of the micro convex lenses being perpendicular to the image sensing layer. In addition, both the radiation conversion layer and the microlens layer have curved surface structures that are bended in the same direction that non-parallel radiations, emitted from an X-ray generator, will impinge perpendicularly on the radiation conversion layer.

Abstract: Provided is a radiation image detector, including: a substrate; a continued radiation conversion layer configured to convert radiation into visible light; an optical image detector on the substrate and between the radiation conversion layer and the substrate, wherein the optical image detector comprises an array of photosensitive pixels; a light-shielding structure located on a side of the plurality of photosensitive pixels facing away from the substrate, wherein the light-shielding structure has a plurality of openings to allow the visible light to reach the photosensitive pixels; and a light-collecting structure located between the radiation conversion layer and the light-shielding structure and comprising a plurality of convex lenses, wherein each convex lens has its optical axis perpendicular to the light-shielding structure and passing through one of the plurality of openings.

Abstract: A forming method for a silicon-based display panel includes providing a silicon substrate having a display region and a peripheral region surrounding the display region, providing a first set of photomasks corresponding to the display region, using the first set of photo masks in an exposure process of the display region, providing a second set of photomasks corresponding to the peripheral region, and using the second set of photomasks in an exposure process of the peripheral region. The exposure process of the display region and the exposure process of the peripheral region are different process steps. According to the forming method for the silicon-based display panel, splicing of pixel patterns in the display region is not carried out, so that the yield and the display effect are improved.

Abstract: The present invention provides a top-emission type micro cavity OLED display device, comprising: an array substrate; a reflection metal layer arranged on the array substrate; an anode modulation layer arranged on the reflection metal layer and made of a translucent conductive material; an organic light-emitting layer arranged on the anode modulation layer and not patterned; and a cathode layer arranged on the organic light-emitting layer. The top-emission type micro cavity OLED display device comprises a plurality of sub-pixels, and the anode modulation layer is divided into a plurality of anode modulation electrodes corresponding to the plurality of sub-pixels; the plurality of sub-pixels is at least classified into a first type sub-pixel, a second type sub-pixel and a third type sub-pixel; the first to third type sub-pixels display different colors, and the anode modulation electrodes corresponding to the first to third type sub-pixels have different thicknesses.

Abstract: A radiation image detector is provided. The radiation image detector includes: a substrate, an optical image detector located on the substrate and including an array including photosensitive pixels, a radiation conversion layer, and pixelated light-collecting structures located between the photosensitive pixels and the radiation conversion layer and configured to guide visible light that would fall into a trench region or a side wall region to a central region. Each photosensitive pixel includes a first electrode including a first contact surface in direct contact with the photoelectric conversion layer, a photoelectric conversion layer including the central region and the side wall region, and a second electrode including a second contact surface in direct contact with the photoelectric conversion layer.

Abstract: A pixel structure, a method for forming the pixel structure, and a display screen are provided. The method includes: providing a substrate for forming an OLED device, the substrate having a first pixel area, a second pixel area, and a third pixel area; and forming a compensation layer on the substrate, the compensation layer having different thicknesses in the first pixel area, the second pixel area, and the third pixel area. In the present disclosure, the compensation layer is formed on the substrate, and the compensation layer has different thicknesses respectively in the first pixel area, the second pixel area and the third pixel area, so that the cavity of the first pixel area, the cavity of the second pixel area, and the cavity of the third pixel area can be individually controlled.

Abstract: Provided is a radiation image detector, including: a substrate; a continued radiation conversion layer configured to convert radiation into visible light; an optical image detector on the substrate and between the radiation conversion layer and the substrate, wherein the optical image detector comprises an array of photosensitive pixels; a light-shielding structure located on a side of the plurality of photosensitive pixels facing away from the substrate, wherein the light-shielding structure has a plurality of openings to allow the visible light to reach the photosensitive pixels; and a light-collecting structure located between the radiation conversion layer and the light-shielding structure and comprising a plurality of convex lenses, wherein each convex lens has its optical axis perpendicular to the light-shielding structure and passing through one of the plurality of openings.

Abstract: Embodiments of the present invention provide a radiation image detector and a manufacture method to produce the radiation image detector. The radiation image detector includes: a radiation conversion layer, configured to convert a radiation image into a visible light image; an image sensing layer for visible light, including a pixel array formed by a plurality of photosensitive pixels, configured to detect the visible light image; and a microlens layer, disposed between the radiation conversion layer and the image sensing layer, the microlens layer including a lens array formed by multiple micro convex lenses, and optical axes of the micro convex lenses being perpendicular to the image sensing layer. In addition, both the radiation conversion layer and the microlens layer have curved surface structures that are bended in the same direction that non-parallel radiations, emitted from an X-ray generator, will impinge perpendicularly on the radiation conversion layer.

Abstract: An image detector comprises a plurality of photosensitive pixels that each pixel includes a photoelectric conversion layer and a light shielding layer overlapped each other. A plurality of openings are made on the light shielding layer in a manner that its light passing area is substantially proportional to a distance from the opening to a border of the pixel.

Abstract: Provided is a radiation image detector, including: a substrate; an optical image detector located on the substrate; and a radiation conversion layer located above the optical image detector to convert radiation into visible light. The optical image detector includes a photosensitive pixel array formed by a plurality of photosensitive pixels arranged periodically; each photosensitive pixel includes a photoelectric conversion layer which is capable of converting the visible light into electric charges. The photoelectric conversion layer includes an active region and an inactive region. The active region occupies less than 70% of the area of the photoelectric conversion layer. Each photosensitive pixel further includes a light-guide layer located between the radiation conversion layer and the photoelectric conversion layer and configured to guide the visible light to the active region.

Abstract: A radiation image detector is provided. The radiation image detector includes: a substrate, an optical image detector located on the substrate and including an array including photosensitive pixels, a radiation conversion layer, and pixelated light-collecting structures located between the photosensitive pixels and the radiation conversion layer and configured to guide visible light that would fall into a trench region or a side wall region to a central region. Each photosensitive pixel includes a first electrode including a first contact surface in direct contact with the photoelectric conversion layer, a photoelectric conversion layer including the central region and the side wall region, and a second electrode including a second contact surface in direct contact with the photoelectric conversion layer.

Abstract: A organic light-emitting diode (OLED) on Silicon product includes a circuit board, a central control board and an OLED on Silicon display panel located on the circuit board. A core control module and a timing control module are integrated in the central control board. The OLED on Silicon display panel has a display region, a gate row driving region, a source signal driving region, and a bonding region. OLED display pixels are provided in the display region. A gate row driving circuit is integrated in the gate row driving region. A source signal driving circuit is integrated in the source signal driving region. The bonding region is a region where the OLED on Silicon display panel is bound to the central control board. The OLED on Silicon product simplifies the processing process, reduces the cost and overall size of the product, and increases the area proportion of the display region.

Abstract: A shadow mask used for OLED evaporation and a manufacturing method therefor, and an OLED panel manufacturing method. The shadow mask used for OLED evaporation includes: a semiconductor substrate including a front surface and a back surface opposite thereto, a recess penetrating the front surface and the back surface being provided in the semiconductor substrate; and a grid film layer provided on the front surface of the semiconductor substrate. A number of openings arranged in an array are provided in the grid film layer. Each of the openings has an upper portion and a lower portion. A width of the upper portion is greater than a width of the lower portion. The recess exposes the number of openings in the grid film layer and the grid film layer between adjacent openings.

Abstract: An AMOLED display panel includes a pixel display array including a plurality of pixel circuits arranged in an array. A gate driving circuit is adapted to provide a gate scan signal to the pixel circuits. The gate scan signal is used to control an operation stage of the pixel circuits. A source driving circuit is provided with a digital video signal and adapted to generate a data voltage in accordance with the digital video signal. The data voltage is used to control a light-emitting state of a light-emitting element in the plurality of pixel circuits. The pixel display array, the gate driving circuit and the source driving circuit are integrated on the same chip substrate. The source driving circuit is adapted to be coupled to a panel control circuit external to the chip substrate.

Abstract: A organic light-emitting diode (OLED) on Silicon product includes a circuit board, a central control board and an OLED on Silicon display panel located on the circuit board. A core control module and a timing control module are integrated in the central control board. The OLED on Silicon display panel has a display region, a gate row driving region, a source signal driving region, and a bonding region. OLED display pixels are provided in the display region. A gate row driving circuit is integrated in the gate row driving region. A source signal driving circuit is integrated in the source signal driving region. The bonding region is a region where the OLED on Silicon display panel is bound to the central control board. The OLED on Silicon product simplifies the processing process, reduces the cost and overall size of the product, and increases the area proportion of the display region.

Abstract: The present invention provides a top-emission type micro cavity OLED display device, comprising: an array substrate; a reflection metal layer arranged on the array substrate; an anode modulation layer arranged on the reflection metal layer and made of a translucent conductive material; an organic light-emitting layer arranged on the anode modulation layer and not patterned; and a cathode layer arranged on the organic light-emitting layer. The top-emission type micro cavity OLED display device comprises a plurality of sub-pixels, and the anode modulation layer is divided into a plurality of anode modulation electrodes corresponding to the plurality of sub-pixels; the plurality of sub-pixels is at least classified into a first type sub-pixel, a second type sub-pixel and a third type sub-pixel; the first to third type sub-pixels display different colors, and the anode modulation electrodes corresponding to the first to third type sub-pixels have different thicknesses.

Abstract: An AMOLED display panel includes a pixel display array including a plurality of pixel circuits arranged in an array. A gate driving circuit is adapted to provide a gate scan signal to the pixel circuits. The gate scan signal is used to control an operation stage of the pixel circuits. A source driving circuit is provided with a digital video signal and adapted to generate a data voltage in accordance with the digital video signal. The data voltage is used to control a light-emitting state of a light-emitting element in the plurality of pixel circuits. The pixel display array, the gate driving circuit and the source driving circuit are integrated on the same chip substrate. The source driving circuit is adapted to be coupled to a panel control circuit external to the chip substrate.

Abstract: A pixel structure, a method for forming the pixel structure, and a display screen are provided. The method includes: providing a substrate for forming an OLED device, the substrate having a first pixel area, a second pixel area, and a third pixel area; and forming a compensation layer on the substrate, the compensation layer having different thicknesses in the first pixel area, the second pixel area, and the third pixel area. In the present disclosure, the compensation layer is formed on the substrate, and the compensation layer has different thicknesses respectively in the first pixel area, the second pixel area and the third pixel area, so that the cavity of the first pixel area, the cavity of the second pixel area, and the cavity of the third pixel area can be individually controlled.