Abstract: The invention provides a material surface treatment equipment, which is applied to a material substrate. The material surface treatment equipment includes a surface treatment device and at least one waveguide device. The surface treatment device is used to carry the material substrate to perform a surface treatment process. Each waveguide device is used for introducing electromagnetic waves to the material substrate to assist in performing the surface treatment process. Through the introduction of electromagnetic waves, the surface treatment process of the material substrate is easy to perform and can achieve the strengthening effect.

Abstract: A substrate processing method includes providing a substrate, wherein the substrate has a surface and a bottom surface opposite to each other, the substrate is defined with a predetermined area, the predetermined area is defined with a predetermined reaction part, and the predetermined reaction part extends from the surface toward the bottom surface of the substrate; performing a anodization reaction on the predetermined reaction part by an electrochemical method to convert the predetermined reaction part into a weakened layer, wherein the weakened layer has a thickness; and removing the weakened layer so that the substrate in the predetermined area has an exposed surface.

Abstract: The present disclosure relates to an extreme ultraviolet (EUV) pellicle having a pellicle film connected to a pellicle frame. In some embodiments, the EUV pellicle has a substrate, and an adhesive material disposed onto the substrate. A pellicle frame is connected to the substrate by way of the adhesive material. The pellicle frame is configured to mount the substrate to an extreme ultraviolet (EUV) reticle.

Abstract: The present disclosure relates to an extreme ultraviolet (EUV) pellicle having a pellicle film connected to a pellicle frame. In some embodiments, the EUV pellicle has a substrate, and an adhesive material disposed onto the substrate. A pellicle frame is connected to the substrate by way of the adhesive material. The pellicle frame is configured to mount the substrate to an extreme ultraviolet (EUV) reticle.

Abstract: The present disclosure relates to a method of forming an extreme ultraviolet (EUV) pellicle having an pellicle film connected to a pellicle frame without a supportive mesh, and an associated apparatus. In some embodiments, the method is performed by forming a cleaving plane within a substrate. A pellicle frame is attached to an upper surface of the substrate, and the substrate is cleaved along the cleaving plane to form a pellicle film attached to the pellicle frame. The method forms the pellicle without using a support structure, which may block EUV radiation and cause substantial non-uniformities in the intensity of EUV radiation incident on an EUV reticle.

Abstract: The present disclosure relates to a method of forming an extreme ultraviolet (EUV) pellicle having an pellicle film connected to a pellicle frame without a supportive mesh, and an associated apparatus. In some embodiments, the method is performed by forming a cleaving plane within a substrate. A pellicle frame is attached to an upper surface of the substrate, and the substrate is cleaved along the cleaving plane to form a pellicle film attached to the pellicle frame. The method forms the pellicle without using a support structure, which may block EUV radiation and cause substantial non-uniformities in the intensity of EUV radiation incident on an EUV reticle.

Abstract: The present disclosure relates to a method of forming an EUV pellicle having an pellicle film connected to a pellicle frame without a supportive mesh, and an associated apparatus. In some embodiments, the method is performed by forming a cleaving plane within a substrate at a position parallel to a top surface of the substrate. A pellicle frame is attached to the top surface of the substrate. The substrate is cleaved along the cleaving plane to form a pellicle film comprising a thinned substrate coupled to the pellicle frame. Prior to cleaving the substrate, the substrate is operated upon to reduce structural damage to the top surface of substrate during formation of the cleaving plane and/or during cleaving the substrate. Reducing structural damage to the top surface of the substrate improves the durability of the thinned substrate and removes a need for a support structure for the pellicle film.

Abstract: A method for producing a thin film includes the following steps: providing a primary substrate; forming an etching stop layer on the primary substrate; forming a sacrificial layer on the etching stop layer; implanting gas ions to form an ion implantation peak layer, which defines an effective transferred layer and a remnant layer; and separating the effective transferred layer from the remnant layer. The thickness of the effective transferred layer can be effectively determined by controlling the thickness of the sacrificial layer. Moreover, the thickness of the effective transferred layer can be uniform and then the effective transferred layer can become a nanoscale thin film.

Abstract: A method for producing a thin film includes the following steps: providing a primary substrate; forming an etching stop layer on the primary substrate; forming a sacrificial layer on the etching stop layer; implanting gas ions to form an ion implantation peak layer, which defines an effective transferred layer and a remnant layer; and separating the effective transferred layer from the remnant layer. The thickness of the effective transferred layer can be effectively determined by controlling the thickness of the sacrificial layer. Moreover, the thickness of the effective transferred layer can be uniform and then the effective transferred layer can become a nanoscale thin film.

Abstract: A method for manufacturing a substrate structure comprising a film and a substrate structure made by this method are disclosed. The method for manufacturing a substrate structure comprising a film includes the steps of: providing a target substrate; providing an initial substrate; forming an embrittlement-layer on the initial substrate; forming a device layer on the embrittlement-layer; doping with hydrogen ions; bonding the device layer with the target substrate; and separating the device layer from the initial substrate. The hydrogen ions are added into the embrittlement-layer through doping, before an energy treatment is applied to embrittle and break the embrittlement-layer, thereby separating the device layer from the initial substrate. Since the hydrogen ions are added into the embrittlement-layer through doping, a crystal lattice structure of the device layer will not be damaged during the step of doping with hydrogen ions.

Abstract: Systems and methods for transferring a thin film from a substrate onto another substrate, a layer of the same area as the substrate, of a thickness from sub-micron to tens of micron, and of the thickness and flatness required by VLSI and MEMS applications, and with sufficiently low defect density in the transferred layer are disclosed. The method enables separating a solid layer from a supply substrate and optionally transferring the solid layer onto a target substrate. The method generally includes providing the solid layer on a hydrogen recombination region containing hydrogen-recombination-dopant at a concentration higher than that of the solid layer. The supply substrate includes the solid layer, a mother substrate, and the hydrogen recombination region. The hydrogen recombination region may form a part of the mother substrate or may be separate therefrom.

Abstract: Systems and methods for transferring a thin film from a substrate onto another substrate, a layer of the same area as the substrate, of a thickness from sub-micron to tens of micron, and of the thickness and flatness required by VLSI and MEMS applications, and with sufficiently low defect density in the transferred layer are disclosed. The method enables separating a solid layer from a supply substrate and optionally transferring the solid layer onto a target substrate. The method generally includes providing the solid layer on a hydrogen recombination region containing hydrogen-recombination-dopant at a concentration higher than that of the solid layer. The supply substrate includes the solid layer, a mother substrate, and the hydrogen recombination region. The hydrogen recombination region may form a part of the mother substrate or may be separate therefrom.

Abstract: The invention provides a thin-film transferring method, which can separate a thin film from a supply substrate and transfer it to a demand substrate. The method is practiced first by a process of ion implantation, which implants ions in a supply substrate to form an ion separation layer under implanted surface, and then followed by a wafer-bonding method, which joins the supply substrate with a demand substrate. The resulting bonded structure is to be going through a high-energy ion activation activity, in which the implanted ions incorporate into aerial particles, which fill the cleaves, resulting in a separation film, which is to be transferred to the demand substrate in wafer bonding process. As a part of this invention, the cooling device can remove the heat current produced from the high-energy ion activation, so as to prevent the bonded structure—made from different materials—being damaged by heat due to the different thermal expansion coefficient.