Abstract: Embodiments of the present disclosure describe a white light illumination system using InGaN-based orange nanowires (NWs) LED, in conjunction with a blue LD for high speed optical wireless communications. By changing the relative intensities of an ultrabroad linewidth orange LED and narrow-linewidth blue LD components, a hybrid LED/LD device achieves correlated color temperature (CCT) ranging from 3000 K to above 6000K with color rendering index (CRI) values reaching 83.1.

Abstract: Embodiments of the present disclosure describe an underwater optical communication and illumination system employing laser diodes directly encoded with data, including spectrally efficient orthogonal frequency division multiplex quadrature amplitude modulation (QAM-OFDM) data. A broadband light source may be utilized to provide both illumination to an underwater field of interest and underwater optical communication from the field of interest to a remote location.

Abstract: A system and method are provided for indoor agriculture using at least one growth chamber illuminated by laser light. In an example embodiment of the agriculture system, a growth chamber is provided having one or more walls defining an interior portion of the growth chamber. The agriculture system may include a removable tray disposed within the interior portion of the growth chamber. The agriculture system also includes a light source, which may be disposed outside the growth chamber. The one or more walls may include at least one aperture. The light source is configured to illuminate at least a part of the interior portion of the growth chamber. In embodiments in which the light source is disposed outside the growth chamber, the light source is configured to transmit the laser light to the interior portion of the growth chamber via the at least one aperture.

Abstract: A method to improve the external light efficiency of light emitting diodes, the method comprising etching an external surface of an n-type layer of the light emitting diode to form surface texturing, the surface texturing reducing internal light reflection to increase light output. A corresponding light emitting diode is also disclosed.

Abstract: Disclosed is a method for fabrication of a semiconductor of gallium nitride arsenide antimonide (GaNAsSb) on a substrate wherein the fabrication is performed at a fabrication temperature followed by annealing at an annealing temperature for an annealing time; wherein at least one of: the fabrication temperature, annealing temperature and annealing time, is controlled for controlling defect formation in the semiconductor so as to achieve predetermined performance characteristics of the semiconductor.

Abstract: Disclosed is a method for fabrication of a semiconductor of gallium nitride arsenide antimonide (GaNAsSb) on a substrate wherein the fabrication is performed at a fabrication temperature followed by annealing at an annealing temperature for an annealing time; wherein at least one of: the fabrication temperature, annealing temperature and annealing time, is controlled for controlling defect formation in the semiconductor so as to achieve predetermined performance characteristics of the semiconductor.

Abstract: A method to improve the external light efficiency of light emitting diodes, the method comprising etching an external surface of an n-type layer of the light emitting diode to form surface texturing, the surface texturing reducing internal light reflection to increase light output. A corresponding light emitting diode is also disclosed.