Abstract: An encapsulated semiconductor chip module. The chip module has the overlying encapsulant adhered directly and integrally to bare portions of the substrate to which the chip is mounted. This configuration enhances the adhesion and inhibits unintended delamination of the encapsulant from the balance of the module. The module is made by patterning anchor openings into the solder mask. The anchor openings expose corresponding portions of the substrate. It is important to locate the anchor openings over parts of the substrate that do not have circuitry on them, that is, on bare portions, so as to avoid corrosion or contamination of the circuit connections.

Abstract: An encapsulated semiconductor chip module. The chip module has the overlying encapsulant adhered directly and integrally to bare portions of the substrate to which the chip is mounted. This configuration enhances the adhesion and inhibits unintended delamination of the encapsulant from the balance of the module. The module is made by patterning anchor openings into the solder mask. The anchor openings expose corresponding portions of the substrate. It is important to locate the anchor openings over parts of the substrate that do not have circuitry on them, that is, on bare portions, so as to avoid corrosion or contamination of the circuit connections.

Abstract: An encapsulated semiconductor chip module. The chip module has the overlying encapsulant adhered directly and integrally to bare portions of the substrate to which the chip is mounted. This configuration enhances the adhesion and inhibits unintended delamination of the encapsulant from the balance of the module. The module is made by patterning anchor openings into the solder mask. The anchor openings expose corresponding portions of the substrate. It is important to locate the anchor openings over parts of the substrate that do not have circuitry on them, that is, on bare portions, so as to avoid corrosion or contamination of the circuit connections.

Abstract: A power/ground structure and associated circuit card or board are provided in which the coefficient of thermal expansion of the power/ground structure and associated circuit board are closely matched to each other. The circuit board or card is formed of organic electrically-insulating material having electrical circuitry thereon which carries an integrated circuit chip. The power/ground assembly is formed of alternating layers of organic insulating material and at least two layers of electrically-conducting material, typically copper, one of the layers of electrically-conducting material forming a power connection and another layer of the electrically-conducting material forming a ground plane. There is also at least one additional layer of a structural material having a relatively high Young's Modulus and a CTE of less than about 10 PPM/.degree.C. Invar or copper clad Invar are preferred materials for this structure.

Abstract: The present invention provides a novel method for improving the adhesion of polymers, particularly adhesives, to nickel surfaces. The method involves contacting the nickel surface with a hydrogen peroxide solution having a temperature of at least about 40.degree. C. for a time sufficient to form a wettable oxide surface having a water contact angle of less than about 10.degree..

Abstract: An electronic package having an active cooling system for maintaining a semiconductor chip at approximately a constant temperature by monitoring the present temperature of the chip and varying the air flow over a heat sink in thermal contact with the chip in response to the temperature. In addition, the temperature difference between the semiconductor chip module and a printed circuit board is also monitored to maintain that difference at a preset value. The air flow is varied by a variable speed fan or a variable direction baffle.

Abstract: A method of making a multilayered circuit board wherein at least two layered subassemblies, each comprising a dielectric layer and at least one conductive layer therein, are bonded together. Each subassembly includes a through-hole extending therethrough which is aligned with a respective through-hole of the other prior to bonding. The subassemblies are compressed at a predetermined pressure (e.g., 300 psi) and then heated to a first temperature (e.g., 300.degree. C.) for an established time period, resulting in formation of a bond between the two through-holes. The resulting alloy formed from this bond possesses a melting point significantly greater than that of the subassembly dielectric (e.g., PTFE). Following this time period, the compressed subassemblies are heated to an even greater temperature (e.g., 380.degree. C.), again for an established time period, to assure dielectric flow. The subassembly is then cooled and the pressure removed.

Abstract: A method of making a multilayered circuit board wherein at least two layered subassemblies, each comprising a dielectric layer and at least one conductive layer therein, are bonded together. Each subassembly includes a through-hole extending therethrough which is aligned with a respective through-hole of the other prior to bonding. The subassemblies are compressed at a predetermined pressure (e.g., 300 psi) and then heated to a first temperature (e.g., 300.degree. C.) for an established time period, resulting in formation of a bond between the two through-holes. The resulting alloy formed from this bond possesses a melting point significantly greater than that of the subassembly dielectric (e.g., PTFE). Following this time period, the compressed subassemblies are heated to an even greater temperature (e.g., 380.degree. C.), again for an established time period, to assure dielectric flow. The subassembly is then cooled and the pressure removed.