Abstract: Disclosed is a method and apparatus for utilizing a variable gain algorithm for adjusting a capacitor in an automatic radio frequency (RF) impedance matching network. The apparatus may operate in a closed-loop feedback control system, with one or more error signals driving the capacitors within the system. To achieve a critically damped control system response, multiple operating regions for the matching network and its constituent elements may be identified and a set of gains (e.g., different per region) may be applied to the error signals in the control system when operating in those regions. An operating region may be defined by characteristics of the input signals measured by the apparatus, calculated by the apparatus, or the state of the apparatus itself. These features may be arranged in a look up table (or determined by calculation) for the apparatus to use to determine the variable gains in the system.

Abstract: An apparatus for obtaining ion energy distribution, IED, measurements in a plasma processing system, in one example, comprising a substrate for placement in the plasma processing system and exposed to the plasma, an ion energy analyser disposed in the substrate for measuring the ion energy distribution at the substrate surface during plasma processing, the analyser comprising a first conductive grid, a second conductive grid, a third conductive grid, a fourth conductive grid, and a collection electrode, each grid separated by an insulation layer, a battery power supply and control circuitry, integrated in the substrate, for supplying and controlling voltage to each of the grids and the collector of the ion energy analyser; wherein at least one insulation layer includes a peripheral portion which is of reduced thickness with respect to the remaining portion of the insulation layer.

Abstract: The present disclosure relates to plasma generation systems which utilize plasma for semiconductor processing. The plasma generation system disclosed herein employs a hybrid matching network. The plasma generation system includes a RF generator and a matching network. The matching network includes a first-stage to perform low-Q impedance transformations during high-speed variations in impedance. The matching network includes a second-stage to perform impedance matching for high-Q impedance transformations. The matching network further includes a sensor coupled to the first-stage and the second-stage to calculate the signals that are used to engage the first and second-stages. The matching network includes a first-stage network that is agile enough to tune each state in a modulated RF waveform and a second-stage network to tune a single state in a RF modulated waveform. The plasma generation system also includes a plasma chamber coupled to the matching network.

Abstract: A variable capacitor includes first and second movable capacitor plate assemblies disposed in the interior of an enclosure and include a first and second movable capacitor plates. A first fixed capacitor plate and a second fixed capacitor plate are respectively disposed proximal to the first and second movable capacitor plates. The capacitor plates may comprise variably interdigitated concentric cylindrical blades, The first movable capacitor plate and the first fixed capacitor plate may be coaxial with the second movable capacitor plate and the second fixed capacitor plate. Actuators may be provided for independently advancing and retracting the first and second movable capacitor plate assemblies with respect to the first and second fixed capacitor plate assemblies to vary the capacitance of the variable capacitor by independently adjusting an amount of interdigitization of the capacitor plates of respective capacitor plate assembly pairs.

Abstract: A variable capacitor includes an enclosure having first and second conductive collars separated by an intermediate electrically insulating element. A movable capacitor plate assembly is electrically coupled to the first conductive collar, and a fixed capacitor plate assembly is electrically coupled to the second conductive collar. An actuator extends into the enclosure for advancing and retracting the movable capacitor plate assembly relative to the fixed capacitor plate assembly. A hermetically sealed volume within the enclosure maintains a vacuum or a liquid serving as a dielectric between a capacitor plate of the movable capacitor plate assembly and a capacitor plate of the fixed capacitor plate assembly. At least one capacitor plate comprises a coiled cylindrical plate having a having a greater height at a center portion of the capacitor plate coil and a lower height at an outer portion of the capacitor plate coil.

Abstract: The present disclosure relates to plasma generation systems which utilize plasma for semiconductor processing. The plasma generation system disclosed herein employs a hybrid matching network. The plasma generation system includes a RF generator and a matching network. The matching network includes a first-stage to perform low-Q impedance transformations during high-speed variations in impedance. The matching network includes a second-stage to perform impedance matching for high-Q impedance transformations. The matching network further includes a sensor coupled to the first-stage and the second-stage to calculate the signals that are used to engage the first and second-stages. The matching network includes a first-stage network that is agile enough to tune each state in a modulated RF waveform and a second-stage network to tune a single state in a RF modulated waveform. The plasma generation system also includes a plasma chamber coupled to the matching network.

Abstract: A variable capacitor includes an enclosure having first and second conductive collars separated by an intermediate electrically insulating element. A movable capacitor plate assembly is electrically coupled to the first conductive collar, and a fixed capacitor plate assembly is electrically coupled to the second conductive collar. An actuator extends into the enclosure for advancing and retracting the movable capacitor plate assembly relative to the fixed capacitor plate assembly. A hermetically sealed volume within the enclosure contains a dielectric fluid serving as a dielectric between a capacitor plate of the movable capacitor plate assembly and a capacitor plate of the fixed capacitor plate assembly. A flexible structure is provided to contain the dielectric fluid displaced when the movable capacitor plate assembly is advanced toward the fixed capacitor plate assembly.

Abstract: A plasma generation system includes an impedance matching network calibrated to map desired matching network impedance values to closest available settings of impedance control components. The tuning controller defines a set of target impedance values spaced-apart throughout the tuning range and drives the matching network to generate a set of closest frame tuning values proximate to each target impedance value. The tuning controller computes interpolated tuning values between adjacent pairs of frame tuning values and stores a tuning database that maps available matching network impedance values to specific sets of settings for the impedance control components. After the calibration stage, the tuning controller automatically utilizes the tuning database to map desired matching network impedance values to available settings of the impedance control components on an ongoing basis. Representative embodiments include variable loading and tuning capacitors in series with a fixed or variable phase-shift inductor.

Abstract: The present disclosure relates to plasma generation systems which utilize plasma for semiconductor processing. The plasma generation system disclosed herein employs a hybrid matching network. The plasma generation system includes a RF generator and a matching network. The matching network includes a first-stage to perform low-Q impedance transformations during high-speed variations in impedance. The matching network includes a second-stage to perform impedance matching for high-Q impedance transformations. The matching network further includes a sensor coupled to the first-stage and the second-stage to calculate the signals that are used to engage the first and second-stages. The matching network includes a first-stage network that is agile enough to tune each state in a modulated RF waveform and a second-stage network to tune a single state in a RF modulated waveform. The plasma generation system also includes a plasma chamber coupled to the matching network.

Abstract: Disclosed is a method and apparatus for utilizing a variable gain algorithm for adjusting a capacitor in an automatic radio frequency (RF) impedance matching network. The apparatus may operate in a closed-loop feedback control system, with one or more error signals driving the capacitors within the system. To achieve a critically damped control system response, multiple operating regions for the matching network and its constituent elements may be identified and a set of gains (e.g., different per region) may be applied to the error signals in the control system when operating in those regions. An operating region may be defined by characteristics of the input signals measured by the apparatus, calculated by the apparatus, or the state of the apparatus itself. These features may be arranged in a look up table (or determined by calculation) for the apparatus to use to determine the variable gains in the system.

Abstract: An electromagnetic field sensor may include a housing including an opening extending therethrough; a dielectric element including a first section having a first interior space and a second section having a second interior space, the dielectric element being received within the opening of the housing; and a conductor disposed within and approximating the first interior space and the second interior space of the dielectric element, the conductor including a first portion defining a first frustrum shape and a second portion defining a second frustrum shape, the first interior space receiving the first portion of the conductor and the second interior space receiving the second portion of the conductor. The electromagnetic field sensor for use in a matching network of a plasma generation system or other application.

Abstract: The present disclosure relates to plasma generation systems which utilize plasma for semiconductor processing. The plasma generation system disclosed herein employs a hybrid matching network. The plasma generation system includes a RF generator and a matching network. The matching network includes a first-stage to perform low-Q impedance transformations during high-speed variations in impedance. The matching network includes a second-stage to perform impedance matching for high-Q impedance transformations. The matching network further includes a sensor coupled to the first-stage and the second-stage to calculate the signals that are used to engage the first and second-stages. The matching network includes a first-stage network that is agile enough to tune each state in a modulated RF waveform and a second-stage network to tune a single state in a RF modulated waveform. The plasma generation system also includes a plasma chamber coupled to the matching network.

Abstract: An apparatus for obtaining ion energy distribution, IED, measurements in a plasma processing system, in one example, comprising a substrate for placement in the plasma processing system and exposed to the plasma, an ion energy analyser disposed in the substrate for measuring the ion energy distribution at the substrate surface during plasma processing, the analyser comprising a first conductive grid, a second conductive grid, a third conductive grid, a fourth conductive grid and a collection electrode, each grid separated by an insulation layer, a battery power supply and control circuitry, integrated in the substrate, for supplying and controlling voltage to each of the grids and the collector of the ion energy analyser; and a high voltage generating circuit.

Abstract: An apparatus for obtaining ion energy distribution, TED, measurements in a plasma processing system, in one example, comprising a substrate for placement in the plasma processing system and exposed to the plasma, an ion energy analyser disposed in the substrate for measuring the ion energy distribution at the substrate surface during plasma processing, the analyser comprising a first conductive grid, a second conductive grid, a third conductive grid, a fourth conductive grid, and a collection electrode, each grid separated by an insulation layer, a battery power supply and control circuitry, integrated in the substrate, for supplying and controlling voltage to each of the grids and the collector of the ion energy analyser; wherein at least one insulation layer includes a peripheral portion which is of reduced thickness with respect to the remaining portion of the insulation layer.

Abstract: The present disclosure relates to plasma generation systems which utilize plasma for semiconductor processing. The plasma generation system disclosed herein employs a hybrid matching network. The plasma generation system includes a RF generator and a matching network. The matching network includes a first-stage to perform low-Q impedance transformations during high-speed variations in impedance. The matching network includes a second-stage to perform impedance matching for high-Q impedance transformations. The matching network further includes a sensor coupled to the first-stage and the second-stage to calculate the signals that are used to engage the first and second-stages. The matching network includes a first-stage network that is agile enough to tune each state in a modulated RF waveform and a second-stage network to tune a single state in a RF modulated waveform. The plasma generation system also includes a plasma chamber coupled to the matching network.

Abstract: The present disclosure relates to plasma generation systems which utilize plasma for semiconductor processing. The plasma generation system disclosed herein employs a hybrid matching network. The plasma generation system includes a RF generator and a matching network. The matching network includes a first-stage to perform low-Q impedance transformations during high-speed variations in impedance. The matching network includes a second-stage to perform impedance matching for high-Q impedance transformations. The matching network further includes a sensor coupled to the first-stage and the second-stage to calculate the signals that are used to engage the first and second-stages. The matching network includes a first-stage network that is agile enough to tune each state in a modulated RF waveform and a second-stage network to tune a single state in a RF modulated waveform. The plasma generation system also includes a plasma chamber coupled to the matching network.

Abstract: The present disclosure relates to plasma generation systems which utilize plasma for semiconductor processing. The plasma generation system disclosed herein employs a hybrid matching network. The plasma generation system includes a RF generator and a matching network. The matching network includes a first-stage to perform low-Q impedance transformations during high-speed variations in impedance. The matching network includes a second-stage to perform impedance matching for high-Q impedance transformations. The matching network further includes a sensor coupled to the first-stage and the second-stage to calculate the signals that are used to engage the first and second-stages. The matching network includes a first-stage network that is agile enough to tune each state in a modulated RF waveform and a second-stage network to tune a single state in a RF modulated waveform. The plasma generation system also includes a plasma chamber coupled to the matching network.