Abstract: An apparatus and its use for laser processing along with a method and an optical component. A first laser device provides a first optical feed fiber and a second laser device provides a second optical feed fiber. A beam combining means connected to the first and second feed fibers and to a multi-core optical fiber is adapted to form a composite laser beam by having the first optical feed fiber aligned with a first core of the multi-core optical fiber and the second optical feed fiber aligned with at least one second core of the multi-core optical fiber. The first and second cores outputs a composite laser beam to a workpiece to be processed. A control unit individually controls the power density of the output laser beams.

Abstract: The invention concerns an apparatus and its use for laser processing. The invention also concerns a method and an optical component. According to the invention, at a first laser device, providing a first optical feed fiber and a second laser device providing a second optical feed fiber is provided. A beam combining means connected to the first and second feed fibers and to a multi-core optical fiber is adapted to form a composite laser beam by having the first optical feed fiber aligned with a first core of the multi-core optical fiber and the second optical feed fiber aligned with at least one second core of the multi-core optical fiber. The first and second cores outputs a composite laser beam to a workpiece to be processed. A control unit individually controls the power density of the output laser beams.

Abstract: The invention relates to a method and apparatus for processing substrates, such as glass and semiconductor wafers. The method comprises directing to the substrate from a laser source a plurality of sequential focused laser pulses having a predetermined duration, pulsing frequency and focal spot diameter, the pulses being capable of locally melting the substrate, and moving the laser source and the substrate with respect to each other at a predetermined moving velocity so that a structurally modified zone is formed to the substrate. According to the invention, the pulse duration is in the range of 20-100 ps, pulsing frequency at least 1 MHz and moving velocity adjusted such that the distance between successive pulses is less than ? of the diameter of the focal spot. The invention can be utilized, for example, for efficient dicing, scribing and welding of materials which are normally transparent.

Abstract: The invention concerns a method of fusing and electrically contacting a first insulating substrate (28A) having at least one first conductive layer (29A) thereon with at least one second insulating substrate (28B) having at least one second conductive layer (29B) thereon, the method comprising: stacking the first and second substrates (28A, 28B) such that an interface zone is formed between them, the interface zone comprising an electrical contacting zone where at least one first conductive layers (29A) faces and is at least partially aligned with at least one second conductive layer (29B), and a substrate fusing zone where the insulating substrates (28A, 28B) directly face each other; focusing to the interface zone of the substrates (28A, 28B) through one of the substrates (28A, 28B) a plurality of sequential focused laser pulses from a laser source, the pulse duration, pulse frequency and pulse power of the laser light being chosen to provide local melting the substrate (28A, 28B) materials and the conducti

Abstract: The invention concerns a method of fusing and electrically contacting a first insulating substrate (28A) having at least one first conductive layer (29A) thereon with at least one second insulating substrate (28B) having at least one second conductive layer (29B) thereon, the method comprising: stacking the first and second substrates (28A, 28B) such that an interface zone is formed between them, the interface zone comprising an electrical contacting zone where at least one first conductive layers (29A) faces and is at least partially aligned with at least one second conductive layer (29B), and a substrate fusing zone where the insulating substrates (28A, 28B) directly face each other; focusing to the interface zone of the substrates (28A, 28B) through one of the substrates (28A, 28B) a plurality of sequential focused laser pulses from a laser source, the pulse duration, pulse frequency and pulse power of the laser light being chosen to provide local melting the substrate (28A, 28B) materials and the conducti

Abstract: The invention relates to a method and apparatus for processing substrates, such as glass and semiconductor wafers. The method comprises directing to the substrate from a laser source a plurality of sequential focused laser pulses having a predetermined duration, pulsing frequency and focal spot diameter, the pulses being capable of locally melting the substrate, and moving the laser source and the substrate with respect to each other at a predetermined moving velocity so that a structurally modified zone is formed to the substrate. According to the invention, the pulse duration is in the range of 20-100 ps, pulsing frequency at least 1 MHz and moving velocity adjusted such that the distance between successive pulses is less than ? of the diameter of the focal spot. The invention can be utilized, for example, for efficient dicing, scribing and welding of materials which are normally transparent.