Abstract: An organic, optoelectronic component (10) is specified, comprising a three-dimensional substrate body (1), which has a closed substrate surface (1a), a radiation-emitting layer sequence (2), which has at least one layer (2a, 2b, 2c, 2d, 2e), containing an organic material, wherein the radiation-emitting layer sequence (2) is applied to the closed substrate surface (1a) and forms a curved area.

Abstract: A radiation-emitting device with a first electrode, a first emission layer, a second emission layer and a second electrode. The invention additionally relates to a method of producing a radiation-emitting device.

Abstract: An optoelectronic component includes at least one inorganic optoelectronically active semiconductor component having an active region that emits or receives light during operation, and a sealing material applied by atomic layer deposition on at least one surface region, the sealing material covering the surface region in a hermetically impermeable manner.

Abstract: An electroluminescent organic semiconductor element includes a substrate and a first electrode arranged on the substrate. The semiconductor element additionally contains a second electrode and at least one organic layer, which is arranged between the first electrode and the second electrode. The organic layer is a layer that generates light by recombination of charge carriers. At least one of the first and the second electrode contains a highly conductive organic sublayer.

Abstract: A method for producing an electronic component with at least one first electrode zone (21) and one second electrode zone (23), which are separated from one another by an insulator (9) and each comprise at least one sublayer of a first electrically conductive material. Also disclosed is an electronic component, which may be produced using the disclosed method.

Abstract: A device comprising: a first substrate (1); a second substrate; at least one optoelectronic component (4) containing at least one organic material is arranged on the first substrate; the first substrate (1) and the second substrate (2) being arranged relative to one another in such a way that the optoelectronic component (4) is arranged between the first substrate (1) and the second substrate; a bonding material (3) is arranged between the first substrate (1) and the second substrate (2), said bonding material enclosing the optoelectronic component (4) in a frame type fashion and mechanically connecting the first and second substrates (1, 2) to one another; and wherein the bonding material (3) was softened by an exothermic chemical process of a reactive material (7) for mechanically connecting the substrates (1, 2).

Abstract: In at least one embodiment of the component (10) the latter comprises a first substrate (1) and a second substrate (2), at least one radiation-emitting or radiation-receiving element (3) being arranged on the first substrate (1), which element contains at least one organic material. The first substrate (1) and the second substrate (2) are arranged relative to one another such that the element (3) is located between the first substrate (1) and second substrate (2). The first substrate (1) and second substrate (2) are bonded together mechanically by means of a bonding agent (4) arranged in a sheet between the first substrate (1) and the second substrate (2), which bonding agent contains a glass and surrounds the element (3) with the organic material in the manner of a frame.

Abstract: Production of an organic optoelectronic component comprising the following steps: A) providing a first substrate (1) having an active region (12) and a first connection region (11) surrounding said active region (12), wherein an organic, functional layer sequence (3) is formed in said active region (12), B) providing a second substrate (2) having a cover region (22) and a second connection region (21) surrounding said cover region (22), C) applying a first connection layer (4) made from a first glass solder material directly to said second substrate (2) in said second connection region (21), D) vitrifying (91) said first glass solder material of said first connection layer (4), E) applying a second connection layer (5) to said vitrified first connection layer (4) or to said first connection region (11) of said first substrate (1) and F) connecting said first substrate (1) to said second substrate (2) such that said second connection layer (5) connects said first connection region (11) to said first connection

Abstract: An optoelectronic component having a substrate (1), an anode (2) and a cathode (10) and at least one active layer (6) disposed between the anode and the cathode. An amorphous dielectric layer (3) which contains or consists of a metal oxide, a metal nitride or a metal oxynitride is disposed directly on the cathode-side surface of the anode. The metal contained in the metal oxide, metal nitride or metal oxynitride is selected from one or several of the metals of the group consisting of aluminium, gallium, titanium, zirconium, hafnium, tantalum, lanthanum and zinc.

Abstract: An organic, optoelectronic component (10) is specified, comprising a three-dimensional substrate body (1), which has a closed substrate surface (1a), a radiation-emitting layer sequence (2), which has at least one layer (2a, 2b, 2c, 2d, 2e), containing an organic material, wherein the radiation-emitting layer sequence (2) is applied to the closed substrate surface (1a) and forms a curved area.

Abstract: A method for encapsulating an optoelectronic component by depositing a diffusion barrier for protection against environmental influences by means of an atmospheric pressure plasma on at least one subarea of the surface of the optoelectronic component.

Abstract: A radiation-emitting device is provided which comprises a substrate (10), at least one organic functional layer (100) on the substrate (10) and a second electrode (80) on the at least one organic functional layer (100). The substrate (10) includes a plastics film (1) and a metal film (3), and the metal film (3) is arranged between the plastics film (1) and the at least one organic functional layer (100) and is set up as a first electrode. A method is additionally provided for producing such a device.

Abstract: A method for producing an electronic component comprising barrier layers for the encapsulation of the component comprises, in particular, the following steps: providing a substrate (1) with at least one functional layer (22), applying at least one first barrier layer (3) on the functional layer (22) by means of plasma-enhanced atomic layer deposition (PEALD), and applying at least one second barrier layer (4) on the functional layer (22) by means of plasma-enhanced chemical vapor deposition (PECVD).

Abstract: A method for producing an electronic component comprising barrier layers for the encapsulation of the component comprises, in particular, the following steps: providing a substrate (1) with at least one functional layer (22), applying at least one first barrier layer (3) on the functional layer (22) by means of plasmaless atomic layer deposition (PLALD), and applying at least one second barrier layer (4) on the functional layer (22) by means of plasma-enhanced chemical v0apor deposition (PECVD).

Abstract: A device in accordance with one embodiment comprises a component (1) and an encapsulation arrangement (2) for the encapsulation of the component (1) with respect to moisture and/or oxygen, wherein the encapsulation arrangement (2) has a first layer (21) and thereabove a second layer (22) on at least one surface (19) of the component (1), the first layer (21) and the second layer (22) each comprise an inorganic material, and the second layer (22) is arranged directly on the first layer (21).

Abstract: A radiation-emitting device with a first electrode, a first emission layer, a second emission layer and a second electrode. The invention additionally relates to a method of producing a radiation-emitting device.

Abstract: An electroluminescent organic semiconductor element includes a substrate and a first electrode arranged on the substrate. The semiconductor element additionally contains a second electrode and at least one organic layer, which is arranged between the first electrode and the second electrode. The organic layer is a layer that generates light by recombination of charge carriers. At least one of the first and the second electrode contains a highly conductive organic sublayer.

Abstract: The dielectric composition contains a mixture of a ceramic composition containing BaaREbTicO3, wherein RE represents a rare earth element, with 0.05?a?0.25, 0.525?b?0.70, 0.85?c?1.0, and 2a+3b+4c=6, and free from lead and bismuth, a glass composition, and a metal oxide. The glass composition preferably contains ZnO or MgO, SiO2, and at least 10% by weight of Li2O or TiO2. Preferably, the alkaline earth metal oxide is MgO. By preference, the glass composition essentially consists of 50–80% weight of SiO2, 5–25% weight of MgO, and optionally another alkaline earth metal oxide, and 10–25% by weight of Li2O, and is substantially free from boron. The dielectric composition can be sintered in the presence of Cu electrodes at a temperature below the melting point of Cu so as to manufacture an electronic device such as a ceramic multilayer element. After sintering, the dielectric composition has a relative dielectric constant of at least 55.

Abstract: The invention relates to an array of ultrasound transducers which each comprise a substrate (1), a membrane (2), a first electrode (4), a piezoelectric layer (5), and a second electrode (6), wherein the substrate (1) comprises at least one opening (3) which adjoins the membrane (2) at one side, while the piezoelectric layer (5) has a high piezoelectric coupling coefficient k and is textured. The invention further relates to an ultrasound transducer and to a method of manufacturing an array of ultrasound transducers.

Abstract: The dielectric composition contains a mixture of a ceramic composition containing BaaREbTicO3, wherein RE represents a rare earth element, with 0.05?a?0.25, 0.525?b?0.70, 0.85?c?1.0, and 2a+3b+4c=6, and free from lead and bismuth, a glass composition, and a metal oxide. The glass composition preferably contains ZnO or MgO, SiO2, and at least 10% by weight of Li2O or TiO2. Preferably, the alkaline earth metal oxide is MgO. By preference, the glass composition essentially consists of 50-80% weight of SiO2, 5-25% weight of MgO, and optionally another alkaline earth metal oxide, and 10-25% by weight of Li2O, and is substantially free from boron. The dielectric composition can be sintered in the presence of Cu electrodes at a temperature below the melting point of Cu so as to manufacture an electronic device such as a ceramic multilayer element. After sintering, the dielectric composition has a relative dielectric constant of at least 55.