Abstract: A system may include a support configured to rotatably support a wafer. The system may also include an imager for generating an image of a wafer, where the image includes a first coordinate reference. The system may also include a profiler for generating a profile of the wafer, where the profile includes a second coordinate reference. The system may further include control programming for locating at least one structural feature of an edge of the wafer recognizable by both the imager and the profiler for allowing the first coordinate reference to be mapped to the second coordinate reference. The wafer used in calibration may have discrete edge features detectable in an edge imager and in an edge profiler.

Abstract: A system may include a support configured to rotatably support a wafer. The system may also include an imager for generating an image of a wafer, where the image includes a first coordinate reference. The system may also include a profiler for generating a profile of the wafer, where the profile includes a second coordinate reference. The system may further include control programming for locating at least one structural feature of an edge of the wafer recognizable by both the imager and the profiler for allowing the first coordinate reference to be mapped to the second coordinate reference. The wafer used in calibration may have discrete edge features detectable in an edge imager and in an edge profiler.

Abstract: A photomask and reticle inspection method and apparatus wherein a selected surface area of an object is inspected and a first stream of data having signal values representing the image content of each pixel thereof is generated, a second stream of data having signal values representing the intended image content of each pixel of the first stream of data is generated, corresponding portions of the first and second streams of data are stored in memory, any misalignment between the stored portions of the first and second streams of data is detected, the misaligned first and second portions of data are then aligned using shifts of an integral number of pixels and/or subpixel interpolation to correct the detected misalignment therebetween, corresponding subportions of the stored and aligned first and second portions of data are then compared to detect difference therebetween, and upon detecting a difference exceeding a predetermined threshold, the presence of a defect at a particular pixel location on the inspecte

Abstract: A process and apparatus for qualifying a reticle, master pattern, or the like, in-situ as it is used in a system for photolithographically creating an image on a substrate, including the steps of coating a transparent substrate with a layer of transparent photoresist material, placing the coated substrate with a layer of transparent photoresist material, placing the coated substrate on a substrate supporting means, using a source of illumination in combination with a reticle, or master pattern, to create an image of the reticle, or master pattern, on the substrate, thereby exposing the photo resist coated on the surface thereof, removing the substrate from the supporting means, developing the exposed photoresist to produce a transparent patterned mask on the surface of the substrate, said patterned mask corresponding to the pattern on the reticle, or master pattern, and, in combination with the substrate, forming a monitor object, inspecting the monitor object by passing light through both the transparent mas

Abstract: Defect detection apparatus including a mechanical and optical system for scanning duplicate areas of a photomask to be inspected, electronic means for converting the optically scanned information to digitized form, memory for storing such information, and means for comparing information obtained from one inspected area to the other inspected area to determine differences therebetween, such differences being classified as defects. The detection is accomplished using a vector gradient within a matrix technique to develop candidate and cancellor information which is then logically manipulated to qualify the data obtained from each pixel matrix and then, after qualification, is used to determine whether or not a defect has been detected. The subject invention has particular application to the detection of defects occurring at pattern corners within the inspected photomask and is specifically directed to overcoming difficulties previously encountered in detecting such defects.