Abstract: A semiconductor wafer comprising single-crystal silicon has defined concentrations of oxygen, nitrogen and hydrogen; the semiconductor wafer further comprises: BMD seeds having a density averaged over the radius of not less than 1×105 cm?3 and not more than 1×107 cm?3; surface defects having a density averaged over the radius of not less than 1100 cm?2; and BMDs, whose density is not lower than a lower limit of 5×108/cm3. The semiconductor wafers are produced by a process which enables obtention of the required ranges of concentrations of oxygen, nitrogen, hydrogen, BMD seeds, and BMD's.

Abstract: Epitaxial wafers with a high concentration of BMD nuclei or developed BMDs just below a denuded zone, and having low surface roughness, are produced by forming an oxynitride layer on a purposefully oxidized epitaxial layer by a short RTA treatment in a nitriding atmosphere, removing the oxynitride layer, and then polishing the epitaxial surface.

Abstract: A control pad displayed on a touchscreen of a touchscreen device can be used by a user to control or manipulate characters, objects, or entities within a game environment. In some embodiments, the control pad is activated and displayed at a location of the touchscreen based at least in part on a touch signal location within a defined partition of the touchscreen. In response to the touch signal being moved within the boundary of the control pad, an action or manipulation of the game environment may be performed based at least in part on the location of the touch signal relative to the control pad. In some embodiments, if the touch signal is moved outside the boundary of the control pad, the position of the control pad is adjusted such that the location of the touch signal remains on or within the boundary of the control pad.

Abstract: Computed tomography apparatus for odontology, which includes an arm part arranged to be turnable, to which arm part at a distance from each other a radiation source and a receiver of image information have been arranged, in which apparatus said arm part is arranged to locate or to be transferred to such location with respect to the volume desired to be imaged that when the arm part is turned during the imaging, at least over a substantial angular range only a portion of the volume arranged to become imaged is within the radiation beam, and in which the control system of the apparatus comprises a control routine which then controls said radiation source to generate radiation as pulsed.

Abstract: The invention relates to a semiconductor wafer of monocrystalline silicon, and to a method for producing it. The semiconductor wafer has a zone, DZ, which is free of BMD defects and extends from a front side of the semiconductor wafer into the bulk of the semiconductor wafer, and a region having BMD defects which extends from the DZ further into the bulk of the semiconductor wafer. A silicon single crystal is pulled by the Czochralski method and processed to form a polished monocrystalline silicon substrate wafer. The substrate wafer is treated by rapidly heating and cooling the substrate wafer, slowly heating the rapidly heated and cooled substrate wafer, and keeping the substrate wafer at a specific temperature and over a specific period.

Abstract: The invention relates to a semiconductor wafer of monocrystalline silicon, and to a method for producing it. The semiconductor wafer has a zone, DZ, which is free of BMD defects and extends from a front side of the semiconductor wafer into the bulk of the semiconductor wafer, and a region having BMD defects which extends from the DZ further into the bulk of the semiconductor wafer. A silicon single crystal is pulled by the Czochralski method and processed to form a polished monocrystalline silicon substrate wafer. The substrate wafer is treated by rapidly heating and cooling the substrate wafer, slowly heating the rapidly heated and cooled substrate wafer, and keeping the substrate wafer at a specific temperature and over a specific period.

Abstract: The invention relates to a computed tomography apparatus designed for dental use, which includes a first arm part supporting imaging means and arranged turnable by means of an actuator, and a second arm part supporting the first arm part and arranged turnable by means of an actuator. The actuators are arranged controllable such that, during the imaging process, said first arm part does not rotate but remains in its place in relation to said second arm part and said second arm part rotates about its rotation axis.

Abstract: Monocrystalline silicon semiconductor wafers have a front side and a rear side, and a denuded zone which extends from the front side to the rear side as far as a depth which between a center and an edge of the semiconductor wafer on average is not less than 8 ?m and not more than 18 ?m, and having a region adjoining the denuded zone having BMDs whose density at a distance of 30 ?m from the front side is not less than 2×109 cm?3. The semiconductor wafers are produced by a method comprising providing a substrate wafer of monocrystalline silicon and an RTA treating the substrate wafer, the treatment subdivided into a first thermal treatment of the substrate wafer in an atmosphere consisting of argon and into a second thermal treatment of the substrate wafer in an atmosphere consisting of argon and ammonia.

Abstract: Monocrystalline silicon semiconductor wafers have a front side and a rear side, and a denuded zone which extends from the front side to the rear side as far as a depth which between a center and an edge of the semiconductor wafer on average is not less than 8 ?m and not more than 18 ?m, and having a region adjoining the denuded zone having BMDs whose density at a distance of 30 ?m from the front side is not less than 2×109 cm?3. The semiconductor wafers are produced by a method comprising providing a substrate wafer of monocrystalline silicon and an RTA treating the substrate wafer, the treatment subdivided into a first thermal treatment of the substrate wafer in an atmosphere consisting of argon and into a second thermal treatment of the substrate wafer in an atmosphere consisting of argon and ammonia.

Abstract: A system for controlling a turn signal for a motor vehicle is disclosed to detect lane changes of the motor vehicle. The system includes a control device which acquires information provided by an environment sensor, and controls the turn signal as a function of a lane change status.

Abstract: An integrated dental care apparatus includes a patient chair and a dental care unit. The dental care unit is mounted on a floor while the dental care unit and the patient chair are structurally connected by a structure which supports the patient chair. Both the dental care unit and the patient chair have means for enabling them to be turned in relation to a vertical axis.

Abstract: A method is provided for sending an electronic distress call from a motor vehicle involved in an accident, in which the distress call can be sent by utilizing short-range radio data transmission and received by conventional mobile terminals in the vicinity of the accident site. The electronic distress call is triggered with an acceleration signal and/or with the activation signal of a safety system. An apparatus and a control unit are provided for sending a distress call from a vehicle involved in an accident.

Abstract: A method is provided for warning a following motor vehicle through a motor vehicle travelling ahead, in which a distance between the motor vehicle travelling ahead and the motor vehicle following is measured and compared with a safety distance, which is dependent on a travelled speed of the motor vehicle travelling ahead and when the measured distance undershoots this safety distance, a warning signal is emitted by the motor vehicle travelling ahead to the following motor vehicle. An apparatus is also provided for warning a following motor vehicle through a motor vehicle travelling ahead.

Abstract: The invention relates to a semiconductor wafer of monocrystalline silicon, and to a method for producing it. The semiconductor wafer has a zone, DZ, which is free of BMD defects and extends from a front side of the semiconductor wafer into the bulk of the semiconductor wafer, and a region having BMD defects which extends from the DZ further into the bulk of the semiconductor wafer. A silicon single crystal is pulled by the Czochralski method and processed to form a polished monocrystalline silicon substrate wafer. The substrate wafer is treated by rapidly heating and cooling the substrate wafer, slowly heating the rapidly heated and cooled substrate wafer, and keeping the substrate wafer at a specific temperature and over a specific period.

Abstract: Semiconductor wafers composed of monocrystalline silicon and doped with nitrogen contain an OSF region and a Pv region, wherein the OSF region extends from the center radially toward the edge of the wafer as far as the Pv region; the wafer has an OSF density of less than 10 cm?2, a BMD density in the bulk of at least 3.5×108 cm?3, and a radial distribution of the BMD density with a fluctuation range BMDmax/BMDmin of not more than 3. The wafers are produced by controlling initial nitrogen content and maintaining oxygen within a narrow window, followed by a heat treatment.

Abstract: The invention relates to a computed tomography apparatus designed for dental use, which includes a first arm part supporting imaging means and arranged turnable by means of an actuator, and a second arm part supporting the first arm part and arranged turnable by means of an actuator. The actuators are arranged controllable such that, during the imaging process, said first arm part does not rotate but remains in its place in relation to said second arm part and said second arm part rotates about its rotation axis.

Abstract: Computed tomography apparatus for odontology, which includes an arm part arranged to be turnable, to which arm part at a distance from each other a radiation source and a receiver of image information have been arranged, in which apparatus said arm part is arranged to locate or to be transferred to such location with respect to the volume desired to be imaged that when the arm part is turned during the imaging, at least over a substantial angular range only a portion of the volume arranged to become imaged is within the radiation beam, and in which the control system of the apparatus comprises a control routine which then controls said radiation source to generate radiation as pulsed.

Abstract: The epitaxial layer defects generated from voids of a silicon substrate wafer containing added hydrogen are suppressed by a method for producing an epitaxial wafer by: growing a silicon crystal by the Czochralski method comprising adding hydrogen and nitrogen to a silicon melt and growing from the silicon melt a silicon crystal having a nitrogen concentration of from 3×1013 cm?3 to 3×1014 cm?3, preparing a silicon substrate by machining the silicon crystal, and forming an epitaxial layer at the surface of the silicon substrate.

Abstract: The present invention relates to limiting an x-ray beam used in connection with dental extra oral imaging by a plate mechanism (1) arranged to be operated by a drive mechanism including an actuator (3) arranged to move at least one plate element (2, 3) comprised in the mechanism (1). The plate mechanism (1) includes at least a first and a second plate element (2, 3) which include at least a first slot (12) and a second slot (13), respectively, and said drive mechanism is arranged to directly or indirectly move said first plate element (2) independently of location of said second plate element (3) and said second plate element (3) is arranged to be moved as dependent on the movements of said first plate element (2) only.

Abstract: A panoramic X-ray apparatus, comprising at least a support element (2), a patient support (9) arranged to be movable in a vertical direction and an imaging station (4a). The panoramic X-ray apparatus has a support structure (4) arranged to support at least the imaging station (4a), and it has an actuator (15) producing a vertical linear motion for moving at least the imaging station (4a) to different height positions. The panoramic X-ray apparatus comprises a transmission mechanism (28) which affects the velocity/travel distance of the vertical movement of the imaging station (4a) and which is connected at least to the actuator (15) and either to the aforesaid support structure (4) or to the aforesaid support element in such manner that the velocity/travel distance of the vertical movement of the imaging station (4a) is substantially greater than the velocity/travel distance of the motion imparted by the actuator (15) to the transmission mechanism (28).