Abstract: Methods for producing a photomask or layer or stack patterning include applying two resists to a layer, a layer stack, or a mask substrate (collectively “the layer”). Sensitivity of the first resist with respect to the exposure dose is greater than sensitivity of the second. Both resists are subjected to an exposure dose in defined regions of the layer surface, the dose varying locally between first and second doses. The first dose is chosen to expose the first resist but not the second. The second dose is chosen to expose the second resist. After a first development of the second and of the first resist the layer is etched at the uncovered locations for a first time. After complete removal of the second resist and a second development of the first resist, the layer is etched. As a result, it is possible to produce structures of different depths in the layer.

Abstract: Methods for producing a photomask or layer or stack patterning include applying two resists to a layer, a layer stack, or a mask substrate (collectively “the layer”). Sensitivity of the first resist with respect to the exposure dose is greater than sensitivity of the second. Both resists are subjected to an exposure dose in defined regions of the layer surface, the dose varying locally between first and second doses. The first dose is chosen to expose the first resist but not the second. The second dose is chosen to expose the second resist. After a first development of the second and of the first resist the layer is etched at the uncovered locations for a first time. After complete removal of the second resist and a second development of the first resist, the layer is etched. As a result, it is possible to produce structures of different depths in the layer.

Abstract: A method for adjusting (aligning) a multilevel phase-shifting mask or a multilevel phase-shifting reticle with the aid of at least one alignment mark provided on the mask or the reticle includes the steps of applying or introducing at least two alignment marks onto or into the substrate of the mask or of the reticle in a first step before the first exposure step of the mask or of the reticle, in a second step, coating at least the alignment marks produced in the first step and the regions immediately surrounding them with a thin conducting layer, and, for all following alignment steps of the plurality of mask levels, raster-scanning these alignment marks applied in the first step with an uncharged or charged particle or photon beam.

Abstract: A method for adjusting (aligning) a multilevel phase-shifting mask or a multilevel phase-shifting reticle with the aid of at least one alignment mark provided on the mask or the reticle includes the steps of applying or introducing at least two alignment marks onto or into the substrate of the mask or of the reticle in a first step before the first exposure step of the mask or of the reticle, in a second step, coating at least the alignment marks produced in the first step and the regions immediately surrounding them with a thin conducting layer, and, for all following alignment steps of the plurality of mask levels, raster-scanning these alignment marks applied in the first step with an uncharged or charged particle or photon beam.