Abstract: Lanthanum strontium manganate (La0.67Sro0.33MnO3, i.e., LSMO)/lanthanum manganate (LaMnO3, i.e., LMO) perovskite oxide metal/semiconductor superlattices were investigated for potential p-type thermoelectric applications. Growth optimizations were performed using pulsed laser deposition to achieve epitaxial superlattices of LSMO (metal)/LMO (p-type semiconductor) on strontium titanate (STO) substrates. The cross-plane Seebeck coefficient of the thermoelectric superlattice measured between the substrate and the capping layer has a value of at least 1600 ?V/K measured at about 300K.

Abstract: Lanthanum strontium manganate (La0.67Sr0.33MnO3, i.e., LSMO)/lanthanum manganate (LaMnO3, i.e., LMO) perovskite oxide metal/semiconductor superlattices were investigated for potential p-type thermoelectric applications. Growth optimizations were performed using pulsed laser deposition to achieve epitaxial superlattices of LSMO (metal)/LMO (p-type semiconductor) on strontium titanate (STO) substrates. The cross-plane Seebeck coefficient of the thermoelectric superlattice measured between the substrate and the capping layer has a value of at least 1600 ?V/K measured at about 300K.

Abstract: One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

Abstract: In one embodiment, SWNTs are synthesized from an embedded catalyst in a modified porous anodic alumina (PAA) template. Pd is electrodeposited into the template to form nanowires that grow from an underlying conductive layer beneath the PAA and extend to the initiation sites of the SWNTs within each pore. Individual vertical channels of SWNTs are created, each with a vertical Pd nanowire back contact. Further Pd deposition results in annular Pd nanoparticles that form on portions of SWNTs extending onto the PAA surface. Two-terminal electrical characteristics produce linear I-V relationships, indicating ohmic contact in the devices.

Abstract: A titanium nitride-based metamaterial, and method for producing the same, is disclosed, consisting of ultrathin, smooth, and alternating layers of a plasmonic titanium nitride (TiN) material and a dielectric material, grown on a substrate to form a superlattice. The dielectric material is made of A1-xScxN, where ‘x’ ranges in value from 0.2 to 0.4. The layers of alternating material have sharp interfaces, and each layer can range from 1-20 nanometers in thickness. Metamaterials based on titanium TiN, a novel plasmonic building block, have many applications including, but not ‘limited to emission enhancers, computer security, etc. The use of nitrogen vacancy centers in diamond, and light emitting diode (LED) efficiency enhancement is of particular interest.

Abstract: Methods and apparatus for an electronic device such as a field effect transistor. One embodiment includes fabrication of an FET utilizing single walled carbon nanotubes as the semiconducting material. In one embodiment, the FETs are vertical arrangements of SWCNTs, and in some embodiments prepared within porous anodic alumina (PAA). Various embodiments pertain to different methods for fabricating the drains, sources, and gates.

Abstract: Methods for fabricating a nanowire array epoxy composite with high structural integrity and low effective thermal conductivity to achieve a power conversion efficiency goal of approximately 20% and power density of about 104 W/m2 with a maximum temperature below about 380° C. Further, a method includes fabricating a self-supporting thick 3-D interconnected nanowire array with high structural integrity and low effective thermal conductivity to achieve a power conversion efficiency goal of 20% and power density of about 104 W/m2 with a maximum temperature of about 700° C., the nanowire array having substantially only air between nanowires.

Abstract: Lanthanum strontium manganate (La0.67Sr0.33Mn03, i.e., LSMO)/lanthanum manganate (LaMn03, i.e., LMO) perovskite oxide metal/semiconductor superlattices were investigated for potential p-type thermoelectric applications. Growth optimizations were performed using pulsed laser deposition to achieve epitaxial superlattices of LSMO (metal)/LMO (p-type semiconductor) on strontium titanate (STO) substrates. In-plane Seebeck results validated the p-type semiconducting and metallic behavior in LMO and LSMO thin films, respectively. Thermal conductivity measurements via the photo-acoustic (PA) technique showed that LSMO/LMO superlattices exhibit a room temperature cross-plane thermal conductivity (0.89 W/m·K) that is significantly lower than the thermal conductivity of individual thin films of either LSMO (1.60 W/m·K) or LMO (1.29 W/m·K).

Abstract: Methods and apparatus for an electronic device such as a field effect transistor. One embodiment includes fabrication of an FET utilizing single walled carbon nanotubes as the semiconducting material. In one embodiment, the FETs are vertical arrangements of SWCNTs, and in some embodiments prepared within porous anodic alumina (PAA). Various embodiments pertain to different methods for fabricating the drains, sources, and gates.

Abstract: One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

Abstract: One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

Abstract: Methods for fabricating a nanowire array epoxy composite with high structural integrity and low effective thermal conductivity to achieve a power conversion efficiency goal of approximately 20% and power density of about 104 W/m2 with a maximum temperature below about 380° C. Further, a method includes fabricating a self-supporting thick 3-D interconnected nanowire array with high structural integrity and low effective thermal conductivity to achieve a power conversion efficiency goal of 20% and power density of about 104 W/m2 with a maximum temperature of about 700° C., the nanowire array having substantially only air between nanowires.

Abstract: In one embodiment, SWNTs are synthesized from an embedded catalyst in a modified porous anodic alumina (PAA) template. Pd is electrodeposited into the template to form nanowires that grow from an underlying conductive layer beneath the PAA and extend to the initiation sites of the SWNTs within each pore. Individual vertical channels of SWNTs are created, each with a vertical Pd nanowire back contact. Further Pd deposition results in annular Pd nanoparticles that form on portions of SWNTs extending onto the PAA surface. Two-terminal electrical characteristics produce linear I-V relationships, indicating ohmic contact in the devices.

Abstract: One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

Abstract: One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

Abstract: In one embodiment, SWNTs are synthesized from an embedded catalyst in a modified porous anodic alumina (PAA) template. Pd is electrodeposited into the template to form nanowires that grow from an underlying conductive layer beneath the PAA and extend to the initiation sites of the SWNTs within each pore. Individual vertical channels of SWNTs are created, each with a vertical Pd nanowire back contact. Further Pd deposition results in annular Pd nanoparticles that form on portions of SWNTs extending onto the PAA surface. Two-terminal electrical characteristics produce linear I-V relationships, indicating ohmic contact in the devices.

Abstract: The present invention relates to a functionally integrated microanalytical system for performing fluorescence spectroscopy. A source of fluorescence-exciting radiation, typically a LED, is integrated onto a substrate along with a photodetector and, in some embodiments, an optical filter. A pixel-to-point laser lift-off process is used to effect this component integration. For those cases in which a filter is required, a thin film bandgap filter is typically used, such as CdS or CdSxSe1-x (0<x<1). A disposable microchannel containing the sample and its fluorescent tag is mounted onto the integrated assembly of LED, photodetector and (optionally) filter. This configuration of components allows the microchannel and sample to be readily removed and replaced, facilitating rapid analysis of multiple samples. Multiple LEDS, detectors and filters (if present) can also be integrated onto the same substrate, permitting multiple wavelength analysis of the sample to be performed concurrently.

Abstract: One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

Abstract: One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

Abstract: One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).