Patents by Inventor Timothy E. Glassman
Timothy E. Glassman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11489112Abstract: An apparatus, includes an interconnect, including a conductive material, above a substrate and a resistive random access memory (RRAM) device coupled to the interconnect. The RRAM device includes an electrode structure above the interconnect, where an upper portion of the electrode structure has a first width. The RRAM device further includes a switching layer on the electrode structure, where the switching layer has the first width and an oxygen exchange layer, having a second width less than the first width, on a portion of the switching layer. The RRAM device further includes a top electrode above the oxygen exchange layer, where the top electrode has the second width and an encapsulation layer on a portion of the switching layer, where the switching layer extends along a sidewall of the oxygen exchange layer.Type: GrantFiled: September 28, 2017Date of Patent: November 1, 2022Assignee: INTEL CORPORATIONInventors: Namrata S. Asuri, Oleg Golonzka, Nathan Strutt, Patrick J. Hentges, Trinh T. Van, Hiten Kothari, Ameya S. Chaudhari, Matthew J. Andrus, Timothy E. Glassman, Dragos Seghete, Christopher J. Wiegand, Daniel G. Ouellette
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Patent number: 11342499Abstract: Approaches for fabricating RRAM stacks with reduced forming voltage, and the resulting structures and devices, are described. In an example, a resistive random access memory (RRAM) device includes a conductive interconnect in an inter-layer dielectric (ILD) layer above a substrate. An RRAM element is on the conductive interconnect, the RRAM element including a first electrode layer on the uppermost surface of the conductive interconnect. A resistance switching layer is on the first electrode layer, the resistance switching layer including a first metal oxide material layer on the first electrode layer, and a second metal oxide material layer on the first metal oxide material layer, the second metal oxide material layer including a metal species not included in the first metal oxide material layer. An oxygen exchange layer is on the second metal oxide material layer of the resistance switching layer. A second electrode layer is on the oxygen exchange layer.Type: GrantFiled: September 18, 2017Date of Patent: May 24, 2022Assignee: Intel CorporationInventors: Timothy E. Glassman, Dragos Seghete, Nathan Strutt, Namrata S. Asuri, Oleg Golonzka
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Publication number: 20200203602Abstract: An apparatus, includes an interconnect, including a conductive material, above a substrate and a resistive random access memory (RRAM) device coupled to the interconnect. The RRAM device includes an electrode structure above the interconnect, where an upper portion of the electrode structure has a first width. The RRAM device further includes a switching layer on the electrode structure, where the switching layer has the first width and an oxygen exchange layer, having a second width less than the first width, on a portion of the switching layer. The RRAM device further includes a top electrode above the oxygen exchange layer, where the top electrode has the second width and an encapsulation layer on a portion of the switching layer, where the switching layer extends along a sidewall of the oxygen exchange layer.Type: ApplicationFiled: September 28, 2017Publication date: June 25, 2020Applicant: INTEL CORPORATIONInventors: Namrata S. Asuri, Oleg Golonzka, Nathan Strutt, Patrick J. Hentges, Trinh T. Van, Hiten Kothari, Ameya S. Chaudhari, Matthew J. Andrus, Timothy E. Glassman, Dragos Seghete, Christopher J. Wiegand, Daniel G. Ouellette
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Publication number: 20200144496Abstract: Approaches for fabricating RRAM stacks with reduced forming voltage, and the resulting structures and devices, are described. In an example, a resistive random access memory (RRAM) device includes a conductive interconnect in an inter-layer dielectric (ILD) layer above a substrate. An RRAM element is on the conductive interconnect, the RRAM element including a first electrode layer on the uppermost surface of the conductive interconnect. A resistance switching layer is on the first electrode layer, the resistance switching layer including a first metal oxide material layer on the first electrode layer, and a second metal oxide material layer on the first metal oxide material layer, the second metal oxide material layer including a metal species not included in the first metal oxide material layer. An oxygen exchange layer is on the second metal oxide material layer of the resistance switching layer. A second electrode layer is on the oxygen exchange layer.Type: ApplicationFiled: September 18, 2017Publication date: May 7, 2020Inventors: Timothy E. GLASSMAN, Dragos SEGHETE, Nathan STRUTT, Namrata S. ASURI, Oleg GOLONZKA
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Publication number: 20180130707Abstract: Bottom-up fill approaches for forming metal features of semiconductor structures, and the resulting structures, are described. In an example, a semiconductor structure includes a trench disposed in an inter-layer dielectric (ILD) layer. The trench has sidewalls, a bottom and a top. A U-shaped metal seed layer is disposed at the bottom of the trench and along the sidewalls of the trench but substantially below the top of the trench. A metal fill layer is disposed on the U-shaped metal seed layer and fills the trench to the top of the trench. The metal fill layer is in direct contact with dielectric material of the ILD layer along portions of the sidewalls of the trench above the U-shaped metal seed layer.Type: ApplicationFiled: June 18, 2015Publication date: May 10, 2018Inventors: Scott B. CLENDENNING, Martin M. MITAN, Timothy E. GLASSMAN, Flavio GRIGGIO, Grant M. KLOSTER, Kent N. FRASURE, Florian GSTREIN, Rami HOURANI
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Patent number: 9691839Abstract: Metal-insulator-metal (MIM) capacitors with insulator stacks having a plurality of metal oxide layers are described. For example, a MIM capacitor for a semiconductor device includes a trench disposed in a dielectric layer disposed above a substrate. A first metal plate is disposed along the bottom and sidewalls of the trench. An insulator stack is disposed above and conformal with the first metal plate. The insulator stack includes a first metal oxide layer having a first dielectric constant and a second metal oxide layer having a second dielectric constant. The first dielectric constant is higher than the second dielectric constant. The MIM capacitor also includes a second metal plate disposed above and conformal with the insulator stack.Type: GrantFiled: December 14, 2011Date of Patent: June 27, 2017Assignee: Intel CorporationInventors: Nick Lindert, Timothy E. Glassman, Andre Baran
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Publication number: 20140001598Abstract: Atomic layer deposition (ALD) of TaAlC for capacitor integration is generally described. For example, a semiconductor structure includes a plurality of semiconductor devices disposed in or above a substrate. One or more dielectric layers are disposed above the plurality of semiconductor devices. A metal-insulator-metal (MIM) capacitor is disposed in at least one of the dielectric layers, the MIM capacitor includes an electrode having a conformal layer of TaAlC and the MIM capacitor is electrically coupled to one or more of the semiconductor devices. Other embodiments are also disclosed and claimed.Type: ApplicationFiled: December 21, 2011Publication date: January 2, 2014Inventors: Nick Lindert, Ruth A. Brain, Joseph M. Steigerwald, Timothy E. Glassman, Andre Baran
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Publication number: 20130270676Abstract: Metal-insulator-metal (MIM) capacitors with insulator stacks having a plurality of metal oxide layers are described. For example, a MIM capacitor for a semiconductor device includes a trench disposed in a dielectric layer disposed above a substrate. A first metal plate is disposed along the bottom and sidewalls of the trench. An insulator stack is disposed above and conformal with the first metal plate. The insulator stack includes a first metal oxide layer having a first dielectric constant and a second metal oxide layer having a second dielectric constant. The first dielectric constant is higher than the second dielectric constant. The MIM capacitor also includes a second metal plate disposed above and conformal with the insulator stack.Type: ApplicationFiled: December 14, 2011Publication date: October 17, 2013Inventors: Nick Lindert, Timothy E. Glassman, Andre Baran
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Patent number: 8441097Abstract: Methods to form memory devices having a MIM capacitor with a recessed electrode are described. In one embodiment, a method of forming a MIM capacitor with a recessed electrode includes forming an excavated feature defined by a lower portion that forms a bottom and an upper portion that forms sidewalls of the excavated feature. The method includes depositing a lower electrode layer in the feature, depositing an electrically insulating layer on the lower electrode layer, and depositing an upper electrode layer on the electrically insulating layer to form the MIM capacitor. The method includes removing an upper portion of the MIM capacitor to expose an upper surface of the electrode layers and then selectively etching one of the electrode layers to recess one of the electrode layers. This recess isolates the electrodes from each other and reduces the likelihood of a current leakage path between the electrodes.Type: GrantFiled: December 23, 2009Date of Patent: May 14, 2013Assignee: Intel CorporationInventors: Joseph M. Steigerwald, Nick Lindert, Steven J. Keating, Christopher J. Jezewski, Timothy E. Glassman
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Patent number: 8299286Abstract: A ?-diketonate alkoxide metal compound and a source reagent composition are provided. The ?-diketonate alkoxide metal compound may include a metal M selected from Mg, Ca, Sr, Ba, Sc, Y, La, Ce, Ti, Zr, Hf, Pr, V, Nb, Ta, Nd, Cr, W, Pm, Mn, Re, Sm, Fe, Ru, Eu, Co, Rh, Ir, Gd, Ni, Tb, Cu, Dy, Ho, Al, Tl, Er, Sn, Pb, Tm, Bi, Lu, Th, Pd, Pt, Ga, In, Au, Ag, Li, Na, K, Rb, Cs, Mo, and Yb. The metal may be complexed to at least one alkoxide ligand and one ?-diketonate ligand.Type: GrantFiled: December 4, 2007Date of Patent: October 30, 2012Assignee: Advanced Technology Materials, Inc.Inventors: Robin A. Gardiner, Thomas H. Baum, Douglas Cameron Gordon, Connie L. Gordon, legal representative, Timothy E. Glassman, Sofia Pombrik, Brian A. Vaartstra, Peter S. Kirlin
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Publication number: 20110171382Abstract: A metalorganic complex composition comprising a metalorganic complex selected from the group consisting of: metalorganic complexes comprising one or more metal central atoms coordinated to one or more monodentate or multidentate organic ligands, and complexed with one or more complexing monodentate or multidentate ligands containing one or more atoms independently selected from the group consisting of atoms of the elements C, N, H, S, O and F; wherein when the number of metal atoms is one and concurrently the number of complexing monodentate or multidentate ligands is one, then the complexing monodentate or multidentate ligand of the metalorganic complex is selected from the group consisting of beta-ketoiminates, beta-diiminates, C2-C10 alkenyl, C2-C15 cycloalkenyl and C6-C10 aryl.Type: ApplicationFiled: December 4, 2007Publication date: July 14, 2011Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.Inventors: Robin A. Gardiner, Peter S. Kirlin, Thomas H. Baum, Douglas Gordon, Connie L. Gordon, Timothy E. Glassman, Sophia Pombrik, Brian A. Vaarstra
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Publication number: 20110147851Abstract: A semiconductor device comprises a substrate, a channel region, and a gate formed in association with the channel region. In one exemplary embodiment, the gate comprises a first material that is formed void free on an interior surface of a gate trench of the gate. A width of the gate trench comprises between about 8 nm and about 65 nm. The gate comprises a transition metal alloyed with carbon, aluminum or nitrogen, or combinations thereof, to form a carbide, a nitride, or a carbo-nitride, or combinations thereof, of the transition metal. In another exemplary embodiment, the gate further comprises a second material formed void free on an interior surface of the first material and comprises a transition metal alloyed with carbon, aluminum or nitrogen, or combinations thereof, to form a carbide, a nitride, or a carbo-nitride, or combinations thereof, of the transition metal.Type: ApplicationFiled: December 18, 2009Publication date: June 23, 2011Inventors: Christopher D. Thomas, Joseph M. Steigerwald, Timothy E. Glassman, Kyoung H. Kim, Dan S. Lavric, Michael Ollinger, M. N. Perez-Paz
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Publication number: 20110147888Abstract: Methods to form memory devices having a MIM capacitor with a recessed electrode are described. In one embodiment, a method of forming a MIM capacitor with a recessed electrode includes forming an excavated feature defined by a lower portion that forms a bottom and an upper portion that forms sidewalls of the excavated feature. The method includes depositing a lower electrode layer in the feature, depositing an electrically insulating layer on the lower electrode layer, and depositing an upper electrode layer on the electrically insulating layer to form the MIM capacitor. The method includes removing an upper portion of the MIM capacitor to expose an upper surface of the electrode layers and then selectively etching one of the electrode layers to recess one of the electrode layers. This recess isolates the electrodes from each other and reduces the likelihood of a current leakage path between the electrodes.Type: ApplicationFiled: December 23, 2009Publication date: June 23, 2011Inventors: Joseph M. Steigerwald, Nick Lindert, Steven J. Keating, Christopher J. Jezewski, Timothy E. Glassman
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Patent number: 7323581Abstract: A metalorganic complex composition comprising a metalorganic complex selected from the group consisting of: metalorganic complexes comprising one or more metal central atoms coordinated to one or more monodentate or multidentate organic ligands, and complexed with one or more complexing monodentate or multidentate ligands containing one or more atoms independently selected from the group consisting of atoms of the elements C, N, H, S, O and F; wherein when the number of metal atoms is one and concurrently the number of complexing monodentate or multidentate ligands is one, then the complexing monodentate or multidentate ligand of the metalorganic complex is selected from the group consisting of beta-ketoiminates, beta-diiminates, C2-C10 alkenyl, C2-C15 cycloalkenyl and C6-C10 aryl.Type: GrantFiled: August 28, 2000Date of Patent: January 29, 2008Assignee: Advanced Technology Materials, Inc.Inventors: Robin A. Gardiner, Thomas H. Baum, Connie L. Gordon, legal representative, Timothy E. Glassman, Sophia Pombrik, Brian A. Vaastra, Peter S. Kirlin, Douglas Cameron Gordon, deceased
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Publication number: 20040180523Abstract: A method for making a semiconductor device is described. That method comprises forming a high-k gate dielectric layer on a substrate. After removing impurities from that layer, and increasing its oxygen content, a gate electrode is formed on the high-k gate dielectric layer.Type: ApplicationFiled: February 2, 2004Publication date: September 16, 2004Inventors: Justin K. Brask, Timothy E. Glassman, Mark L. Doczy, Matthew V. Metz
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Patent number: 6787440Abstract: A method for making a semiconductor device is described. That method comprises forming on a substrate a buffer layer and a high-k gate dielectric layer, oxidizing the surface of the high-k gate dielectric layer, and then forming a gate electrode on the oxidized high-k gate dielectric layer.Type: GrantFiled: December 10, 2002Date of Patent: September 7, 2004Assignee: Intel CorporationInventors: Christopher G. Parker, Markus Kuhn, Ying Zhou, Scott A. Hareland, Suman Datta, Nick Lindert, Robert S. Chau, Timothy E. Glassman, Matthew V. Metz, Sunit Tyagi
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Publication number: 20040110361Abstract: A method for making a semiconductor device is described. That method comprises forming on a substrate a buffer layer and a high-k gate dielectric layer, oxidizing the surface of the high-k gate dielectric layer, and then forming a gate electrode on the oxidized high-k gate dielectric layer.Type: ApplicationFiled: December 10, 2002Publication date: June 10, 2004Inventors: Christopher G. Parker, Markus Kuhn, Ying Zhou, Scott A. Hareland, Suman Datta, Nick Lindert, Robert S. Chau, Timothy E. Glassman, Matthew V. Metz, Sunit Tyagi
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Patent number: 6716707Abstract: A method for making a semiconductor device is described. That method comprises forming a high-k gate dielectric layer on a substrate. After removing impurities from that layer, and increasing its oxygen content, a gate electrode is formed on the high-k gate dielectric layer.Type: GrantFiled: March 11, 2003Date of Patent: April 6, 2004Assignee: Intel CorporationInventors: Justin K. Brask, Timothy E. Glassman, Mark L. Doczy, Matthew V. Metz
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Patent number: 6713358Abstract: A method for making a semiconductor device is described. That method comprises forming a high-k gate dielectric layer on a substrate. After forming a silicon nitride layer on the high-k gate dielectric layer, a gate electrode is formed on the silicon nitride layer.Type: GrantFiled: November 5, 2002Date of Patent: March 30, 2004Assignee: Intel CorporationInventors: Robert S. Chau, Timothy E. Glassman, Christopher G. Parker, Matthew V. Metz, Lawrence J. Foley, Reza Arghavani, Douglas W. Barlage
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Patent number: 6110529Abstract: A method of forming on a substrate a metal film, comprising depositing said metal film on said substrate via chemical vapor deposition from a metalorganic complex of the formula:MA.sub.Y Xwherein:M is a y-valent metal;A is a monodentate or multidentate organic ligand coordinated to M which allows complexing of MA.sub.y with X;y is an integer having a value of 2, 3 or 4; each of the A ligands may be the same or different; andX is a monodentate or multidentate ligand coordinated to M and containing one or more atoms independently selected from the group consisting of atoms of the elements C, N, H, S, O and F.The metal M may be selected from the group consisting of Cu, Ba, Sr, La, Nd, Ce, Pr, Sm, Eu, Th, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Bi, Tl, Y, Pb, Ni, Pd, Pt, Al, Ga, In, Ag, Au, Co, Rh, Ir, Fe, Ru, Sn, Li, Na, K, Rb, Cs, Ca, Mg, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, and W. A may be selected from the group consisting of .beta.-diketonates, .beta.Type: GrantFiled: June 7, 1995Date of Patent: August 29, 2000Inventors: Robin A. Gardiner, Peter S. Kirlin, Thomas H. Baum, Douglas Gordon, Timothy E. Glassman, Sofia Pombrik, Brian A. Vaartstra