Abstract: An electro-optic display includes a first light-transmissive electrode, a layer of an electro-optic medium capable of being switched between an open state and a closed state upon application of an electric field, a second light-transmissive electrode, and a layer having a plurality of retro-reflectors.

Abstract: An electro-optic display includes a first light-transmissive electrode, a layer of an electro-optic medium capable of being switched between an open state and a closed state upon application of an electric field, a second light-transmissive electrode, and a layer having a plurality of retro-reflectors.

Abstract: A method of forming air gaps within a solid structure is provided. In this method, a sacrificial material is covered by an overlayer. The sacrificial material is then removed through the overlayer to leave an air gap. Such air gaps are particularly useful as insulation between metal lines in an electronic device such as an electrical interconnect structure. Structures containing air gaps are also provided.

Abstract: The present invention provides new photoresist compositions that comprise a resin binder, a photoactive component, particularly an acid generator, and a dye material that contains one or more chromophores that can reduce undesired reflections of exposure radiation. Preferred dye compounds are polymeric materials that include one or more chromophores such as anthracene and other polycyclic moieties that effectively absorb deep UV exposure radiation.

Abstract: The present invention provides new photoresist compositions that comprise a resin binder, a photoactive component, particularly an acid generator, and a dye material that contains one or more chromophores that can reduce undesired reflections of exposure radiation. Preferred dye compounds are polymeric materials that include one or more chromophores such as anthracene and other polycyclic moieties that effectively absorb deep UV exposure radiation.

Abstract: A method of forming air gaps within a solid structure is provided. In this method, a sacrificial material is covered by an overlayer. The sacrificial material is then removed through the overlayer to leave an air gap. Such air gaps are particularly useful as insulation between metal lines in an electronic device such as an electrical interconnect structure. Structures containing air gaps are also provided.

Abstract: The present invention provides new light absorbing compositions suitable for use as an antireflective coating (“ARC”) with an overcoated resist layer. ARCs of the invention exhibit increased etch rates in standard plasma etchants. Preferred ARCs of invention have significantly increased oxygen content relative to prior compositions.

Abstract: The present invention provides new photoresist compositions that comprise a resin binder, a photoactive component, particularly an acid generator, and a dye material that contains one or more chromophores that can reduce undesired reflections of exposure radiation. Preferred dye compounds are polymeric materials that include one or more chromophores such as anthracene and other polycyclic moieties that effectively absorb deep UV exposure radiation.

Abstract: Methods for depositing uniform, pinhole-defect free organic polysilica coatings are provided. These methods allow for the use of these materials as spin-on cap layers in the manufacture of integrated circuits.

Abstract: The invention provides novel polymers and photoresist compositions that comprise the polymers as a resin component. Polymers of the invention contain two distinct groups which can undergo a deblocking reaction in the presence of photogenerated acid, wherein one of the deblocking moieties is an acetal group. The second photoacid-labile group is suitably an ester, particularly as provided by polymerization of an alkyl acrylate group, such as t-butylmethacrylate.

Abstract: The present invention provides new light absorbing compositions suitable for use as antireflective coating compositions (“ARCs”), including for deep UV applications. The antireflective compositions of the invention are particularly useful where a planarizing coating layer is required. ARCs of the invention contain a low molecular weight resin, a plasticizer compound and/or a low Tg resin. The invention also includes methods for applying forming planarizing ARC coating layers.

Abstract: Compositions and methods of the invention provide for a controlled flow of resist into device contact (via) holes during a post-exposure, post-development hard-bake step. Resists of the invention are positive-acting and contain one or more components that are preferably substantially stable (i.e. no substantial crosslinking) during: 1) soft-bake, pre-exposure thermal treatment to remove solvent carrier of the applied resist, and 2) post-exposure, pre-development thermal treatment to promote or enhance the acid-promoted reaction in exposed regions (typically a de-blocking reaction). However, resists of the invention will crosslink during a post-development more stringent thermal treatment (thermal flow hard-bake step).

Abstract: A method of forming air gaps within a solid structure is provided. In this method, a sacrificial material is covered by an overlayer. The sacrificial material is then removed through the overlayer to leave an air gap. Such air gaps are particularly useful as insulation between metal lines in an electronic device such as an electrical interconnect structure. Structures containing air gaps are also provided.

Abstract: A method for manufacturing electronic devices using multiple layers of pre-porous dielectric materials that are made porous subsequent to etching and metal filling of apertures is provided. The pre-porous layers may be made porous sequentially or during a single processing step. Such pre-porous dielectric layers are selected not only to provide low dielectric constants after being made porous, but also to provide a difference in etch rates. Structures having such multiple layers of pre-porous dielectric layers are also provided.

Abstract: Organic polysilica materials containing one or more silicon-containing cross-linking agents having improved modulus and low dielectric constants and methods of preparing such materials are provided. These materials are useful in the manufacture of devices, such as electronic or optoelectronic devices, requiring low dielectric constant materials having good mechanical properties.

Abstract: Methods for depositing uniform, pinhole-defect free organic polysilica coatings are provided. These methods allow for the use of these materials as spin-on cap layers in the manufacture of integrated circuits.

Abstract: The invention provides novel polymers and photoresist compositions that comprise the polymers as a resin component. Polymers of the invention contain two distinct groups which can undergo a deblocking reaction in the presence of photogenerated acid, wherein one of the deblocking moieties is an acetal group. The second photoacid-labile group is suitably an ester, particularly as provided by polymerization of an alkyl acrylate group, such as t-butylmethacrylate.

Abstract: New photoresists are provided that are suitable for short wavelength imaging, including sub-200 nm, particularly 193 nm. Resists of the invention contain a polymer that comprises fluoro substitution and alicyclic leaving groups, such may be provided by polymerization of an alkyl acrylate compound.

Abstract: The invention includes polymers that contain an alicyclic group (cage group) and acetal group which can undergo a deblocking reaction in the presence of photogenerated acid. The invention also provides photoresists that contain such polymers, particularly for imaging at short wavelengths such as sub-300 nm and sub-200 nm.

Abstract: The present invention provides new light absorbing compositions suitable for use as antireflective coating compositions (“ARCs”), particularly for deep UV applications. The antireflective compositions of the invention in general comprise a resin binder component that contains a high molecular weight polymer, e.g. a polymer having an Mw of at least about 40,000 daltons. ARCs of the invention exhibit exceptional conformality upon application to a substrate surface. For example, ARCs of the invention can coat substantial topography such as vertical and sloping steps with high conformality.