Abstract: The disclosure relates to the formation of n-doped single crystal diamond (SCD). In general, a SCD substrate is preferentially anisotropically etched to provide one or more recesses in the SCD substrate, where the recesses are defined by (1 1 1) surface sidewalls resulting from the preferential anisotropic etching process. The recesses generally have a pyramidal shape. N-type doped SCD (e.g., using a phosphorous dopant) is then deposited into the preferentially anisotropically etched recesses. When the SCD substrate is a p-type diamond (e.g., using a boron dopant), the resulting structure can be used as a p-n junction, for example for use in various power electronic apparatus such as diodes, etc.

Abstract: New and improved microwave plasma assisted reactors, for example chemical vapor deposition (MPCVD) reactors, are disclosed. The disclosed microwave plasma assisted reactors operate at pressures ranging from about 10 Torr to about 760 Torr. The disclosed microwave plasma assisted reactors include a movable lower sliding short and/or a reduced diameter conductive stage in a coaxial cavity of a plasma chamber. For a particular application, the lower sliding short position and/or the conductive stage diameter can be variably selected such that, relative to conventional reactors, the reactors can be tuned to operate over larger substrate areas, operate at higher pressures, and discharge absorbed power densities with increased diamond synthesis rates (carats per hour) and increased deposition uniformity.

Abstract: The disclosure relates to the inclusion of an image embedded in or on a single crystal diamond such that the image is part of the single crystal diamond structure. The disclosed methods use a combination of gemstone deposition processes and patterning processes to create single crystal gemstones with embedded color variations that can create externally visible two-dimensional or three-dimensional images in a seamless single crystal matrix without visible internal lines/interfacial boundaries. The image embedded image is differently colored from the surrounding diamond matrix. The color variation is accomplished by a change in the diamond growth conditions or treatment of the diamond.

Abstract: New and improved microwave plasma assisted reactors, for example chemical vapor deposition (MPCVD) reactors, are disclosed. The disclosed microwave plasma assisted reactors operate at pressures ranging from about 10 Torr to about 760 Torr. The disclosed microwave plasma assisted reactors include a movable lower sliding short and/or a reduced diameter conductive stage in a coaxial cavity of a plasma chamber. For a particular application, the lower sliding short position and/or the conductive stage diameter can be variably selected such that, relative to conventional reactors, the reactors can be tuned to operate over larger substrate areas, operate at higher pressures, and discharge absorbed power densities with increased diamond synthesis rates (carats per hour) and increased deposition uniformity.

Abstract: The present invention relates to a microwave plasma deposition process and apparatus for producing diamond, preferably as single crystal diamond (SCD). The process and apparatus enables the production of multiple layers of the diamond by the use of an extending device to increase the length and the volume of a recess in a holder containing a SCD substrate as layers of diamond are deposited. The diamond is used for abrasives, cutting tools, gems, electronic substrates, heat sinks, electrochemical electrodes, windows for high power radiation and electron beams, and detectors.

Abstract: A miniature microwave plasma torch apparatus (10) is described. The microwave plasma torch apparatus (10) is used for a variety of applications where rapid heating of a small amount of material is needed. The miniature microwave plasma torch apparatus (10) operates near or at atmospheric pressure for use in materials processing. The apparatus (10) provides a wide range of flow rates so that discharge properties vary from diffusional flow of radicals for gentle surface processing to high velocity, approaching supersonic, torch discharges for cutting and welding applications. The miniature microwave plasma torch apparatus (10) also has a very small materials processing spot size.

Abstract: An apparatus and process for manufacturing changes of a substrate in a work region which is 100×100×100 microns or smaller is described. The apparatus uses a plasma source adjacent to the work region to produce radiation or matter which changes the surface. An atomic force microscope or laser can be used in addition. The process and apparatus can be used to produce MEMS devices on a substrate for use in a wide variety of applications.

Abstract: An apparatus and process for manufacturing changes of a substrate in a work region which is 100×100×100 microns or smaller is described. The apparatus uses a plasma source adjacent to the work region to produce radiation or matter which changes the surface. An atomic force microscope or laser can be used in addition. The process and apparatus can be used to produce MEMS devices on a substrate for use in a wide variety of applications.

Abstract: Wetted thin diamond films which are drapable are described. The films are mounted on various substrates and used as windows for electromagnetic radiation or form a surface coating on an article of manufacture.

Abstract: A miniature microwave plasma torch apparatus (10) is described. The microwave plasma torch apparatus (10) is used for a variety of applications where rapid heating of a small amount of material is needed. The miniature microwave plasma torch apparatus (10) operates near or at atmospheric pressure for use in materials processing. The apparatus (10) provides a wide range of flow rates so that discharge properties vary from diffusional flow of radicals for gentle surface processing to high velocity, approaching supersonic, torch discharges for cutting and welding applications. The miniature microwave plasma torch apparatus (10) also has a very small materials processing spot size.

Abstract: A MEMS chip sensor (10, 20, 30, 40, 50, 60, 70) based upon detection of an induced inductance in the sensor is described. The sensor is used in an environment for detection of fluid pressures. The method and system is particularly used in animals, including humans, to sense pressure changes, particularly pressure in the eyeball.

Abstract: Wetted thin diamond films which are drapable are described. The films are mounted on various substrates and used as windows for electromagnetic radiation or form a surface coating on an article of manufacture.

Abstract: An apparatus and method which maintains plasma discharges (for instance 25) in containers (for instance 20) which have an internal section of 1 cm or less in width are described. The very small cross-section plasma discharges are useful in MEMS devices, in spectrometers and in spectroscopy.

Abstract: A MEMS chip sensor (10, 20, 30, 40, 50, 60, 70) based upon detection of an induced inductance in the sensor is described. The sensor is used in an environment for detection of fluid pressures. The method and system is particularly used in animals, including humans, to sense pressure changes, particularly pressure in the eyeball.

Abstract: An apparatus and method which maintains plasma discharges (for instance 25) in containers (for instance 20) which have an internal section of 1 cm or less in width are described. The very small cross-section plasma discharges are useful in MEMS devices, in spectrometers and in spectroscopy.