Patents by Inventor Timothy Michaelson
Timothy Michaelson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20190299357Abstract: A method of fabricating a polishing layer of a polishing pad includes successively depositing a plurality of layers with a 3D printer, each layer of the plurality of polishing layers deposited by ejecting a base material from a first nozzle and an additive material from a second nozzle and solidifying the base and additive material to form a solidified pad material.Type: ApplicationFiled: June 17, 2019Publication date: October 3, 2019Inventors: Mahendra Christopher ORILALL, Timothy MICHAELSON, Kasiraman KRISHNAN, Rajeev BAJAJ, Nag B. PATIBANDLA, Daniel REDFIELD, Fred C. REDEKER, Gregory E. MENK
-
Patent number: 10322491Abstract: A method of fabricating a polishing layer of a polishing pad includes successively depositing a plurality of layers with a 3D printer, each layer of the plurality of polishing layers deposited by ejecting a base material from a first nozzle and an additive material from a second nozzle and solidifying the base and additive material to form a solidified pad material.Type: GrantFiled: October 16, 2015Date of Patent: June 18, 2019Assignee: APPLIED MATERIALS, INC.Inventors: Mahendra Christopher Orilall, Timothy Michaelson, Kasiraman Krishnan, Rajeev Bajaj, Nag B. Patibandla, Daniel Redfield, Fred C. Redeker, Gregory E. Menk
-
Patent number: 10209613Abstract: An integrated extreme ultraviolet (EUV) blank production system includes: a vacuum chamber for placing a substrate in a vacuum; a first deposition system for depositing a planarization layer having a planarized top surface over the substrate; and a second deposition system for depositing a multi-layer stack on the planarization layer without removing the substrate from the vacuum. The EUV blank is in an EUV lithography system includes: an extreme ultraviolet light source; a mirror for directing light from the EUV source; a reticle stage for placing a EUV mask blank with a planarization layer; and a wafer stage for placing a wafer. The EUV blank includes: a substrate; a planarization layer to compensate for imperfections related to the surface of the substrate, the planarization layer having a flat top surface; and a multi-layer stack on the planarization layer.Type: GrantFiled: May 27, 2016Date of Patent: February 19, 2019Assignee: APPLIED MATERIALS, INC.Inventors: Cara Beasley, Ralf Hofmann, Majeed Foad, Timothy Michaelson
-
Patent number: 9829805Abstract: A photoresist vapor deposition system includes: a vacuum chamber having a heating element and cooled chuck for holding a substrate, the vacuum chamber having a heated inlet; and a vapor deposition system connected to the heated inlet for volatilizing a precursor into the vacuum chamber for condensing a photoresist over the substrate cooled by the cooled chuck. The deposition system creates a semiconductor wafer system that includes: a semiconductor wafer; and a vapor deposited photoresist over the semiconductor wafer. An extreme ultraviolet lithography system requiring the semiconductor wafer system includes: an extreme ultraviolet light source; a mirror for directing light from the extreme ultraviolet light source; a reticle stage for imaging the light from the extreme ultraviolet light source; and a wafer stage for placing a semiconductor wafer with a vapor deposited photoresist.Type: GrantFiled: November 21, 2016Date of Patent: November 28, 2017Assignee: APPLIED MATERIALS, INC.Inventors: Timothy Michaelson, Timothy W. Weidman, Barry Lee Chin, Majeed Foad, Paul Deaton
-
Patent number: 9716012Abstract: Provided are methods for selective deposition. Certain methods describe providing a first substrate surface; providing a second substrate surface; depositing a first layer of film over the first and second substrate surfaces, wherein the deposition has an incubation delay over the second substrate surface such that the first layer of film over the first substrate surface is thicker than the first layer of film deposited over the second substrate surface; and etching the first layer of film over the first and second substrate surfaces, wherein the first layer of film over the second substrate surface is at least substantially removed, but the first layer of film over the first substrate is only partially removed.Type: GrantFiled: December 4, 2014Date of Patent: July 25, 2017Assignee: Applied Materials, Inc.Inventors: David Thompson, Huixiong Dai, Patrick M. Martin, Timothy Michaelson, Kadthala R. Narendrnath, Robert Jan Visser, Jingjing Xu, Lin Zhang
-
Patent number: 9632411Abstract: A photoresist vapor deposition system includes: a vacuum chamber having a heating element and cooled chuck for holding a substrate, the vacuum chamber having a heated inlet; and a vapor deposition system connected to the heated inlet for volatilizing a precursor into the vacuum chamber for condensing a photoresist over the substrate cooled by the cooled chuck. The deposition system creates a semiconductor wafer system that includes: a semiconductor wafer; and a vapor deposited photoresist over the semiconductor wafer. An extreme ultraviolet lithography system requiring the semiconductor wafer system includes: an extreme ultraviolet light source; a mirror for directing light from the extreme ultraviolet light source; a reticle stage for imaging the light from the extreme ultraviolet light source; and a wafer stage for placing a semiconductor wafer with a vapor deposited photoresist.Type: GrantFiled: December 23, 2013Date of Patent: April 25, 2017Assignee: Applied Materials, Inc.Inventors: Timothy Michaelson, Timothy W. Weidman, Barry Lee Chin, Majeed Foad, Paul Deaton
-
Publication number: 20170068174Abstract: A photoresist vapor deposition system includes: a vacuum chamber having a heating element and cooled chuck for holding a substrate, the vacuum chamber having a heated inlet; and a vapor deposition system connected to the heated inlet for volatilizing a precursor into the vacuum chamber for condensing a photoresist over the substrate cooled by the cooled chuck. The deposition system creates a semiconductor wafer system that includes: a semiconductor wafer; and a vapor deposited photoresist over the semiconductor wafer. An extreme ultraviolet lithography system requiring the semiconductor wafer system includes: an extreme ultraviolet light source; a mirror for directing light from the extreme ultraviolet light source; a reticle stage for imaging the light from the extreme ultraviolet light source; and a wafer stage for placing a semiconductor wafer with a vapor deposited photoresist.Type: ApplicationFiled: November 21, 2016Publication date: March 9, 2017Inventors: Timothy Michaelson, Timothy W. Weidman, Barry Lee Chin, Majeed Foad, Paul Deaton
-
Publication number: 20160329222Abstract: In some embodiments, a method of forming an etch mask on a substrate is provided that includes (1) forming a resist layer on a substrate; (2) exposing one or more regions of the resist layer to an energy source so as to alter at least one of a physical property and a chemical property of the exposed regions; (3) performing a hardening process on the resist layer to increase the etch resistance of first regions of the resist layer relative to second regions of the resist layer, the hardening process including exposing the resist layer to one or more reactive species within an atomic layer deposition (ALD) chamber; and (4) dry etching the resist layer to remove the one or more second regions and to form a pattern in the resist layer. Other embodiments are provided.Type: ApplicationFiled: July 21, 2016Publication date: November 10, 2016Inventors: Peng Xie, Christopher Dennis Bencher, Huixiong Dai, Timothy Michaelson, Subhash Deshmukh
-
Publication number: 20160274454Abstract: An integrated extreme ultraviolet (EUV) blank production system includes: a vacuum chamber for placing a substrate in a vacuum; a first deposition system for depositing a planarization layer having a planarized top surface over the substrate; and a second deposition system for depositing a multi-layer stack on the planarization layer without removing the substrate from the vacuum. The EUV blank is in an EUV lithography system includes: an extreme ultraviolet light source; a mirror for directing light from the EUV source; a reticle stage for placing a EUV mask blank with a planarization layer; and a wafer stage for placing a wafer. The EUV blank includes: a substrate; a planarization layer to compensate for imperfections related to the surface of the substrate, the planarization layer having a flat top surface; and a multi-layer stack on the planarization layer.Type: ApplicationFiled: May 27, 2016Publication date: September 22, 2016Applicant: Applied Materials, Inc.Inventors: Cara Beasley, Ralf Hofmann, Majeed Foad, Timothy Michaelson
-
Patent number: 9411237Abstract: In some embodiments, a method of forming an etch mask on a substrate is provided that includes (1) forming a resist layer on a substrate; (2) exposing one or more regions of the resist layer to an energy source so as to alter at least one of a physical property and a chemical property of the exposed regions; (3) performing a hardening process on the resist layer to increase the etch resistance of first regions of the resist layer relative to second regions of the resist layer, the hardening process including exposing the resist layer to one or more reactive species within an atomic layer deposition (ALD) chamber; and (4) dry etching the resist layer to remove the one or more second regions and to form a pattern in the resist layer. Other embodiments are provided.Type: GrantFiled: March 11, 2014Date of Patent: August 9, 2016Assignee: Applied Materials, Inc.Inventors: Peng Xie, Christopher Dennis Bencher, Huixiong Dai, Timothy Michaelson, Subhash Deshmukh
-
Planarized extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor
Patent number: 9354508Abstract: An integrated extreme ultraviolet (EUV) blank production system includes: a vacuum chamber for placing a substrate in a vacuum; a first deposition system for depositing a planarization layer having a planarized top surface over the substrate; and a second deposition system for depositing a multi-layer stack on the planarization layer without removing the substrate from the vacuum. The EUV blank is in an EUV lithography system includes: an extreme ultraviolet light source; a mirror for directing light from the EUV source; a reticle stage for placing a EUV mask blank with a planarization layer; and a wafer stage for placing a wafer. The EUV blank includes: a substrate; a planarization layer to compensate for imperfections related to the surface of the substrate, the planarization layer having a flat top surface; and a multi-layer stack on the planarization layer.Type: GrantFiled: December 23, 2013Date of Patent: May 31, 2016Assignee: Applied Materials, Inc.Inventors: Cara Beasley, Ralf Hofmann, Majeed Foad, Timothy Michaelson -
Publication number: 20160107288Abstract: A method of fabricating a polishing layer of a polishing pad includes successively depositing a plurality of layers with a 3D printer, each layer of the plurality of polishing layers deposited by ejecting a base material from a first nozzle and an additive material from a second nozzle and solidifying the base and additive material to form a solidified pad material.Type: ApplicationFiled: October 16, 2015Publication date: April 21, 2016Inventors: Mahendra Christopher ORILALL, Timothy MICHAELSON, Kasiraman KRISHNAN, Rajeev BAJAJ, Nag B. PATIBANDLA, Daniel REDFIELD, Fred C. REDEKER, Gregory E. MENK
-
Patent number: 9236467Abstract: Provided are methods of depositing hafnium or zirconium containing metal alloy films. Certain methods comprise sequentially exposing a substrate surface to alternating flows of an organometallic precursor and a reductant comprising M(BH4)4 to produce a metal alloy film on the substrate surface, wherein M is selected from hafnium and zirconium, and the organometallic precursor contains a metal N. Gate stacks are described comprising a copper barrier layer comprising boron, a first metal M selected from Hf and Zr, and a second metal N selected from tantalum, tungsten, copper, ruthenium, rhodium, cobalt and nickel; and a copper layer overlying the copper barrier seed layer.Type: GrantFiled: February 19, 2014Date of Patent: January 12, 2016Assignee: Applied Materials, Inc.Inventors: Timothy W. Weidman, Timothy Michaelson, Paul F. Ma, Paul Deaton
-
Publication number: 20150275364Abstract: Provided are apparatus and methods for the sequential deposition and annealing of a film within a single processing chamber. An energy source positioned within the processing chamber in an area isolated from process gases can be used to rapidly form and decompose a film on the substrate without damaging underlying layers due to exceeding the thermal budget of the device being formed.Type: ApplicationFiled: March 24, 2015Publication date: October 1, 2015Inventors: David Thompson, Huixiong Dai, Patrick M. Martin, Timothy Michaelson, Kadthala R. Narendrnath, Robert Jan Visser, Jingjing Xu, Lin Zhang
-
Publication number: 20150162214Abstract: Provided are methods for selective deposition. Certain methods describe providing a first substrate surface; providing a second substrate surface; depositing a first layer of film over the first and second substrate surfaces, wherein the deposition has an incubation delay over the second substrate surface such that the first layer of film over the first substrate surface is thicker than the first layer of film deposited over the second substrate surface; and etching the first layer of film over the first and second substrate surfaces, wherein the first layer of film over the second substrate surface is at least substantially removed, but the first layer of film over the first substrate is only partially removed.Type: ApplicationFiled: December 4, 2014Publication date: June 11, 2015Inventors: David Thompson, Huixiong Dai, Patrick M. Martin, Timothy Michaelson, Kadthala R. Narendrnath, Robert Jan Visser, Jingjing Xu, Lin Zhang
-
PLANARIZED EXTREME ULTRAVIOLET LITHOGRAPHY BLANK, AND MANUFACTURING AND LITHOGRAPHY SYSTEMS THEREFOR
Publication number: 20140268080Abstract: An integrated extreme ultraviolet (EUV) blank production system includes: a vacuum chamber for placing a substrate in a vacuum; a first deposition system for depositing a planarization layer having a planarized top surface over the substrate; and a second deposition system for depositing a multi-layer stack on the planarization layer without removing the substrate from the vacuum. The EUV blank is in an EUV lithography system includes: an extreme ultraviolet light source; a mirror for directing light from the EUV source; a reticle stage for placing a EUV mask blank with a planarization layer; and a wafer stage for placing a wafer. The EUV blank includes: a substrate; a planarization layer to compensate for imperfections related to the surface of the substrate, the planarization layer having a flat top surface; and a multi-layer stack on the planarization layer.Type: ApplicationFiled: December 23, 2013Publication date: September 18, 2014Applicant: APPLIED MATERIALS, INC.Inventors: Cara Beasley, Ralf Hofmann, Majeed Foad, Timothy Michaelson -
Publication number: 20140268082Abstract: A photoresist vapor deposition system includes: a vacuum chamber having a heating element and cooled chuck for holding a substrate, the vacuum chamber having a heated inlet; and a vapor deposition system connected to the heated inlet for volatilizing a precursor into the vacuum chamber for condensing a photoresist over the substrate cooled by the cooled chuck. The deposition system creates a semiconductor wafer system that includes: a semiconductor wafer; and a vapor deposited photoresist over the semiconductor wafer. An extreme ultraviolet lithography system requiring the semiconductor wafer system includes: an extreme ultraviolet light source; a mirror for directing light from the extreme ultraviolet light source; a reticle stage for imaging the light from the extreme ultraviolet light source; and a wafer stage for placing a semiconductor wafer with a vapor deposited photoresist.Type: ApplicationFiled: December 23, 2013Publication date: September 18, 2014Applicant: Applied Materials, Inc.Inventors: Timothy Michaelson, Timothy W. Weidman, Barry Lee Chin, Majeed Foad, Paul Deaton
-
Publication number: 20140263172Abstract: In some embodiments, a method of forming an etch mask on a substrate is provided that includes (1) forming a resist layer on a substrate; (2) exposing one or more regions of the resist layer to an energy source so as to alter at least one of a physical property and a chemical property of the exposed regions; (3) performing a hardening process on the resist layer to increase the etch resistance of first regions of the resist layer relative to second regions of the resist layer, the hardening process including exposing the resist layer to one or more reactive species within an atomic layer deposition (ALD) chamber; and (4) dry etching the resist layer to remove the one or more second regions and to form a pattern in the resist layer. Other embodiments are provided.Type: ApplicationFiled: March 11, 2014Publication date: September 18, 2014Inventors: Peng Xie, Christopher Dennis Bencher, Huixiong Dai, Timothy Michaelson, Subhash Deshmukh
-
Publication number: 20140231930Abstract: Provided are methods of depositing hafnium or zirconium containing metal alloy films. Certain methods comprise sequentially exposing a substrate surface to alternating flows of an organometallic precursor and a reductant comprising M(BH4)4 to produce a metal alloy film on the substrate surface, wherein M is selected from hafnium and zirconium, and the organometallic precursor contains a metal N. Gate stacks are described comprising a copper barrier layer comprising boron, a first metal M selected from Hf and Zr, and a second metal N selected from tantalum, tungsten, copper, ruthenium, rhodium, cobalt and nickel; and a copper layer overlying the copper barrier seed layer.Type: ApplicationFiled: February 19, 2014Publication date: August 21, 2014Inventors: Timothy W. Weidman, Timothy Michaelson, Paul F. Ma, Paul Deaton
-
Patent number: 8536068Abstract: Methods for forming photoresists sensitive to radiation on substrate are provided. Atomic layer deposition methods of forming films (e.g., silicon-containing films) photoresists are described. The process can be repeated multiple times to deposit a plurality of silicon photoresist layers. Process of depositing photoresist and forming patterns in photoresist are also disclosed which utilize carbon containing underlayers such as amorphous carbon layers.Type: GrantFiled: October 6, 2011Date of Patent: September 17, 2013Assignee: Applied Materials, Inc.Inventors: Timothy W. Weidman, Timothy Michaelson, Paul Deaton