Abstract: A circuit for generating N analog voltage signals for reference or bias use employs N analog floating gate storage devices. Circuitry is provided so that all floating gate storage devices can be programmed to their target voltages individually or in parallel. Electron injection circuitry is provided for injecting electrons on to and a tunneling structure is provided for removing electrons from the floating gate of each floating gate storage device. A transistor structure with a lightly doped drain is provided for control of the tunneling structure. A capacitor is connected to each floating gate node to provide control of the injection structure. A dynamic analog storage element is provided to store the target voltage for the floating gate storage device. A comparator is provided to monitor the floating gate voltage and target voltage and control tunneling and injection. A digital storage device is provided to statically store the output of the comparator.

Abstract: A proximity sensor system includes a sensor matrix array having a characteristic capacitance on horizontal and vertical conductors connected to sensor pads. The capacitance changes as a function of the proximity of an object or objects to the sensor matrix. The change in capacitance of each node in both the X and Y directions of the matrix due to the approach of an object is converted to a set of voltages in the X and Y directions. These voltages are processed by analog circuitry to develop electrical signals representative of the centroid of the profile of the object, i.e, its position in the X and Y dimensions. The profile of position may also be integrated to provide Z-axis (pressure) information.

Abstract: A proximity sensor system includes a touch-sensor pad with a sensor matrix array having a characteristic capacitance on horizontal and vertical conductors connected to sensor pads. The capacitance changes as a function of the proximity of an object or objects to the sensor matrix. The change in capacitance of each node in both the X and Y directions of the matrix due to the approach of an object is converted to a set of voltages in the X and Y directions. These voltages are processed by circuitry to develop electrical signals representative of the centroid of the profile of the object, i.e, its position in the X and Y dimensions. Noise reduction and background level setting techniques inherently available in the architecture are employed. A conductive paintbrush-type stylus is used to produce paint-like strokes on a display associated with the touch-sensor pad.

Abstract: A circuit for use as a channel of a minimum selector and subtractor circuit includes a P-Channel MOS transistor having a gate connected to an input node, a source connected to the output of a current source, and a drain connected to a fixed voltage source. The source of the P-Channel transistor is connectable to a common conductive line through a first switch. The source of the P-Channel transistor is also connected to the non-inverting input of a transconductance amplifier. The inverting input of the transconductance amplifier is connected to a first plate of a capacitor. The second plate of the capacitor is connected to a fixed voltage source such as ground. The output of the transconductance amplifier is connectable to its inverting input through a second switch. The output of the transconductance amplifier forms the output of the minimum selector and subtractor circuit. A plurality of individual channel circuits may all be connected to the common conductive line.

Abstract: A proximity sensor system includes a sensor matrix array having a characteristic capacitance on horizontal and vertical conductors connected to sensor pads. The capacitance changes as a function of the proximity of an object or objects to the sensor matrix. The change in capacitance of each node in both the X and Y directions of the matrix due to the approach of an object is converted to a set of voltages in the X and Y directions. These voltages are processed by analog circuitry to develop electrical signals representative of the centroid of the profile of the object, i.e., its position in the X and Y dimensions. The profile of position may also be integrated to provide Z-axis (pressure) information.

Abstract: An analog storage array according to the present invention is disposed on a semiconductor substrate. The array is arranged as a plurality of rows and a plurality of columns and includes a plurality of N-channel MOS transistors disposed in the rows and columns in a p-well in the semiconductor substrate. Each of the MOS transistors includes a source, a drain, and a floating gate forming a tunneling junction with a tunneling electrode. An input line is associated with each of the rows in the array. Each input line is connected to the source of each of the N-channel MOS transistors disposed in the row with which the input line is associated. A bias line is associated with each of the rows in the array. Each bias line is capacitively coupled to the floating gate of each of the N-channel MOS transistors disposed in the row with which the bias line is associated. A tunnel line is associated with each of the columns in the array.

Abstract: A synaptic array according to the present invention comprises a plurality of electrically-adaptable elements. Electrons may be placed onto and removed from a floating node in each electrically adaptable element associated with at least one MOS insulated gate field effect transistor, usually the gate of the transistor, in an analog manner, by application of first and second electrical control signals generated in response to an adapt signal. The inputs to all synaptic elements in a row are connected to a common row input line. Adapt inputs to all synaptic elements in a column are connected together to a common column adapt line. The current supplied to all amplifiers in a column is commonly provided by a sense line.

Abstract: The present invention is a method and apparatus for performing neighborhood processing operations on an n dimensional processing plane. In a simple, two dimensional, example, an M by N processing plane is successively scanned by rows. The output information from each row is presented on column lines. The analog data resulting from a fixed number of successive scans are temporarily held in a multi-stage analog buffer. A computing array is configured to perform the neighborhood operations or other limited co-operand operations on the shifted data. The computing array examines information from a slice made up of selected numbers of successive rows of the entire array, performs the operations on that portion, and provides a series of output signals representative of the result.

Abstract: A moving object classifier is integrated onto a single integrated circuit chip and includes a retina comprising a two-dimensional array of photosensors upon which the image of the object of interest is focused. A position classifier receives inputs from the retina and determines where in the retina the image of an object is located. An object classifier receives inputs from the portion of interest of the retina and computes the degree of membership of the image to each class to be classified and determines which class has the largest membership function. A scan controller controlled by the position classifier limits the object classifier data to the portion of the retinal image which contains the object. An interface controller interfaces the other elements on the integrated circuit chip with a microcontroller, which comprises a standard CPU, memory and input/output lines interfacing to the interface controller.

Abstract: A circuit for generating N analog voltage signals for reference or bias use employs N analog floating gate storage devices. Electron injection circuitry is provided for injecting electrons on to and a tunneling structure is provided for removing electrons from the floating gate of each floating gate storage device. A follower amplifier is connected to each floating gate storage device and drives an analog output voltage bus. A capacitor is connected to each analog output storage bus. An analog pass gate is connected between each analog output voltage bus and a common monitor/dynamic load bus. Each analog pass gate is driven by a strobe signal.

Abstract: A circuit for generating N analog voltage signals for reference or bias use employs N analog floating gate storage devices. Electron injection circuitry is provided for injecting electrons on to and a tunneling structure is provided for removing electrons from the floating gate of each floating gate storage device. A follower amplifier is connected to each floating gate storage device and drives an analog output voltage bus. A capacitor is connected to each analog output storage bus. An analog pass gate is connected between each analog output voltage bus and a common monitor/dynamic load bus. Each analog pass gate is driven by a strobe signal.

Abstract: An adaptable current mirror includes first and second MOS transistors. The first MOS transistor has its gate connected to its drain. A MOS capacitor structure is connected in series between the gate of the first MOS transistor and the gate of the second MOS transistor. Electrons may be placed onto and removed in an analog manner from a floating node associated with the second MOS transistor, usually the gate of the transistor, by application of first and second electrical control signals. A first electrical control signal controls the injection of electrons onto the floating node from an electron injection structure and the second electrical control signal controls the removal of electrons from the floating node by an electron removal structure. A plurality of adaptable current mirrors communicating with a plurality of current-carrying lines may be employed for indicating the output of the one of the plurality of current-carrying lines through which the most current is flowing.

Abstract: An adaptable MOS winner take all circuit includes a plurality of adaptable current mirrors. Each adaptable current mirror includes a floating node onto which and from which electrons may be transported by control signals and electrical semiconductor structures. Electrons may be placed onto and removed from a floating node associated with at least one MOS insulated gate field effect transistor, usually the gate of the transistor, in an analog manner, by application of first and second electrical control signals. A first electrical control signal controls the injection of electrons onto the floating node from an electron injection structure and the second electrical control signal controls the removal of electrons from the floating node by an electron removal structure.

Abstract: An electronic circuit is disclosed having a sample/hold amplifier connected to an adaptive amplifier. A plurality of such electronic cicuits may be configured in an array of rows and columns. An input voltage vector may be compared with an analog voltage vector stored in a row or column of the array and the stored vector closest to the applied input vector may be identified and further processed.

Abstract: An MOS current mirror includes a floating node onto which and from which electrons may be transported by control signals and electrical semiconductor structures in order to adapt the current mirror to supply a desired output current when a particular input calibration current is present.

Abstract: An integrated circuit amplifier having a random input offset voltage is adaptable such that the input offset voltage may be cancelled out. An inverting input node is a floating input node and is coupled to a source of input signal by a first capacitor. A second capacitor is connected between the output of the amplifier and the floating node. An ultraviolet window above the second capacitor allows the floating node to be charged, by the application of ultraviolet light, to a voltage which effectively cancels the input offset voltage. The ultraviolet window and capacitor electrodes are arranged such that the ultraviolet light may strike only the desired areas of the structure.

Abstract: An electronic circuit is disclosed having a sample/hold amplifier connected to an adaptive amplifier. A plurality of such electronic circuits may be configured in an array of rows and columns. An input voltage vector may be compared with an analog voltage vector stored in a row or column of the array and the stored vector closest to the applied input vector may be identified and further processed.

Abstract: An integrated circuit amplifier having a random input offset voltage is adaptable such that then input offset voltage may be cancelled out. An inverting input node is a floating input node and is coupled to a source of input signal by a first capacitor. A second capacitor is connected between the output of the amplifier and the floating node. An ultraviolet window above the second capacitor allows the floating node to be charged, by the application of ultraviolet light, to a voltage which effectively cancels the input offset voltage. The ultraviolet window and capacitor electrodes are arranged such that the ultraviolet light may strike only the desired areas of the structure.

Abstract: An integrated circuit amplifier having a random input offset voltage is adaptable such that the input offset voltage may be cancelled out. An inverting input node is a floating input node and is coupled to a source of input signal by a first capacitor. A second capacitor is connected between the output of the amplifier and the floating node. An ultraviolet window above the second capacitor allows the floating node to be charged, by the application of ultraviolet light, to a voltage which effectively cancels the input offset voltage. The ultraviolet window and capacitor electrodes are arranged such that the ultraviolet light may strike only the desired areas of the structure.

Abstract: Electrons may be placed onto and removed from a floating node associated with at least one MOS transistor, usually the gate of the transistor, in an analog manner, by application of first and second electrical control signals. A first electrical control signal controls the injection of electrons onto the floating node from an electron injection structure and the second electrical control signal controls the removal of electrons from the floating node by an electron removal structure.An analog MOS integrated circuit comprises an amplifier circuit having a gain much larger than 1. The inverting input into one stage of this amplifier circuit is a floating node forming the gate of at least one MOS transistor. A first capacitor couples an input of the circuit to this floating node. Electrical semiconductor structures are provided for both linearly adding and removing charge from the floating gate, thus allowing the offset voltage of the amplifier to be adapted.