Abstract: According to some embodiments, an apparatus having corresponding methods includes a storage module configured to store data and instructions; a first processor pipeline configured to process the data and instructions when the first processor pipeline is selected; a second processor pipeline configured to process the data and instructions when the second processor pipeline is selected; and a selection module configured to select either the first processor pipeline or the second processor pipeline.

Abstract: A memory driver architecture and associated methods are generally described.

Abstract: Techniques and apparatuses for reducing power consumption in processor based systems during active and standby modes. A low power TLB is disclosed that does not precharge invalid entries or write to output circuits physical addresses that are the same as immediately preceding lookups. A circuit to acknowledge that the integrated circuits of the processor have entered low power standby mode that is low leakage and consumes little power is disclosed. Minimum delay buffers that have very low leakage because of series placement of a long delay enable transistor with the transistors of the inverters that make up the buffers is also disclosed.

Abstract: A method and apparatus for preventing charge damage to a protected structure during processing of a semiconductor device. A first source/drain region of a protection transistor is coupled to a protected transistor gate. A second source/drain region of the protection transistor is coupled to ground. The protection transistor is then turned on during the processing of the device to ground the protected transistor gate.

Abstract: An integrated circuit includes: a comparator coupled in a configuration to compare two voltages. One of the two voltages includes a semiconductor junction voltage drop. The other of the two voltages includes a voltage signal, X V.sub.t, where V.sub.t is a thermal voltage and X includes a selected signal value, which modulates the thermal voltage. The configuration includes a feedback path to vary X until X V.sub.t approximately equals the voltage including the semiconductor junction voltage drop.

Abstract: A method and apparatus for preventing charge damage to a protected structure during processing of a semiconductor device. A first source/drain region of a protection transistor is coupled to a protected transistor gate. A second source/drain region of the protection transistor is coupled to ground. The protection transistor is then turned on during the processing of the device to ground the protected transistor gate.