Patents by Inventor Timothy W. Weidman

Timothy W. Weidman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5635338
    Abstract: A class of silicon-containing materials display excellent sensitively in the ultraviolet and deep ultraviolet for the formation of patterns by radiation induced conversion into glassy compounds. Materials are depositable from the vapor phase and show excellent promise for use such as resists in the fabrication of electronic and optical devices.
    Type: Grant
    Filed: February 25, 1994
    Date of Patent: June 3, 1997
    Assignee: Lucent Technologies Inc.
    Inventors: Ajey M. Joshi, Timothy W. Weidman
  • Patent number: 5439780
    Abstract: A class of silicon-containing materials display excellent sensitivity in the ultraviolet and deep ultraviolet for the formation of patterns by radiation induced conversion into glassy compounds. Materials are depositable from the vapor phase and show excellent promise for use such as resists in the fabrication of electronic and optical devices.
    Type: Grant
    Filed: April 29, 1992
    Date of Patent: August 8, 1995
    Assignee: AT&T Corp.
    Inventors: Ajey M. Joshi, Timothy W. Weidman
  • Patent number: 4921321
    Abstract: A new class of silicon compounds having a high percentage of silicon atoms bonded to three other silicon atoms has been synthesized. These materials denominated polysilynes form smooth amorphous films which have quite useful properties. For example, photooxidation produces a refractive index change from 1.70 to 1.45. Similarly, photooxidation also produces a substantial change in solubility. Thus the materials are useful for the fabrication of optical and electronic devices.
    Type: Grant
    Filed: April 27, 1989
    Date of Patent: May 1, 1990
    Assignee: American Telephone and Telegraph Company
    Inventor: Timothy W. Weidman
  • Patent number: 4830982
    Abstract: Semi-insulating epitaxial layers of Group III-V based semiconductor compounds are produced by a MOCVD process through the use of organic titanium-based compounds. Resistivities greater than 1.times.10.sup.7 ohm/cm have been achieved.
    Type: Grant
    Filed: June 4, 1987
    Date of Patent: May 16, 1989
    Assignees: American Telephone and Telegraph Company, AT&T Bell Laboratories
    Inventors: Andrew G. Dentai, Charles H. Joyner, Jr., Timothy W. Weidman, John L. Zilko
  • Patent number: 4782034
    Abstract: Semi-insulating epitaxial layers of Group III-V based semiconductor compounds are produced by an MOCVD process through the use of bis arene titanium sources, such as cyclopentadienyl cycloheptatrienyl titanium and bis (benzene) titanium.
    Type: Grant
    Filed: June 4, 1987
    Date of Patent: November 1, 1988
    Assignee: American Telephone and Telegraph Company, AT&T Bell Laboratories
    Inventors: Andrew G. Dentai, Charles H. Joyner, Jr., Timothy W. Weidman, John L. Zilko