Abstract: A semiconductor device includes first and second semiconductor fins extending from a substrate and a source/drain region epitaxially grown in recesses of the first and second semiconductor fins. A top surface of the source/drain region is higher than a surface level with top surfaces of the first and second semiconductor fins. The source/drain region includes a plurality of buffer layers. Respective layers of the plurality of buffer layers are embedded between respective layers of the source/drain region.

Abstract: A method includes forming a stack of channel layers and sacrificial layers over a substrate, patterning the stack to form a fin-shape structure, and recessing a portion of the fin-shape structure to form a recess. A top surface of the substrate under the recess is covered at least by a bottommost sacrificial layer of the stack. The method also includes forming inner spacers on terminal ends of the sacrificial layers that are above the bottommost sacrificial layer, depositing an undoped layer in the recess, and forming a doped epitaxial feature over the undoped layer. The undoped layer covers terminal ends of a bottommost channel layer of the stack. The doped epitaxial feature covers terminal ends of the channel layers that are above the bottommost channel layer.

Abstract: A display device includes a first substrate, a light-emitting element, a light conversion layer, and a color filter layer. The light-emitting element is disposed on the first substrate. The light conversion layer is disposed on the light-emitting element. In addition, the color filter layer is overlapped the light-emitting element and the light conversion layer.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate, a channel layer, a barrier layer, a compound semiconductor layer, a gate electrode, and a stack of dielectric layers. The channel layer is disposed on the substrate. The barrier layer is disposed on the channel layer. The compound semiconductor layer is disposed on the barrier layer. The gate electrode is disposed on the compound semiconductor layer. The stack of dielectric layers is disposed on the gate electrode. The stack of dielectric layers includes layers having different etching rates.

Abstract: Apparatus, systems and methods for irrigating lands are disclosed. In one example, an irrigation system is disclosed. The irrigation system includes a gate and a microcontroller unit (MCU). The gate is configured for adjusting a water flow for irrigating a piece of land. The MCU is configured for controlling the gate to adjust the water flow based on environmental information related to the piece of land.

Abstract: In a method of manufacturing a pellicle for an extreme ultraviolet (EUV) photomask, a nanotube layer including a plurality of carbon nanotubes is formed, the nanotube layer is attached to a pellicle frame, and a solvent dipping treatment is performed to the nanotube layer by applying bubbles in a solvent to the nanotube layer.

Abstract: A compound prism module is provided, including: a first prism, a second prism, and an interface filling medium. The first prism has a first light-incident surface, a first reflecting surface, and a first light-emitting surface, where the first light-incident surface and the first light-emitting surface are connected to a first side edge, and the first light-incident surface and the first reflecting surface are connected to a first chamfered plane. The second prism has a second light-incident surface, a second reflecting surface, and a second light-emitting surface, wherein the second light-incident surface and the second light-emitting surface are connected to a second side edge, and the second light-incident surface and the second reflecting surface are connected to a second chamfered plane. The first light-incident surface and the second light-incident surface are connected to each other, and the first side edge and the second side edge are parallel to each other.

Abstract: An image capture assembly includes a first optical module, a first image sensor, a second optical module, a second image sensor, and a data processing circuit. The first optical module captures an image in a first field-of-view and projects the image on the first image sensor, such that the first image sensor generates a first image frame. The second optical module captures another image in a second field-of-view and projects the another image on the second image sensor, such that the second image sensor generates a second image frame. The data processing circuit merges the first image frame and the second image frame in a longitudinal direction, to generate a combined image frame. The vertical resolution and the horizontal resolution of the combined image are configured in accordance with an aspect ratio of a display screen.

Abstract: An image capture assembly includes a first optical module, a first image sensor, a second optical module, a second image sensor, and a data processing circuit. The first optical module captures an image in a first field-of-view and projects the image on the first image sensor, such that the first image sensor generates a first image frame. The second optical module captures another image in a second field-of-view and projects the another image on the second image sensor, such that the second image sensor generates a second image frame. The data processing circuit merges the first image frame and the second image frame in a longitudinal direction, to generate a combined image frame. The vertical resolution and the horizontal resolution of the combined image are configured in accordance with an aspect ratio of a display screen.

Abstract: A camera module includes a sensor unit, a lens unit, and a plurality of conductive members. The sensor unit includes a substrate and an image sensor. The substrate is formed with a plurality of first through holes. The lens unit is disposed on the sensor unit and includes an electrowetting lens device. The electrowetting lens device includes a sealed structure aligned with the image sensor along an optical axis and is formed with a plurality of second through holes. Each of the second through holes is registered with a corresponding one of the first through holes for receiving a corresponding conductive member. A focal length of the electrowetting lens device is adjustably controlled by an electric field applied to the conductive members.