Abstract: A silicone hydrogel composition includes a first hydrophilic monomer, a siloxane compound, a first crosslinking monomer, a second hydrophilic monomer, and a second crosslinking monomer. The first hydrophilic monomer and the siloxane compound have an acrylate group or an acrylamide group and may also have a methacrylate group or a methacrylamide group. The first crosslinking monomer has a plurality of acrylate groups or acrylamide groups and may also have methacrylate groups or methacrylamide groups. The second hydrophilic monomer has a non-conjugated vinyl group. The second crosslinking monomer has a plurality of non-conjugated vinyl groups. A sum of the weights of the second hydrophilic monomer and the second crosslinking monomer is 40 to 100 parts by weight, relative to 100 parts by weight of the sum of the weights of the first hydrophilic monomer, the siloxane compound, and the first crosslinking monomer.

Abstract: A silicone hydrogel composition includes a first hydrophilic monomer, a siloxane compound, a first crosslinking monomer, a second hydrophilic monomer, and a second crosslinking monomer. The first hydrophilic monomer and the siloxane compound have an acrylate group or an acrylamide group and may also have a methacrylate group or a methacrylamide group. The first crosslinking monomer has a plurality of acrylate groups or acrylamide groups and may also have methacrylate groups or methacrylamide groups. The second hydrophilic monomer has a non-conjugated vinyl group. The second crosslinking monomer has a plurality of non-conjugated vinyl groups. A sum of the weight of the second hydrophilic monomer and the weight of the second crosslinking monomer is 40 to 100 parts by weight, relative to 100 parts by weight of the sum of the weight of the first hydrophilic monomer, the weight of the siloxane compound, and the weight of the first crosslinking monomer.

Abstract: A semiconductor device includes a semiconductor substrate having a first region and a second region, insulators, gate stacks, and first and second S/Ds. The first and second regions respectively includes at least one first semiconductor fin and at least one second semiconductor fin. A width of a middle portion of the first semiconductor fin is equal to widths of end portions of the first semiconductor fin. A width of a middle portion of the second semiconductor fin is smaller than widths of end portions of the second semiconductor fin. The insulators are disposed on the semiconductor substrate. The first and second semiconductor fins are sandwiched by the insulators. The gate stacks are over a portion of the first semiconductor fin and a portion of the second semiconductor fin. The first and second S/Ds respectively covers another portion of the first semiconductor fin and another portion of the second semiconductor fin.

Abstract: A semiconductor device includes a semiconductor substrate having a first region and a second region, insulators, gate stacks, and first and second S/Ds. The first and second regions respectively includes at least one first semiconductor fin and at least one second semiconductor fin. A width of a middle portion of the first semiconductor fin is equal to widths of end portions of the first semiconductor fin. A width of a middle portion of the second semiconductor fin is smaller than widths of end portions of the second semiconductor fin. The insulators are disposed on the semiconductor substrate. The first and second semiconductor fins are sandwiched by the insulators. The gate stacks are over a portion of the first semiconductor fin and a portion of the second semiconductor fin. The first and second S/Ds respectively covers another portion of the first semiconductor fin and another portion of the second semiconductor fin.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate and a gate structure over the substrate. The semiconductor device structure also includes a source/drain feature in the substrate, protruding from the substrate, and on a sidewall surface of the gate structure. The semiconductor device structure also includes an insulating barrier structure in the substrate and partially covering the bottom and sidewalls of the source/drain feature.

Abstract: The present invention provides a water-soluble silicone macromer. The water-soluble silicone macromer has a general formula: E?(M1)x?(M2)y, wherein M1 is a repeating unit which is derived from a silicone containing monomer, M2 is a repeating unit which is derived from a first hydrophilic monomer, and E is an ethylenically unsaturated group. The amount of M1 is in a range of 30-60 wt % based on the total weight of the water-soluble silicone macromer, and the amount of M2 is in a range of 40-70 wt % based on the total weight of the water-soluble silicone macromer. A silicone hydrogel composition containing the water-soluble silicone macromer and a silicone hydrogel lens made of the silicone hydrogel composition are also provided herein.

Abstract: The present invention provides a silicone hydrogel composition. The silicone hydrogel composition includes a water-soluble silicone macromere, a hydrophilic monomer, a crosslinker, an initiator and an organic solvent. The water-soluble silicone macromere, the hydrophilic monomer, the crosslinker and the initiator is respectively in the amount of 50-80 wt %, 19-50 wt %, 0.1-1.5 wt % and 0.1-1 wt % based on the total weight of the silicone hydrogel composition.

Abstract: The present invention provides a water-soluble silicone macromer. The water-soluble silicone macromer has a general formula: E?(M1)x?(M2)y, wherein M1 is a repeating unit which is derived from a silicone containing monomer, M2 is a repeating unit which is derived from a first hydrophilic monomer, and E is an ethylenically unsaturated group. The amount of M1 is in a range of 30-60 wt % based on the total weight of the water-soluble silicone macromer, and the amount of M2 is in a range of 40-70 wt % based on the total weight of the water-soluble silicone macromer. A silicone hydrogel composition containing the water-soluble silicone macromer and a silicone hydrogel lens made of the silicone hydrogel composition are also provided herein.

Abstract: The present invention provides a water-soluble silicone macromer. The water-soluble silicone macromer has a general formula: E-(M1)x-(M2)y, wherein M1 is a repeating unit which is derived from a silicone containing monomer, M2 is a repeating unit which is derived from a first hydrophilic monomer, and E is an ethylenically unsaturated group. The amount of M1 is in a range of 30-60 wt % based on the total weight of the water-soluble silicone macromer, and the amount of M2 is in a range of 40-70 wt % based on the total weight of the water-soluble silicone macromer. A silicone hydrogel composition containing the water-soluble silicone macromer and a silicone hydrogel lens made of the silicone hydrogel composition are also provided herein.

Abstract: The present invention provides a silicone hydrogel composition. The silicone hydrogel composition includes a water-soluble silicone macromere, a hydrophilic monomer, a crosslinker, an initiator and an organic solvent. The water-soluble silicone macromere, the hydrophilic monomer, the crosslinker and the initiator is respectively in the amount of 50-80 wt %, 19-50 wt %, 0.1-1.5 wt % and 0.1-1 wt % based on the total weight of the silicone hydrogel composition.

Abstract: A silicone hydrogel composition includes a first hydrophilic monomer, a siloxane compound, a first crosslinking monomer, a second hydrophilic monomer, and a second crosslinking monomer. The first hydrophilic monomer and the siloxane compound have an acrylate group or an acrylamide group and may also have a methacrylate group or a methacrylamide group. The first crosslinking monomer has a plurality of acrylate groups or acrylamide groups and may also have methacrylate groups or methacrylamide groups. The second hydrophilic monomer has a non-conjugated vinyl group. The second crosslinking monomer has a plurality of non-conjugated vinyl groups. A sum of the weight of the second hydrophilic monomer and the weight of the second crosslinking monomer is 40 to 100 parts by weight, relative to 100 parts by weight of the sum of the weight of the first hydrophilic monomer, the weight of the siloxane compound, and the weight of the first crosslinking monomer.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate and a gate structure over the substrate. The semiconductor device structure also includes a source/drain feature in the substrate, protruding from the substrate, and on a sidewall surface of the gate structure. The semiconductor device structure also includes an insulating barrier structure in the substrate and partially covering the bottom and sidewalls of the source/drain feature.

Abstract: An ophthalmic composition includes effective amounts of a comfort enhancing agent, a surfactant, and a buffering agent. The comfort enhancing agent includes a first functional monomer that is 2-methacryloyloxyethyl phosphorylcholine (MPC). The comfort enhancing agent has a HLB value between 8 and 40. In addition, the comfort enhancing agent can further include a second functional monomer that is preferably n-butyl methacrylate (BMA).

Abstract: A semiconductor device includes a semiconductor substrate having a first region and a second region, insulators, gate stacks, and first and second S/Ds. The first and second regions respectively includes at least one first semiconductor fin and at least one second semiconductor fin. A width of a middle portion of the first semiconductor fin is equal to widths of end portions of the first semiconductor fin. A width of a middle portion of the second semiconductor fin is smaller than widths of end portions of the second semiconductor fin. The insulators are disposed on the semiconductor substrate. The first and second semiconductor fins are sandwiched by the insulators. The gate stacks are over a portion of the first semiconductor fin and a portion of the second semiconductor fin. The first and second S/Ds respectively covers another portion of the first semiconductor fin and another portion of the second semiconductor fin.

Abstract: A fin-type field effect transistor comprising a substrate, at least one gate stack, spacers and epitaxy material portions is described. The substrate has fins and insulators located between the fins, and the fins comprise channel portions and flank portions beside the channel portions, the flank portions and the channel portions of the fins are protruded from the insulators, the flank portions of the fins and the channel portions of the fins have substantially a same height from top surfaces of the insulators, and each of the flank portions of the fins has a top surface and side surfaces adjoining the top surface. The at least one gate stack is disposed over the substrate, disposed on the insulators and over the channel portions of the fins. The spacers are disposed on the side surfaces of the flank portions of the fins. The epitaxy material portions are located above the top surfaces of the flank portions of the fins.

Abstract: The present invention provides a water-soluble silicone macromer. The water-soluble silicone macromer has a general formula: E-(M1)x-(M2)y, wherein M1 is a repeating unit which is derived from a silicone containing monomer, M2 is a repeating unit which is derived from a first hydrophilic monomer, and E is an ethylenically unsaturated group. The amount of M1 is in a range of 30-60 wt % based on the total weight of the water-soluble silicone macromer, and the amount of M2 is in a range of 40-70 wt % based on the total weight of the water-soluble silicone macromer. A silicone hydrogel composition containing the water-soluble silicone macromer and a silicone hydrogel lens made of the silicone hydrogel composition are also provided herein.

Abstract: A semiconductor device including a substrate, a gate stack, a pair of insulator structures, and source/drain materials is provided. The substrate has a plurality of recesses, wherein the plurality of recesses defines a protruded portion of the substrate having a channel region, and the protruded portion has a first side surface and a second side surface opposite to the first side surface. The gate stack is disposed on the protruded portion of the substrate. The pair of insulator structures are disposed within the plurality of recesses and respectively covering parts of the first side surface and the second side surface of the protruded portion, wherein the channel region is uncovered by the pair of insulator structures. The source/drain materials are disposed on the substrate in the plurality of recesses and on two opposing sides of the channel region, wherein the source/drain materials cover the pair of insulator structures.