Abstract: A multi-shot moulding part structure includes a first structural part, an ink decoration layer, and a second structural part. The first structural part has a first area surface, a second area surface, and a joining surface located on the second area surface. The joining surface is non-parallel to the second area surface. The ink decoration layer is spread on the first area surface and the second area surface, but not on the joining surface. The second structural part is combined with the first structural part and covers the second area surface. The second structural part touches the joining surface. By the second structural part touching the joining surface of the first structural part that is not coated with the ink decoration layer, the structural bonding strength between the first structural part and the second structural part is enhanced.

Abstract: Methods for fabricating an integrated circuit (IC) device with a protection liner between doped semiconductor regions are provided. An example IC device includes a channel material having a first face and a second face opposite the first face, a first doped region and a second doped region in the channel material, extending from the second face towards the first face by a first distance; and an insulator structure in a portion of the channel material between the first and second doped regions, the insulator structure extending from the second face towards the first face by a second distance greater than the first distance. The insulator structure includes a first portion between the second face and the first distance and a second portion between first distance and the second distance. The insulator structure includes a liner material on sidewalls of the first portion but absent on sidewalls of the second portion.

Abstract: Embodiments disclosed herein include transistors and methods of forming transistors. In an embodiment, a transistor comprises a source, a drain, and a pair of spacers between the source and the drain. In an embodiment, a semiconductor channel is between the source and the drain, where the semiconductor channel passes through the pair of spacers. In an embodiment, the semiconductor channel has a first thickness within the pair of spacers and a second thickness between the pair of spacers, where the second thickness is less than the first thickness. In an embodiment, the transistor further comprises a gate stack over the semiconductor channel between the pair of spacers.

Abstract: Techniques are provided herein to form semiconductor devices having epitaxial growth laterally extending between inner spacer structures to mitigate issues caused by the inner spacer structures either being too thick or too thin. A directional etch is performed along the side of a multilayer fin to create a relatively narrow opening for a source or drain region to increase the usable fin space for forming the inner spacer structures. After the inner spacer structures are formed around ends of the semiconductor layers within the fin, the exposed ends of the semiconductor layers are laterally recessed inwards from the outermost sidewalls of the inner spacer structures. Accordingly, the epitaxial source or drain region is grown from the recessed semiconductor ends and thus fills in the recessed regions between the spacer structures.

Abstract: Fin trim plug structures with metal for imparting channel stress are described. In an example, an integrated circuit structure includes a fin including silicon, the fin having a top and sidewalls, wherein the top has a longest dimension along a direction. A first isolation structure is over a first end of the fin. A gate structure including a gate electrode is over the top of and laterally adjacent to the sidewalls of a region of the fin. The gate structure is spaced apart from the first isolation structure along the direction. A second isolation structure is over a second end of the fin, the second end opposite the first end, the second isolation structure spaced apart from the gate structure along the direction. The first isolation structure and the second isolation structure both include a dielectric material laterally surrounding an isolated metal structure.

Abstract: Techniques are provided herein to form semiconductor devices that include a layer across an upper surface of a dielectric fill between devices and configured to prevent or otherwise reduce recessing of the dielectric fill. In this manner, the layer may be referred to as a barrier layer or recess-inhibiting layer. The semiconductor regions of the devices extend above a subfin region that may be native to the substrate. These subfin regions are separated from one another using a dielectric fill that acts as a shallow trench isolation (STI) structure to electrically isolate devices from one another. A barrier layer is formed over the dielectric fill early in the fabrication process to prevent or otherwise reduce the dielectric fill from recessing during subsequent processing. The layer may include oxygen and a metal, such as aluminum.

Abstract: A method for producing xylitol by fermentation of lignocellulosic hydrolysates without detoxification is provided. By using the originally isolated yeast Candida sp., xylose can be effectively converted into xylitol. The invention also provides the Candida strain having high furfural tolerance, and is capable to produce xylitol from various types of non-detoxified lignocellulosic hydrolysates, in which the overall utilization of xylose in hydrolysate can reach over 95%.

Abstract: A method for preparing a xylose-utilizing strain of Saccharomyces cerevisiae and the Saccharomyces cerevisiae are introduced. The preferred recombinant strain contains multiple copies of integrated xylose metabolic genes, and can rapidly ferment xylose to produce ethanol from synthetic medium and lignocellulosic raw materials. The xylose-utilizing strain is applicable for the cellulosic ethanol production industry and brewing industry.

Abstract: A method for producing xylitol by fermentation of lignocellulosic hydrolysates without detoxification is provided. By using the originally isolated yeast Candida sp., xylose can be effectively converted into xylitol. The invention also provides the Candida strain having high furfural tolerance, and is capable to produce xylitol from various types of non-detoxified lignocellulosic hydrolysates, in which the overall utilization of xylose in hydrolysate can reach over 95%.

Abstract: A method for preparing a xylose-utilizing strain of Saccharomyces cerevisiae and the Saccharomyces cerevisiae are introduced. The preferred recombinant strain contains multiple copies of integrated xylose metabolic genes, and can rapidly ferment xylose to produce ethanol from synthetic medium and lignocellulosic raw materials. The xylose-utilizing strain is applicable for the cellulosic ethanol production industry and brewing industry.

Abstract: A method for culturing the yeast for enhancing pentitol production is provided. The yeast cultured according to the present disclosure is Pichia stipitis. Application of the yeast in pentitol production by fermention of the lignocellulosic hydrolysate or the xylose-to-pentitol production yield can be enhanced 3 to 6 times from the non-detoxified or the overliming-processed lignocellulosic hydrolysate.

Abstract: A hydrolysate-adapted yeast, Pichia stipitis INER 1128, is cultivated according to the present invention. The adapted yeast can effectively convert xylose into ethanol in lignocellulosic hydrolysate, which is not even detoxified. Well ethanol yield is obtained while xylose is not wasted and thus cost is reduced.

Abstract: A method for culturing the yeast for enhancing pentitol production is provided. The yeast cultured according to the present disclosure is Pichia stipitis.

Abstract: The present disclosure is related to a method for increasing the ethanol concentration from the conversion of lignocellulose. The pretreated solid residues are mixed with ethanol-containing broth from the fermentation of xylose hydrolysate by Pichia stipitis and then are performed under the process of simultaneous saccharification and fermentation (SSF) with Sacharomyces cerevisiae and cellulase for converting cellulose to ethanol. The final ethanol concentration in broth as well as the ethanol productivity is increased at least 1.8 times in comparison of conventional process for lignocellulosic ethanol production.

Abstract: A method for producing xylitol by fermentation of lignocellulosic hydrolysates without detoxification is provided. By using the originally isolated yeast Candida sp., xylose can be effectively converted into xylitol. The invention also provides the Candida strain having high furfural tolerance, and is capable to produce xylitol from various types of non-detoxified lignocellulosic hydrolysates, in which the overall utilization of xylose in hydrolysate can reach over 95%.

Abstract: A method is provided for improving the efficiency of xylose fermentation in lignocellulosic hydrolysate. The disclosed embodiment raises the efficiency of xylose conversion by adding a specific lignocellulosic material during fermentation. In particular, a 10% enhancement in the efficiency of xylose conversion for ethanol production was given, and the ethanol yield is achieved 90% after adding the specific lignocellulosic material.

Abstract: Isolated polypeptides containing one of SEQ ID NOs: 1-11. Also disclosed are (i) isolated nucleic acids encoding the polypeptides and related expression vectors and host cells; (ii) purified antibodies that recognize the polypeptides; and (iii) methods of producing the polypeptides, diagnosing infection with a coronavirus, and producing the antibodies.