Patents by Inventor Ting-Kai Huang
Ting-Kai Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11993689Abstract: The present invention relates to a foamable composition used to prepare foamed thermoplastic polyurethane and a microwave molded body thereof. The foamable composition includes unfoamed thermoplastic polyurethane particles, a thickener or a bridging agent, and a foaming agent, wherein the unfoamed thermoplastic polyurethane particles have a viscosity of 1,000 poise to 9,000 poise measured at 170° C. according to JISK 7311 test method.Type: GrantFiled: June 13, 2018Date of Patent: May 28, 2024Assignee: SUNKO INK CO., LTD.Inventors: Ting-Kai Huang, Yi-Jung Huang, Hsin-Hung Lin, Hong-Yi Lin, Ya-Chi Wang
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Publication number: 20240154021Abstract: A p-GaN high-electron-mobility transistor (HEMT) includes a buffer layer stacked on a substrate, a channel layer stacked on the buffer layer, a supply layer stacked on the channel layer, a doped layer stacked on the supply layer, and a hydrogen barrier layer covering the supply layer and the doped layer. A source and a drain are electrically connected to the channel layer and the supply layer, respectively. A gate is located on the doped layer. The hydrogen barrier layer is doped with fluorine.Type: ApplicationFiled: December 29, 2022Publication date: May 9, 2024Inventors: TING-CHANG CHANG, Wei-Chen Huang, Shih-Kai Lin, Yong-Ci Zhang, Sheng-Yao Chou, Chung-Wei Wu, Po-Hsun Chen
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Publication number: 20240141205Abstract: This disclosure relates to a composition that includes at least one first ruthenium removal rate enhancer; at least one copper removal rate inhibitor; at least one low-k removal rate inhibitor; and an aqueous solvent.Type: ApplicationFiled: January 10, 2024Publication date: May 2, 2024Inventors: Ting-Kai Huang, Bin Hu, Yannan Liang, Hong Piao
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Publication number: 20240130140Abstract: A semiconductor device includes a substrate having a magnetic tunneling junction (MTJ) region and a logic region, a magnetic tunneling junction (MTJ) on the MTJ region and a first metal interconnection on the MTJ. Preferably, a top view of the MTJ includes a circle and a top view of the first metal interconnection includes an ellipse overlapping the circle.Type: ApplicationFiled: December 26, 2023Publication date: April 18, 2024Applicant: UNITED MICROELECTRONICS CORP.Inventors: Ting-Hsiang Huang, Yi-Chung Sheng, Sheng-Yuan Hsueh, Kuo-Hsing Lee, Chih-Kai Kang
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Patent number: 11941410Abstract: Systems and methods for generating, distributing, and using performance mode BIOS configurations are disclosed. Each performance mode BIOS configuration can be a unique set of BIOS setting values that have been established to optimize a particular performance parameter or set of performance parameters, such as boot speed or operating system installation speed. Based on a given hardware configuration and/or set of performance parameters, one or more performance mode BIOS configurations can be packaged and transferred to a memory of a BMC in the form of one or more configuration payloads. The BIOS Setup Utility can display all configuration payloads, such as listed by the type of performance mode (e.g., “Boot Speed Performance Mode” and “OS Installation Performance Mode”), that are available in the BMC memory and allow a user to overwrite the memory containing the current BIOS configuration with a selected configuration payload.Type: GrantFiled: January 18, 2022Date of Patent: March 26, 2024Assignee: QUANTA COMPUTER INC.Inventors: Lung-Chih Chen, Tian-You Chen, Ting-Wei Chien, Chao-Kai Huang
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Patent number: 11929319Abstract: Integrated fan-out packages and methods of forming the same are disclosed. An integrated fan-out package includes two dies, an encapsulant, a first metal line and a plurality of dummy vias. The encapsulant is disposed between the two dies. The first metal line is disposed over the two dies and the encapsulant, and electrically connected to the two dies. The plurality of dummy vias is disposed over the encapsulant and aside the first metal line.Type: GrantFiled: July 22, 2021Date of Patent: March 12, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ching-Yu Huang, Han-Ping Pu, Ming-Kai Liu, Ting-Chu Ko, Yung-Ping Chiang, Chang-Wen Huang, Yu-Sheng Hsieh
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Patent number: 11851585Abstract: A polishing composition includes an abrasive; a pH adjuster; a barrier film removal rate enhancer; a low-k removal rate inhibitor; an azole-containing corrosion inhibitor; and a hard mask removal rate enhancer. A method of polishing a substrate includes the steps of: applying the polishing composition described herein to a surface of a substrate, wherein the surface comprises ruthenium or a hard mask material; and bringing a pad into contact with the surface of the substrate and moving the pad in relation to the substrate.Type: GrantFiled: August 4, 2022Date of Patent: December 26, 2023Assignee: Fujifilm Electronic Materials U.S.A., Inc.Inventors: Ting-Kai Huang, Tawei Lin, Bin Hu, Liqing Wen, Yannan Liang
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Publication number: 20230365776Abstract: Regenerated foamed particles, and a regenerated foamed and molded body made from same. The regenerated foamed particles are made by melting and foaming regenerated TPU particles. The regenerated TPU particles are formed by melting and pelletizing a recycled composition which contains 100 parts by weight of scraps of a waste ETPU molded body and 0 to 20 parts by weight of a TPU prepolymer. The regenerated TPU particles have a viscosity of 1,000 to 9,000 poises measured at 170° C. according to the JISK7311 method.Type: ApplicationFiled: September 29, 2020Publication date: November 16, 2023Inventors: Ya-Chi Wang, Ting--Kai Huang
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Publication number: 20230203343Abstract: A polishing composition includes an abrasive; a pH adjuster; a barrier film removal rate enhancer; a low-k removal rate inhibitor; an azole-containing corrosion inhibitor; and a hard mask removal rate enhancer. A method of polishing a substrate includes the steps of: applying the polishing composition described herein to a surface of a substrate, wherein the surface comprises ruthenium or a hard mask material; and bringing a pad into contact with the surface of the substrate and moving the pad in relation to the substrate.Type: ApplicationFiled: August 4, 2022Publication date: June 29, 2023Inventors: Ting-Kai Huang, Tawei Lin, Bin Hu, Liqing Wen, Yannan Liang
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Publication number: 20230135325Abstract: A polishing composition includes an anionic abrasive, a pH adjuster a low-k removal rate inhibitor, a ruthenium removal rate enhancer, and water. A method of polishing a substrate includes the steps of: applying the polishing composition described herein to a surface of a substrate, wherein the surface comprises ruthenium or a hard mask material; and bringing a pad into contact with the surface of the substrate and moving the pad in relation to the substrate.Type: ApplicationFiled: October 21, 2022Publication date: May 4, 2023Inventors: Yannan Liang, Bin Hu, Abhudaya Mishra, Ting-Kai Huang, Yibin Zhang, James Johnston, James McDonough
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Publication number: 20230052829Abstract: This disclosure relates to a composition that includes at least one first ruthenium removal rate enhancer; at least one copper removal rate inhibitor; at least one low-k removal rate inhibitor; and an aqueous solvent.Type: ApplicationFiled: July 28, 2022Publication date: February 16, 2023Inventors: Ting-Kai Huang, Bin Hu, Yannan Liang, Hong Piao
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Patent number: 11505718Abstract: A slurry for polishing surfaces or substrates that at least partially comprise ruthenium and copper, wherein the slurry includes an alkali hydroxide, oxygenated halogen compound, and a halogen alkyl benzotriazole. The slurry may further include abrasive, acid(s), and, optionally, an alkoxylated alcohol. With these components, the slurry exhibits a high ruthenium to copper removal rate ratio.Type: GrantFiled: May 12, 2021Date of Patent: November 22, 2022Assignee: FUJIFILM ELECTRONIC MATERIALS U.S.A., INC.Inventors: David (Tawei) Lin, Bin Hu, Liqing (Richard) Wen, Yannan Liang, Ting-Kai Huang
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Patent number: 11414568Abstract: A polishing composition includes an abrasive; a pH adjuster; a barrier film removal rate enhancer; a low-k removal rate inhibitor; an azole-containing corrosion inhibitor; and a hard mask removal rate enhancer. A method of polishing a substrate includes the steps of: applying the polishing composition described herein to a surface of a substrate, wherein the surface comprises ruthenium or a hard mask material; and bringing a pad into contact with the surface of the substrate and moving the pad in relation to the substrate.Type: GrantFiled: February 8, 2021Date of Patent: August 16, 2022Assignee: Fujifilm Electronic Materials U.S.A., Inc.Inventors: Ting-Kai Huang, Tawei Lin, Bin Hu, Liqing Wen, Yannan Liang
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Publication number: 20220195241Abstract: A polishing composition includes at least one abrasive, at least one organic acid, at least one anionic surfactant comprising at least a phosphate, at least one phosphonic acid compound having a molecular weight below 500 g/mol, at least one azole containing compound, at least one alkylamine compound having a 6-24 carbon alkyl chain, and an aqueous solvent, and optionally, a pH adjuster.Type: ApplicationFiled: December 10, 2021Publication date: June 23, 2022Applicant: FUJIFILM ELECTRIC MATERIALS U.S.A., INC.Inventors: Yannan Liang, Bin Hu, Ting-Kai Huang, Shu-Wei Chang, Liqing (Richard) Wen
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Publication number: 20220162478Abstract: The compositions of the present disclosure polish surfaces or substrates that at least partially include ruthenium. The composition includes a synergistic combination of ammonia and oxygenated halogen compound. The composition may further include abrasive and acid(s). A polishing composition for use on ruthenium materials may include ammonia, present in an amount of 0.01 wt % to 10 wt %, based on the total weight of the composition; hydrogen periodate, present in an amount of 0.01 wt % to 10 wt %, based on the total weight of the composition; silica, present in an amount of 0.01 wt % to 12 wt %, based on the total weight of the composition; and organic sulfonic add, present in an amount of 0.01 wt % to 10 wt %, based on the total weight of the composition, wherein the pH of the composition is between 6 and 8.Type: ApplicationFiled: February 11, 2022Publication date: May 26, 2022Applicant: FUJIFILM ELECTRONIC MATERIALS U.S.A., INC.Inventors: David (Tawei) Lin, Bin Hu, Liqing (Richard) Wen, Yannan Liang, Ting-Kai Huang
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Patent number: 11279850Abstract: The compositions of the present disclosure polish surfaces or substrates that at least partially include ruthenium. The composition includes a synergistic combination of ammonia and oxygenated halogen compound. The composition may further include abrasive and acid(s). A polishing composition for use on ruthenium materials may include ammonia, present in an amount of 0.01 wt % to 10 wt %, based on the total weight of the composition; hydrogen periodate, present in an amount of 0.01 wt % to 10 wt %, based on the total weight of the composition; silica, present in an amount of 0.01 wt % to 12 wt %, based on the total weight of the composition; and organic sulfonic add, present in an amount of 0.01 wt % to 10 wt %, based on the total weight of the composition, wherein the pH of the composition is between 6 and 8.Type: GrantFiled: March 12, 2019Date of Patent: March 22, 2022Assignee: FUJIFILM ELECTRONIC MATERIALS U.S.A., INC.Inventors: David (Tawei) Lin, Bin Hu, Liqing (Richard) Wen, Yannan Liang, Ting-Kai Huang
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Publication number: 20210301177Abstract: This disclosure features a polishing composition that includes at least one abrasive; at least one first corrosion inhibitor that includes a phosphate or a phosphonate group; at least one complexing agent; at least one second corrosion inhibitor that is at least one azole compound; and optionally a pH adjuster.Type: ApplicationFiled: March 29, 2021Publication date: September 30, 2021Inventors: James McDonough, Ting-Kai Huang, Yannan Liang, Shu-Wei Chang, Sung Tsai Lin, Liqing Wen
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Publication number: 20210261822Abstract: A slurry for polishing surfaces or substrates that at least partially comprise ruthenium and copper, wherein the slurry includes an alkali hydroxide, oxygenated halogen compound, and a halogen alkyl benzotriazole. The slurry may further include abrasive, acid(s), and, optionally, an alkoxylated alcohol. With these components, the slurry exhibits a high ruthenium to copper removal rate ratio.Type: ApplicationFiled: May 12, 2021Publication date: August 26, 2021Applicant: FUJIFILM ELECTRONIC MATERIALS U.S.A., INC.Inventors: David (Tawei) Lin, Bin Hu, Liqing (Richard) Wen, Yannan Liang, Ting-Kai Huang
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Publication number: 20210253904Abstract: A polishing composition, includes an abrasive; a pH adjuster; a barrier film removal rate enhancer; a low-k removal rate inhibitor; an azole-containing corrosion inhibitor; and a ruthenium removal rate enhancer. A method of polishing a substrate includes the steps of: applying the polishing composition described herein to a surface of a substrate, wherein the surface comprises ruthenium or a hard mask material; and bringing a pad into contact with the surface of the substrate and moving the pad in relation to the substrate.Type: ApplicationFiled: February 8, 2021Publication date: August 19, 2021Inventors: Ting-Kai Huang, Tawei Lin, Bin Hu, Liqing Wen, Yannan Liang
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Publication number: 20210253903Abstract: A polishing composition includes an abrasive; a pH adjuster; a barrier film removal rate enhancer; a low-k removal rate inhibitor; an azole-containing corrosion inhibitor; and a hard mask removal rate enhancer. A method of polishing a substrate includes the steps of: applying the polishing composition described herein to a surface of a substrate, wherein the surface comprises ruthenium or a hard mask material; and bringing a pad into contact with the surface of the substrate and moving the pad in relation to the substrate.Type: ApplicationFiled: February 8, 2021Publication date: August 19, 2021Inventors: Ting-Kai Huang, Tawei Lin, Bin Hu, Liqing Wen, Yannan Liang