Abstract: The invention relates to a composition for promoting the growth of legumes. The composition includes auxin, choline chloride and ?-aminobutyric acid (GABA). The invention also relates to a method for promoting the growth of legumes.

Abstract: A method and an apparatus for detecting a parking place and a direction angle of the parking place, a device, a vehicle, and a computer readable storage medium are provided. The method includes: obtaining a to-be-detected image; identifying corner points of a parking space in the to-be-detected image and cropping the to-be-detected image based on the corner points of the parking space to obtain a candidate parking space image; and performing detection by using a pre-trained parking space detection model based on the candidate parking space image to obtain a parking space detection result, where the parking space detection result indicates whether the candidate parking space image represents a real parking space, and in a case that the candidate parking space image represents the real parking space, the parking space detection result further includes a direction angle of the parking space.

Abstract: A control device is provided. A key structure of the control device includes a keycap, an optical film layer and a membrane switch. A protrusion structure is formed on the optical film layer or the membrane switch. When the keycap is pressed down by the user, the arrangement of the protrusion structure can facilitate the user to trigger the underlying membrane switch more precisely.

Abstract: Methods of detecting unknown genetic modifications in a DNA sample from an organism are disclosed.

Abstract: A method and a system for audiovisual signal synchronization are provided. The method is adapted to an audiovisual system. When the audiovisual system is in operation, a circuit for distributed audiovisual synchronization-calibration is provided for acquiring delay information reported by various audiovisual circuit modules that are in charge of processing audiovisual signals. Accordingly, the audiovisual synchronization processing system that is disposed in the audiovisual system to synchronize the audiovisual signals can obtain a time difference between audio signals and video signals. When processing audio and video data, the audiovisual system can utilize the time difference to synchronize the audio signals and the video signals, and then output an audiovisual content.

Abstract: A method of forming a semiconductor device includes the following steps. First of all, a substrate is provided, and a dielectric layer is formed on the substrate. Then, at least one trench is formed in the dielectric layer, to partially expose a top surface of the substrate. The trench includes a discontinuous sidewall having a turning portion. Next, a first deposition process is performed, to deposit a first semiconductor layer to fill up the trench and to further cover on the top surface of the dielectric layer. Following these, the first semiconductor layer is laterally etched, to partially remove the first semiconductor layer till exposing the turning portion of the trench. Finally, a second deposition is performed, to deposit a second semiconductor layer to fill up the trench.

Abstract: A method of forming a semiconductor device includes the following steps. First of all, a substrate is provided, and a dielectric layer is formed on the substrate. Then, at least one trench is formed in the dielectric layer, to partially expose a top surface of the substrate. The trench includes a discontinuous sidewall having a turning portion. Next, a first deposition process is performed, to deposit a first semiconductor layer to fill up the trench and to further cover on the top surface of the dielectric layer. Following these, the first semiconductor layer is laterally etched, to partially remove the first semiconductor layer till exposing the turning portion of the trench. Finally, a second deposition is performed, to deposit a second semiconductor layer to fill up the trench.

Abstract: A method of forming a semiconductor device includes the following steps. First of all, a substrate is provided, and a dielectric layer is formed on the substrate. Then, at least one trench is formed in the dielectric layer, to partially expose a top surface of the substrate. The trench includes a discontinuous sidewall having a turning portion. Next, a first deposition process is performed, to deposit a first semiconductor layer to fill up the trench and to further cover on the top surface of the dielectric layer. Following these, the first semiconductor layer is laterally etched, to partially remove the first semiconductor layer till exposing the turning portion of the trench. Finally, a second deposition is performed, to deposit a second semiconductor layer to fill up the trench.

Abstract: A semiconductor device includes a substrate having at least a trench formed therein. A conductive material fills a lower portion of the trench. A barrier layer is between the conductive material and the substrate. An insulating layer is in the trench and completely covers the conductive material and the barrier layer, wherein a portion of the insulating layer covering the barrier layer has a bird's peak profile.

Abstract: A method of forming a semiconductor device includes the following steps. First of all, a substrate is provided, and a dielectric layer is formed on the substrate. Then, at least one trench is formed in the dielectric layer, to partially expose a top surface of the substrate. The trench includes a discontinuous sidewall having a turning portion. Next, a first deposition process is performed, to deposit a first semiconductor layer to fill up the trench and to further cover on the top surface of the dielectric layer. Following these, the first semiconductor layer is laterally etched, to partially remove the first semiconductor layer till exposing the turning portion of the trench. Finally, a second deposition is performed, to deposit a second semiconductor layer to fill up the trench.

Abstract: A method of forming a semiconductor device includes the following steps. First of all, a substrate is provided, and a dielectric layer is formed on the substrate. Then, at least one trench is formed in the dielectric layer, to partially expose a top surface of the substrate. The trench includes a discontinuous sidewall having a turning portion. Next, a first deposition process is performed, to deposit a first semiconductor layer to fill up the trench and to further cover on the top surface of the dielectric layer. Following these, the first semiconductor layer is laterally etched, to partially remove the first semiconductor layer till exposing the turning portion of the trench. Finally, a second deposition is performed, to deposit a second semiconductor layer to fill up the trench.

Abstract: A method, an electronic apparatus and a recording medium for automatically configuring a plurality of sensing devices, applicable to an electronic apparatus having at least one sensor and a communication device, is provided. In the method, a first sensing data is detected by using the at least one sensor. A plurality of second sensing data is respectively received from the plurality of sensing devices by using the communication device. The first sensing data and each of the second sensing data are analyzed to obtain a moving pattern of the electronic apparatus and each of the sensing devices. A position on a user's body of each of the sensing devices is configured by comparing the moving patterns with at least one movement model.

Abstract: Methods of detecting unknown genetic modifications in a DNA sample from an organism are disclosed.

Abstract: A semiconductor device includes a substrate having at least a trench formed therein. A conductive material fills a lower portion of the trench. A barrier layer is between the conductive material and the substrate. An insulating layer is in the trench and completely covers the conductive material and the barrier layer, wherein a portion of the insulating layer covering the barrier layer has a bird's peak profile.

Abstract: A method for fabricating semiconductor device includes the steps of: providing a substrate having a memory region and a periphery region; forming a first trench and a second trench in substrate on the memory region, wherein a width of the second trench is greater than a width of the first trench; forming a first liner, a second liner, and a third liner in the first trench and the second trench; performing a surface treatment process to lower stress of the third liner; and planarizing the third liner, the second liner, and the first liner to form a first isolation structure and a second isolation structure.

Abstract: A semiconductor device and a method of forming the same are disclosed. First, a substrate having a main surface is provided. At least a trench is formed in the substrate. A barrier layer is formed in the trench and a conductive material is formed on the barrier layer and filling up the trench. The barrier layer and the conductive material are then recessed to be lower than the upper surface of the substrate. After that, an oxidation process is performed to oxidize the barrier layer and the conductive material thereby forming an insulating layer.

Abstract: A method for fabricating semiconductor device includes the steps of: providing a substrate having a memory region and a periphery region; forming a first trench and a second trench in substrate on the memory region, wherein a width of the second trench is greater than a width of the first trench; forming a first liner, a second liner, and a third liner in the first trench and the second trench; performing a surface treatment process to lower stress of the third liner; and planarizing the third liner, the second liner, and the first liner to form a first isolation structure and a second isolation structure.

Abstract: A method for fabricating semiconductor device includes the steps of: providing a substrate having a memory region and a periphery region; forming a first trench and a second trench in substrate on the memory region, wherein a width of the second trench is greater than a width of the first trench; forming a first liner, a second liner, and a third liner in the first trench and the second trench; performing a surface treatment process to lower stress of the third liner; and planarizing the third liner, the second liner, and the first liner to form a first isolation structure and a second isolation structure.

Abstract: A method of manufacturing a semiconductor device is provided, which includes the steps of providing a capacitor structure, forming a conductive layer on the capacitor structure, performing a hydrogen doping process to the conductive layer, forming a metal layer on the conductive layer after the hydrogen doping process, and patterning the metal layer and the conductive layer to forma top electrode plate.

Abstract: A method of forming a semiconductor device includes the following steps. First of all, a substrate is provided, and a dielectric layer is formed on the substrate. Then, at least one trench is formed in the dielectric layer, to partially expose a top surface of the substrate. The trench includes a discontinuous sidewall having a turning portion. Next, a first deposition process is performed, to deposit a first semiconductor layer to fill up the trench and to further cover on the top surface of the dielectric layer. Following these, the first semiconductor layer is laterally etched, to partially remove the first semiconductor layer till exposing the turning portion of the trench.