Abstract: A semiconductor device, includes a channel region, and a source/drain region adjacent to the channel region. The source/drain region includes a first epitaxial layer, a second epitaxial layer epitaxially formed on the first epitaxial layer and a third epitaxial layer epitaxially formed on the second epitaxial layer, and the first epitaxial layer is made of SiAs.

Abstract: The disclosure provides a time-lapse photographic device. The time-lapse photographic device includes a camera module, a drive module, an environment detection module, and a control unit. The drive module is connected to the camera module to drive the camera module to rotate. The environment detection module is configured to detect an external environment of the time-lapse photographic device to generate an environment detection signal. The control unit is electrically connected to the camera module, the drive module, and the environment detection module. The control unit generates, according to a shooting stop parameter, a plurality of intermittent drive signals to control the drive module, and controls the camera module to shoot at intervals of the drive signals. The control unit adjusts operation of at least one of the camera module and the drive module according to the environment detection signal.

Abstract: A complex optical proximity sensor includes a substrate, a light emitter coupled to the substrate, an application-specific integrated circuit chip coupled to the substrate, a proximity sensor embedded in the application-specific integrated circuit chip, a barrier disposed between the application-specific integrated circuit chip and the light emitter, and an ambient light detection chip manufactured in advance and then coupled to the application-specific integrated circuit chip thereon with a pre-determined height. The elements are disposed within a limited area of an aperture and, with a manufacturing method of the complex optical proximity sensor, the detection angle of the ambient light is thereby maximized and the detection angle of the proximity sensor is thereby minimized.

Abstract: A complex optical proximity sensor has a vertical-cavity surface emitting laser (VCSEL), an ambient lights detection chip, and a proximity sensor (PS) arranged in linear alignment to form a self-integrated barrier within the structure. The PS only receives lights with a first wavelength and a first energy and the ambient lights detection chip solely receives lights with a second wavelength and a second energy to prevent the VCSEL from interfering with the PS. Meanwhile, the arrangement has the ambient lights detection chip disposed in a middle section of an oblong opening to maximize a detection angle of ambient lights.

Abstract: A complex optical proximity sensor includes a substrate, a light emitter coupled to the substrate, an application-specific integrated circuit chip coupled to the substrate and embedded in a proximity sensor, a barrier disposed between the application-specific integrated circuit chip and the light emitter, and an ambient light detection chip manufactured in advance and then coupled to the application-specific integrated circuit chip thereon with a pre-determined height. The elements are disposed within a limited area of an aperture and, with a manufacturing method of the complex optical proximity sensor, the detection angle of the ambient light is thereby maximized and the detection angle of the proximity sensor is thereby minimized.

Abstract: A structure of an integrated crystal oscillator package has a first quartz crystal resonator, a second quartz crystal resonator, and application-specific integrated circuit chip (ASIC) combined in a package. The ASIC has a switch control for receiving audio formats of 44.1 kHz and 48 kHz with different hi-fidelity (hi-fi). The first quartz crystal resonator has a first clock rate corresponding to the 44.1 kHz frequency and the second quartz crystal resonator has a second clock rate corresponding to the 48 kHz frequency to be switched by the present invention in operation.

Abstract: A structure of an integrated crystal oscillator package has a first quartz crystal resonator, a second quartz crystal resonator, and application-specific integrated circuit chip (ASIC) combined in a package. The ASIC has a switch control for receiving audio formats of 44.1 kHz and 48 kHz with different hi-fidelity (hi-fi). The first quartz crystal resonator has a first clock rate corresponding to the 44.1 kHz frequency and the second quartz crystal resonator has a second clock rate corresponding to the 48 kHz frequency to be switched by the present invention in operation.

Abstract: A complex optical proximity sensor includes a substrate, a light emitter coupled to the substrate, an application-specific integrated circuit chip coupled to the substrate with a proximity sensor thereon, a barrier disposed between the application-specific integrated circuit chip and the light emitter, and an ambient light detection chip manufactured in advance and then coupled to the application-specific integrated circuit chip thereon with a pre-determined height. Also, with the manufacturing method of the complex optical proximity sensor, the detection angle of the ambient light is thereby maximized and the one of the proximity sensor is thereby minimized.

Abstract: A method of configuring multi-level packet transmission paths in a wireless sensor network includes an initial configuration procedure and an optimization procedure. The wireless sensor network includes a plurality of sensor units and a processing unit that configures the multi-level packet transmission paths among the sensor units for transmitting a to-be-transmitted packet group. The initial configuration procedure configures the packet transmission paths among the sensor units for transmitting the to-be-transmitted packet group which includes a plurality of packets under a condition that a number of the sensor units is not increased. The optimization procedure adjusts the packet transmission paths, resulting from the initial configuration procedure, among the sensor units for transmission of a portion of packets in the to-be-transmitted packet group so as to reduce the number of the sensor units.