Abstract: A chip package with electromagnetic interference (EMI) shielding layer and a method of manufacturing the same are provided. The chip package includes a chip, a redistribution layer (RDL), an insulating layer, and an electromagnetic interference (EMI) shielding layer. A peripheral wall is formed around at least one first opening of the insulating layer for enclosing the first opening and a flat portion is disposed around the peripheral wall while a level of the flat portion is lower than a level of the peripheral wall. The flat portion of the insulating layer is covered with the EMI shielding layer which is isolated and electrically insulated from a pad in the first opening by the peripheral wall of the insulating layer. Thereby problems of the chip including fast increase in temperature and electromagnetic interference can be solved effectively.

Abstract: The present disclosure includes a voltage provision circuit. In one aspect of the present disclosure, a voltage provision circuit is disclosed. The voltage provision circuit includes a first NMOS transistor gated with a first control signal and sourced with a ground voltage. The voltage provision circuit includes a second NMOS transistor gated with a second control signal complementary to the first control signal and sourced with the ground voltage. The voltage provision circuit includes a first PMOS transistor sourced with a first supply voltage. The voltage provision circuit includes a second PMOS transistor sourced with the first supply voltage. The voltage provision circuit includes a voltage modulation circuit, coupled between the first to second PMOS transistors and the first to second NMOS transistors, that is configured to provide a first intermediate signal based on the first and second control signals.

Abstract: An interconnect structure on a semiconductor die includes: a lower conductive layer; an upper conductive layer disposed above the lower conductive layer; and a VIA disposed between the lower conductive layer and the upper conductive layer. The VIA includes: a primary interconnect structure and a sacrificial stress barrier ring disposed around the primary interconnect structure and separated a distance from the primary interconnect structure. A fabrication method for the interconnect structure includes: forming a dielectric layer over a lower conductive layer; patterning photoresist (PR) layer over the dielectric layer to define a location for a plurality of VIA trenches, wherein the patterning includes patterning the PR layer to provide a center opening for the VIA trenches that is surrounded by a ring opening for the VIA trenches, wherein the center opening and the ring opening are spaced apart.

Abstract: Apparatuses, systems, and techniques are presented to generate digital content. In at least one embodiment, one or more neural networks are used to generate video information based at least in part upon voice information and a combination of image features and facial landmarks corresponding to one or more images of a person.

Abstract: This disclosure features novel cell lines and related methods for producing human natural killer (NK) cells, compositions of the NK cells produced by these methods, and uses thereof.

Abstract: A super resolution (SR) image generation circuit includes an image scale-up circuit, a stable SR processing circuit, a generative adversarial network (GAN) processing circuit, and a configurable basic block pool circuit. The image scale-up circuit is arranged to receive and process an input image to generate a scaled-up image. The stable SR processing circuit is arranged to receive a feature map of the input image to generate a stable delta value. The GAN processing circuit is arranged to receive the feature map to generate a GAN delta value. The configurable basic block pool circuit is arranged to dynamically configure a plurality of basic blocks according to a depth requirement of the input image, to generate a configuration result. The SR image generation circuit generates an SR image according to the scaled-up image, the stable delta value, and the GAN delta value.

Abstract: Disclosed is an air microorganism enrichment device in farms, and relates to the technical field of air microorganism collection.

Abstract: An image processing circuit includes a receiving circuit, a transmitting circuit, a first asynchronous handshake circuit, a super resolution scale-up model and a second asynchronous handshake circuit. The receiving circuit is arranged to receive an input image with a first pixel clock frequency. The first asynchronous handshake circuit is arranged to receive the input image from the receiving circuit according to a receiving timing. The super resolution scale-up model is arranged to scale up the input image to generate an output image with a second pixel clock frequency. The second asynchronous handshake circuit is arranged to output the output image to the transmitting circuit according to a transmitting timing to transmit the output image, wherein the first asynchronous handshake circuit, the super resolution scale-up model, and the second asynchronous handshake circuit operate at a clock frequency independent of the first pixel clock frequency and the second pixel clock frequency.

Abstract: A premixer assembly for a combustor includes: at least one ring of premixers, each premixer having a central axis, an annular peripheral wall surrounding a centerbody, and at least one swirler disposed between the centerbody and the peripheral wall, wherein the peripheral wall defines an inlet area of the premixer; and a lip extending forward along the central axis from the peripheral wall, the lip extending at an oblique angle to the axis of symmetry.

Abstract: A siloxane monomer, a contact lens composition, and a contact lens are respectively provided. The siloxane monomer is represented by Chemical Formula 1 below: where R1 is H or CH3; R2 is NHR3, N(R3)2, OR3, SR3, or R3 is and R4 is H or an alkyl group having a carbon chain length of C1 to C6; where x is greater than or equal to 0, y is greater than or equal to 1, and z is greater than or equal to 0.

Abstract: A multi-shot moulding part structure includes a first structural part, an ink decoration layer, and a second structural part. The first structural part has a first area surface, a second area surface, and a joining surface located on the second area surface. The joining surface is non-parallel to the second area surface. The ink decoration layer is spread on the first area surface and the second area surface, but not on the joining surface. The second structural part is combined with the first structural part and covers the second area surface. The second structural part touches the joining surface. By the second structural part touching the joining surface of the first structural part that is not coated with the ink decoration layer, the structural bonding strength between the first structural part and the second structural part is enhanced.

Abstract: Embodiments maintain a data pool that includes heterogeneous data sets, and receiving a first data batch of a data set from a data source into the data pool. Embodiments determine a current state of the data set based on a data set state diagram including a plurality of data set states, and identify a condition of the first data batch. Embodiments further set a data batch state for the first data batch, based on a data batch state diagram, and update the data batch state of a prior data batch received before the first data batch, based on the condition of the first data batch. Embodiments additionally transition the data set state diagram, based on the condition of the first data batch, to an updated data set state. Embodiments maintain a data state repository storing the data set state for each of the plurality of heterogeneous data sets.

Abstract: A hybrid power conversion circuit includes a high-side switch, a low-side switch, a transformer, a resonance tank, a first switch, a second switch, a first synchronous rectification switch, a second synchronous rectification switch, and a third switch. The resonance tank has an external inductor, an external capacitance, and an internal inductor. The first switch is connected to the external inductor. The second switch and a first capacitance form a series-connected path, and is connected to the external capacitance. The first and second synchronous rectification switches are respectively coupled to a first winding and a second winding. The third switch is connected to the second synchronous rectification switch. When an output voltage is less than a voltage interval, the hybrid power conversion circuit operates in a hybrid flyback conversion mode, and otherwise the hybrid power conversion circuit operates in a resonance conversion mode.

Abstract: A heat-shrinkable polyester film made of a polyester-forming resin composition includes a recycled material, and has an exothermic crystallization peak and an endothermic melting peak which are determined via differential scanning calorimetry, and which satisfy relationships of T2?T1?68° C. and T3?T2?78° C., where T1 represents an onset point of the exothermic crystallization peak, T2 represents an end point of the exothermic crystallization peak and an onset point of the endothermic melting peak, and T3 represents an end point of the endothermic melting peak. A method for manufacturing the heat-shrinkable polyester film is also disclosed.

Abstract: A field effect transistor includes a substrate having a transistor forming region thereon; an insulating layer on the substrate; a first graphene layer on the insulating layer within the transistor forming region; an etch stop layer on the first graphene layer within the transistor forming region; a first inter-layer dielectric layer on the etch stop layer; a gate trench recessed into the first inter-layer dielectric layer and the etch stop layer within the transistor forming region; a second graphene layer on interior surface of the gate trench; a gate dielectric layer on the second graphene layer and on the first inter-layer dielectric layer; and a gate electrode on the gate dielectric layer within the gate trench.

Abstract: An ultrasonic transducer that is configured to selectively operate at first or second resonant frequency during wire bonding operations includes an elongated transducer body an aperture for mounting a piezoelectric driver stack for driving the ultrasonic transducer to operate at the first or second resonant frequency and a mounting flange connected to the transducer body at a first nodal vibration region of the transducer body when the ultrasonic transducer is operated at the first resonant frequency. The elongated transducer has a length substantially equal to two wavelengths of a first oscillatory wave that is transmitted along the length of the transducer body when the transducer is operated at the first resonant frequency, and substantially equal to a half wavelength of a second oscillatory wave that is transmitted along the length of the transducer body when the transducer is operated at the second resonant frequency.

Abstract: A method includes designing a plurality of cells for a semiconductor device, wherein designing the plurality of cells comprises reserving a routing track of a plurality of routing tracks within each of the plurality of cells, wherein each of the plurality of cells comprises signal lines, and the reserved routing track is free of the signal lines. The method includes placing a first cell and a second cell of the plurality of cells in a layout of the semiconductor device. The method includes determining whether any power rails overlap with any of the plurality of routing tracks other than the reserved routing track in the second cell. The method includes adjusting a distance between the first cell and the second cell in response to a determination that at least one power rail overlaps with at least one routing track other than the reserved routing track.

Abstract: A chip package which includes a glass fiber substrate made of FR-4 fiberglass is provided. The chip package further includes a substrate pad which is a stacked metal structure with a certain thickness and composed of a nickel layer, a palladium layer, and a gold layer, or a nickel layer and a gold layer stacked over at least one first circuit layer in turn. A total thickness of the substrate pad is 3.15-5.4 ?m. The glass fiber substrate and the substrate pad can bear positive pressure generated during wire bonding. Thereby at least one solder joint is formed on the substrate pad precisely and integrally. This helps reduction in material cost for manufacturers.