Abstract: A low-cost, conventional release using low concentrations of HF to overcome the stiction of MEMS structure.

Abstract: An inductively coupled plasma dry etch process can obtain a deep etching profile in a piezoelectric material, such as lithium niobate, with minimum roughness and substantially vertical sidewalls. In addition, quality metal masks can be achieved by employing a hydrogen-plasma treatment prior to the processing steps. Periodic interruption steps can be included in the plasma dry etch procedure followed by a chemical cleaning between each cycle to avoid thermal effect and minimize byproduct redeposition during the long etching process. A deep etching profile in a piezoelectric material, such as a ScxAl1-xN film, can be attained with minimum roughness and substantially vertical sidewalls using wet etching and a patterned mask, where the patterned mask is formed using another mask.

Abstract: A laser eye protection device is described that includes an optically opaque screen that covers both eyes; one or more internal viewing screens on an eye-facing side of the optically opaque screen; and one or more cameras arranged around the optically opaque screen, wherein the one or more cameras are in electrical and data communication with the one or more internal viewing screens and provide a visual representation of surroundings to a user.

Abstract: A method for making a device. The method comprises forming a buffer layer on a substrate; forming a periodically doped layer on the buffer layer; forming one or more wires on the periodically doped layer, the wires being chosen from nanowires and microwires; and introducing porosity into the periodically doped layer to form a porous distributed Bragg reflector (DBR). Various devices that can be made by the method are also disclosed.

Abstract: Methods and apparatus for electrical impedance spectroscopy for non-destructive, real-time, tracking of relative water content and stress responses in plants.

Abstract: Provided is a composite metal-wide-bandgap semiconductor tip for scanning tunneling microscopy and/or scanning tunneling lithography, a method of forming, and a method for using the composite metal-wide-bandgap semiconductor tip.

Abstract: Provided is a composite metal-wide-bandgap semiconductor tip for scanning tunneling microscopy and/or scanning, tunneling lithography, a method of forming, and a method for using the composite metal-wide-bandgap semiconductor tip.

Abstract: Nanowires that may be utilized in microscopy, for example atomic force microscopy (AFM), as part of an AFM probe, as well as for other uses, are disclosed. The nanowires may be formed from a Group III nitride such as an epitaxial layer that may be or include gallium nitride, indium nitride, aluminum nitride, and an alloy of these materials. During use of the AFM probe to measure a topography of a test sample surface, the nanowire can activated and caused to lase and emit a light, thereby illuminating the surface with the light. In an implementation, the light can be collected by the AFM probe itself, for example through an optical fiber to which the nanowire is attached.

Abstract: Nanowires that may be utilized in microscopy, for example atomic force microscopy (AFM), as part of an AFM probe, as well as for other uses, are disclosed. The nanowires may be formed from a Group III nitride such as an epitaxial layer that may be or include gallium nitride, indium nitride, aluminum nitride, and an alloy of these materials. During use of the AFM probe to measure a topography of a test sample surface, the nanowire can activated and caused to lase and emit a light, thereby illuminating the surface with the light. In an implementation, the light can be collected by the AFM probe itself, for example through an optical fiber to which the nanowire is attached.

Abstract: Provided is a composite metal-wide-bandgap semiconductor tip for scanning tunneling microscopy and/or scanning, tunneling lithography, a method of forming, and a method for using the composite metal-wide-bandgap semiconductor tip.

Abstract: The present invention is a photovoltaic-thermoelectric solar cell and a method of manufacturing a photovoltaic-thermoelectric solar cell. The solar cell includes a substantially transparent electrode, an organometallic photovoltaic material disposed on the transparent electrode, and a cathode disposed on the organometallic photovoltaic material. The organometallic photovoltaic material may be a porphyrin nanomaterial.