Abstract: A method for manufacturing a metal-semiconductor contact in semiconductor Components is disclosed. There is a relatively high risk of contamination in the course of metal depositions in prior-art methods. In the disclosed method, the actual metal -semiconductor or Schottky contact is produced only after the application of a protective layer system, as a result of which it is possible to use any metals, particularly platinum, without the risk of contamination.

Abstract: Method for manufacturing a semiconductor array, in which a conductive substrate (100), a component region (400), and an insulation layer (200), isolating the component region (400) from the conductive substrate (100), are formed, a trench (700) is etched in the component region (400) as far as the insulation layer (200), then the trench (700) is etched further as far as the conductive substrate (100), the walls (701) of the trench (700) are formed with an insulation material (710), and an electrical conductor (750, 755, 760) is introduced into the trench (700) and connected conductively to the conductive substrate (100), wherein before the trench (700) is etched, a layer sequence comprising a first oxide layer (510), a polysilicon layer (520) on top of the first oxide layer (510), and a second oxide layer (530) on top of the polysilicon layer (520) is applied to the component region (400).

Abstract: Semiconductor array and method for manufacturing a semiconductor array, wherein a conductive substrate (100), an element region (400), and an insulation layer (200), isolating the element region (400) from the conductive substrate (100), are formed, a trench (700) is etched in the element region (400) as far as the insulation layer (200), the trench (700) is etched further in the insulation layer (200) as far as the conductive substrate (100), and within the trench (700), the conductive substrate (100) is at least partially etched to form conductive substrate regions (141, 142, 143, 144, 145, 146), isolated from one another.

Abstract: Semiconductor array, with an element region (400), with a conductive substrate (100), with a buried insulation layer (200), which isolates the element region (400) from the conductive substrate (100), with at least one trench (700), which is filled with an insulation material (710) and which isolates at least one element (1000) in the element region (400) from other elements in the element region (400), with an electrical conductor (750), which is connected conductively to the conductive substrate (100), wherein the electrical conductor (750) is disposed within the trench (700) isolated by the insulation material (710), and wherein the trench (700) is formed within a recess (600) in a surface. Furthermore, a method for manufacturing a semiconductor array is provided.

Abstract: A method for manufacturing a metal-semiconductor contact in semiconductor Components is disclosed. There is a relatively high risk of contamination in the course of metal depositions in prior-art methods. In the disclosed method, the actual metal-semiconductor or Schottky contact is produced only after the application of a protective layer system, as a result of which it is possible to use any metals, particularly platinum, without the risk of contamination.