Patents by Inventor Tobias Hoose

Tobias Hoose has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11630394
    Abstract: Disclosed is a method for lithographically producing a target structure on a non-planar initial structure by exposing a photoresist by means of a lithography beam. In the inventive method, the topography of a surface of the non-planar initial structure is detected. A test parameter for the lithography beam is used and an interaction of the lithography beam with the initial structure and the resultant change in the lithography beam and/or the target structure to be produced are determined. A correction parameter for the lithography beam is determined such that the change in the lithography beam and/or the target structure to be produced that is caused by the interaction of the lithography beam with the initial structure is reduced. The desired target structure on the initial structure is produced by exposing the photoresist by means of the lithography beam using the correction parameter.
    Type: Grant
    Filed: September 10, 2021
    Date of Patent: April 18, 2023
    Assignee: Karlsruhe Institute of Technology
    Inventors: Christian Koos, Tobias Hoose, Philipp Dietrich, Matthias Blaicher, Maria Laura Gödecke, Nicole Lindenmann
  • Publication number: 20210405537
    Abstract: Disclosed is a method for lithographically producing a target structure on a non-planar initial structure by exposing a photoresist by means of a lithography beam. In the inventive method, the topography of a surface of the non-planar initial structure is detected. A test parameter for the lithography beam is used and an interaction of the lithography beam with the initial structure and the resultant change in the lithography beam and/or the target structure to be produced are determined. A correction parameter for the lithography beam is determined such that the change in the lithography beam and/or the target structure to be produced that is caused by the interaction of the lithography beam with the initial structure is reduced. The desired target structure on the initial structure is produced by exposing the photoresist by means of the lithography beam using the correction parameter.
    Type: Application
    Filed: September 10, 2021
    Publication date: December 30, 2021
    Inventors: Christian Koos, Tobias Hoose, Philipp Dietrich, Matthias Blaicher, Maria Laura Gödecke, Nicole Lindenmann
  • Patent number: 11143966
    Abstract: Disclosed is a method for lithographically producing a target structure on a non-planar initial structure by exposing a photoresist by means of a lithography beam. In the inventive method, the topography of a surface of the non-planar initial structure is detected. A test parameter for the lithography beam is used and an interaction of the lithography beam with the initial structure and the resultant change in the lithography beam and/or the target structure to be produced are determined. A correction parameter for the lithography beam is determined such that the change in the lithography beam and/or the target structure to be produced that is caused by the interaction of the lithography beam with the initial structure is reduced. The desired target structure on the initial structure is produced by exposing the photoresist by means of the lithography beam using the correction parameter.
    Type: Grant
    Filed: January 31, 2019
    Date of Patent: October 12, 2021
    Assignee: Karlsruhe Institute of Technology
    Inventors: Christian Koos, Tobias Hoose, Philipp Dietrich, Matthias Blaicher, Maria Laura Gödecke, Nicole Lindenmann
  • Publication number: 20190163067
    Abstract: Disclosed is a method for lithographically producing a target structure on a non-planar initial structure by exposing a photoresist by means of a lithography beam. In the inventive method, the topography of a surface of the non-planar initial structure is detected. A test parameter for the lithography beam is used and an interaction of the lithography beam with the initial structure and the resultant change in the lithography beam and/or the target structure to be produced are determined. A correction parameter for the lithography beam is determined such that the change in the lithography beam and/or the target structure to be produced that is caused by the interaction of the lithography beam with the initial structure is reduced. The desired target structure on the initial structure is produced by exposing the photoresist by means of the lithography beam using the correction parameter.
    Type: Application
    Filed: January 31, 2019
    Publication date: May 30, 2019
    Inventors: Christian Koos, Tobias Hoose, Philipp Dietrich, Matthias Blaicher, Maria Laura Gödecke, Nicole Lindenmann