Patents by Inventor Tobias Schmidutz

Tobias Schmidutz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device including a passivation structure and manufacturing method
    Patent number: 11211303
    Abstract: An embodiment of a semiconductor device includes a semiconductor body having a first main surface. The semiconductor body includes an active device area and an edge termination area at least partly surrounding the active device area. The semiconductor device further includes a contact electrode on the first main surface and electrically connected to the active device area. The semiconductor device further includes a passivation structure on the edge termination area and laterally extending into the active device area. The semiconductor device further includes an encapsulation structure on the passivation structure and covering a first edge of the passivation structure above the contact electrode.
    Type: Grant
    Filed: December 3, 2019
    Date of Patent: December 28, 2021
    Assignee: Infineon Technologies AG
    Inventors: Jens Peter Konrath, Jochen Hilsenbeck, Dethard Peters, Paul Salmen, Tobias Schmidutz, Vice Sodan, Christian Stahlhut, Juergen Steinbrenner, Bernd Zippelius
  • SEMICONDUCTOR DEVICE INCLUDING A PASSIVATION STRUCTURE AND MANUFACTURING METHOD
    Publication number: 20200185297
    Abstract: An embodiment of a semiconductor device includes a semiconductor body having a first main surface. The semiconductor body includes an active device area and an edge termination area at least partly surrounding the active device area. The semiconductor device further includes a contact electrode on the first main surface and electrically connected to the active device area. The semiconductor device further includes a passivation structure on the edge termination area and laterally extending into the active device area. The semiconductor device further includes an encapsulation structure on the passivation structure and covering a first edge of the passivation structure above the contact electrode.
    Type: Application
    Filed: December 3, 2019
    Publication date: June 11, 2020
    Inventors: Jens Peter Konrath, Jochen Hilsenbeck, Dethard Peters, Paul Salmen, Tobias Schmidutz, Vice Sodan, Christian Stahlhut, Juergen Steinbrenner, Bernd Zippelius