Abstract: A power diode comprises a plurality of diode cells (10). Each diode cell (10) comprises a first conductivity type first anode layer (40), a first conductivity type second anode layer (45) having a lower doping concentration than the first anode layer (40) and being separated from an anode electrode layer (20) by the first anode layer (40), a second conductivity type drift layer (50) forming a pn-junction with the second anode layer (45), a second conductivity type cathode layer (60) being in direct contact with the cathode electrode layer (60), and a cathode-side segmentation layer (67) being in direct contact with the cathode electrode layer (30). A material of the cathode-side segmentation layer (67) is a first conductivity type semiconductor, wherein an integrated doping content of the cathode-side, which is integrated along a direction perpendicular to the second main side (102), is below 2·1013 cm?2, or a material of the cathode-side segmentation layer (67) is an insulating material.

Abstract: An integrated gate-commutated thyristor (IGCT) includes a semiconductor wafer having a first main side and a second main side opposite to the first main side and a plurality of first type thyristor cells and second type thyristor cells. The cathode electrode of the first type thyristor cells forms an ohmic contact with the cathode region and the cathode electrode of the second type thyristor cells is insulated from the cathode region. A predefined percentage of second type thyristor cells of the overall amount of first type thyristor cells and second type thyristor cells in a segment ring is greater than 0% and less than or equal to 75%.

Abstract: A turn-off power semiconductor device includes first and second thyristor cells, a common gate contact and a plurality of stripe-shaped electrically conductive first gate runners. Each first gate runner has a first end portion, a second end portion opposite to the first end portion and a first connecting portion connecting the first end portion and the second end portion. The first end portion is directly connected to the common gate contact. The first gate electrode layer portions of all first thyristor cells are implemented as a first gate electrode layer. The second gate electrode layer portions of all second thyristor cells are implemented as a second gate electrode layer. The first gate electrode layer is directly connected to the common gate contact. At least the first connecting portion of each first gate runner is separated from the first gate electrode layer.

Abstract: A power semiconductor device includes a semiconductor wafer, a thyristor structure, and a bipolar junction transistor. The thyristor structure includes a first emitter layer of a first conductivity type adjacent the first main side, a first base layer of a second conductivity type, a second base layer of the first conductivity type, a second emitter layer of the second conductivity type, a gate electrode, a first main electrode, and a second main electrode arranged. The bipolar junction transistor includes a base electrode electrically separated from the gate electrode, a third main electrode arranged on the first main side and a fourth main electrode arranged on the second main side. The first main electrode is electrically connected to the third main electrode and the second main electrode is electrically connected to the fourth main electrode.

Abstract: An integrated gate-commutated thyristor (IGCT) includes a semiconductor wafer having a first main side and a second main side opposite to the first main side and a plurality of first type thyristor cells and second type thyristor cells. The cathode electrode of the first type thyristor cells forms an ohmic contact with the cathode region and the cathode electrode of the second type thyristor cells is insulated from the cathode region. A predefined percentage of second type thyristor cells of the overall amount of first type thyristor cells and second type thyristor cells in a segment ring is greater than 0% and less than or equal to 75%.

Abstract: A reverse conducting power semiconductor device includes a plurality of thyristor cells and a freewheeling diode are integrated in a semiconductor wafer. The freewheeling diode includes a diode anode layer, a diode anode electrode, a diode cathode layer, and a diode cathode electrode. The diode cathode layer includes diode cathode layer segments, each of which is stripe-shaped and arranged within a corresponding stripe-shaped first diode anode layer segment such that a longitudinal main axis of each diode cathode layer segment extends along the longitudinal main axis of the corresponding one of the first diode anode layer segments.

Abstract: A power diode comprises a plurality of diode cells (10). Each diode cell (10) comprises a first conductivity type first anode layer (40), a first conductivity type second anode layer (45) having a lower doping concentration than the first anode layer (40) and being separated from an anode electrode layer (20) by the first anode layer (40), a second conductivity type drift layer (50) forming a pn-junction with the second anode layer (45), a second conductivity type cathode layer (60) being in direct contact with the cathode electrode layer (60), and a cathode-side segmentation layer (67) being in direct contact with the cathode electrode layer (30). A material of the cathode-side segmentation layer (67) is a first conductivity type semiconductor, wherein an integrated doping content of the cathode-side, which is integrated along a direction perpendicular to the second main side (102), is below 2·1013 cm?2, or a material of the cathode-side segmentation layer (67) is an insulating material.

Abstract: A power semiconductor device includes a semiconductor wafer having a junction and a junction termination laterally surrounding the junction. A protection layer covers the lateral side of the semiconductor wafer and covers the second main side at least in an area of the junction termination. A first metal disk is arranged on the first main side to cover the first main side of the semiconductor wafer. An interface between the first metal disk and the semiconductor wafer is a free floating interface. A metal layer sandwiched between the first metal disk and the semiconductor wafer.

Abstract: A bypass thyristor device includes a semiconductor device providing a thyristor with a cathode electrode on a cathode side, a gate electrode on the cathode side surrounded by the cathode electrode and an anode electrode on an anode side; an electrically conducting cover element arranged on the cathode side and in electrical contact with the cathode electrode on a contact side; and a gate contact element electrically connected to the gate electrode and arranged in a gate contact opening in the contact side of the cover element; wherein the cover element has a gas expansion volume in the contact side facing the cathode side, which gas expansion volume is interconnected with the gate contact opening for gas exchange.

Abstract: The invention relates to a semi-fabricated switching device comprising a semiconductor element and a housing comprising a spring system with a ring-shaped washer laterally surrounding the semiconductor element for clamping the semiconductor element between two pole pieces. The washer is deflectable between the pole pieces by a first deflection element, which contacts the washer in a first contact area on a first side, and by a second deflection element, which contacts the washer in a second contact area on a second side. The first contact area is displaced to the second contact area. The first and second deflection element can deflect the washer such that in clamped condition an electrical contact is achievable between the pole pieces and the semiconductor element.

Abstract: A bypass thyristor device includes a semiconductor device providing a thyristor with a cathode electrode on a cathode side, a gate electrode on the cathode side surrounded by the cathode electrode and an anode electrode on an anode side; an electrically conducting cover element arranged on the cathode side and in electrical contact with the cathode electrode on a contact side; and a gate contact element electrically connected to the gate electrode and arranged in a gate contact opening in the contact side of the cover element; wherein the cover element has a gas expansion volume in the contact side facing the cathode side, which gas expansion volume is interconnected with the gate contact opening for gas exchange.

Abstract: The invention relates to a semi-fabricated switching device comprising a semiconductor element and a housing comprising a spring system with a ring-shaped washer laterally surrounding the semiconductor element for clamping the semiconductor element between two pole pieces. The washer is deflectable between the pole pieces by a first deflection element, which contacts the washer in a first contact area on a first side, and by a second deflection element, which contacts the washer in a second contact area on a second side. The first contact area is displaced to the second contact area. The first and second deflection element can deflect the washer such that in clamped condition an electrical contact is achievable between the pole pieces and the semiconductor element.

Abstract: The present application relates to a turn-off power semiconductor device having a wafer with an active region and a termination region surrounding the active region, a rubber ring as an edge passivation for the wafer and a gate ring placed on a ring-shaped gate contact on the termination region for contacting the gate electrodes of a thyristor cell formed in the active region of the wafer. In the turn-off power semiconductor device, the outer circumferential surface of the gate ring is in contact with the rubber ring to define the inner border of the rubber ring. The area consumed by the ring-shaped gate contact on the termination or edge region can be minimized. The upper surface of the gate ring and the upper surface of the rubber ring form a continuous surface extending in a plane parallel to the first main side of the wafer.

Abstract: The present application relates to a turn-off power semiconductor device having a wafer with an active region and a termination region surrounding the active region, a rubber ring as an edge passivation for the wafer and a gate ring placed on a ring-shaped gate contact on the termination region for contacting the gate electrodes of a thyristor cell formed in the active region of the wafer. In the turn-off power semiconductor device, the outer circumferential surface of the gate ring is in contact with the rubber ring to define the inner border of the rubber ring. The area consumed by the ring-shaped gate contact on the termination or edge region can be minimized. The upper surface of the gate ring and the upper surface of the rubber ring form a continuous surface extending in a plane parallel to the first main side of the wafer.

Abstract: An exemplary current switching device includes an integrated gate-commutated thyristor with an anode, a cathode, and a gate, wherein a current between the anode and the cathode is interruptible by applying a switch-off voltage to the gate; and a gate unit for generating the switch-off voltage. The gate unit and a connection of the gate unit to the gate establish a gate circuit having a stray impedance. The gate unit is adapted for generating a spiked switch-off voltage with a maximum above a breakdown voltage (VGRMAX) between the cathode and the gate, such that the switch-off voltage at the gate stays below the breakdown voltage (VGRMAX) due to the stray impedance of the gate circuit.

Abstract: A high-power semiconductor module is disclosed, which can include a high-power semiconductor device mounted on the module and at least two electrical connections. The module can include a short-circuit device mounted on the module. The short-circuit device can generate a persistent electrically conducting path between the two electrical connections upon receiving a trigger signal by electrically destroying a semiconductor of the high-power semiconductor module.

Abstract: A high-power semiconductor module is disclosed, which can include a high-power semiconductor device mounted on the module and at least two electrical connections. The module can include a short-circuit device mounted on the module. The short-circuit device can generate a persistent electrically conducting path between the two electrical connections upon receiving a trigger signal by electrically destroying a semiconductor of the high-power semiconductor module.

Abstract: An exemplary current switching device includes an integrated gate-commutated thyristor with an anode, a cathode, and a gate, wherein a current between the anode and the cathode is interruptible by applying a switch-off voltage to the gate; and a gate unit for generating the switch-off voltage. The gate unit and a connection of the gate unit to the gate establish a gate zcircuit having a stray impedance. The gate unit is adapted for generating a spiked switch-off voltage with a maximum above a breakdown voltage (VGRMAX) between the cathode and the gate, such that the switch-off voltage at the gate stays below the breakdown voltage (VGRMAX) due to the stray impedance of the gate circuit.

Abstract: The present disclosure provides a semiconductor switching device including a substrate having deposited thereon a cathode, an anode and a gate of the semiconductor switching device, and a connection means for electrically connecting the cathode in the gate of the semiconductor switching device to an external circuit unit. The connection includes a cathode-gate connection unit having a coaxial structure including a gate conductor and a cathode conductor for electrically connecting the cathode and the gate of the semiconductor switching device to the external circuit unit.

Abstract: A diode for fast switching applications includes a base layer of a first conductivity type with a first main side and a second main side opposite the first main side, an anode layer of a second conductivity type, which is arranged on the second main side, a plurality of first zones of the first conductivity type with a higher doping concentration than the base layer, and a plurality of second zones of the second conductivity type. The first and second zones are arranged alternately on the first main side. A cathode electrode is arranged on top of the first and second zones on the side of the zones which lies opposite the base layer, and a anode electrode is arranged on top of the anode layer on the side of the anode layer which lies opposite the base layer. The base layer includes a first sublayer, which is formed by the second main sided part of the base layer, and a second sublayer, which is formed by the first main sided part of the base layer.