Abstract: A substrate processing apparatus includes a processing chamber configured to process a substrate, a substrate support member provided within the processing chamber to support the substrate, a microwave generator provided outside the processing chamber, a waveguide launch port configured to supply a microwave generated by the microwave generator into the processing chamber, wherein the central position of the waveguide launch port is deviated from the central position of the substrate supported on the substrate support member and the waveguide launch port faces a portion of a front surface of the substrate supported on the substrate support member, and a control unit configured to change a relative position of the substrate support member in a horizontal direction with respect to the waveguide launch port.

Abstract: Provided are a substrate processing apparatus and a method of manufacturing a semiconductor device that are capable of uniformly heating a substrate while reducing an increase in substrate temperature to reduce a thermal budget. The substrate processing apparatus includes a process chamber configured to process a substrate; a substrate support unit installed in the process chamber to support the substrate; a microwave supply unit configured to supply a microwave toward a process surface of the substrate supported by the substrate support unit, the microwave supply unit including a microwave radiating unit radiating the microwave supplied from a microwave source to the process chamber while rotating; a partition installed between the microwave supply unit and the substrate support unit; a cooling unit installed at the substrate support unit; and a control unit configured to control at least the substrate support unit, the microwave supply unit and the cooling unit.

Abstract: A substrate processing apparatus includes a processing chamber configured to process a substrate, a substrate support member provided within the processing chamber to support the substrate, a microwave generator provided outside the processing chamber, a waveguide launch port configured to supply a microwave generated by the microwave generator into the processing chamber, wherein the central position of the waveguide launch port is deviated from the central position of the substrate supported on the substrate support member and the waveguide launch port faces a portion of a front surface of the substrate supported on the substrate support member, and a control unit configured to change a relative position of the substrate support member in a horizontal direction with respect to the waveguide launch port.

Abstract: A substrate processing apparatus includes a processing chamber configured to process a substrate having a front surface including a dielectric, a substrate support member provided within the processing chamber to support the substrate, a microwave supplying unit configured to supply a microwave to a front surface side of the substrate supported on the substrate support member; and a conductive substrate cooling unit which is provided at a rear surface side of the substrate supported on the substrate support member and has an opposing surface facing the rear surface of the substrate. A distance between the top of the substrate support member and the opposing surface of the substrate cooling unit corresponds to an odd multiple of ¼ wavelength of the microwave supplied when the substrate is processed.

Abstract: There is provided a substrate processing apparatus that can easily grasp the relationship of a defect substrate between plural batches. A substrate processing apparatus 10 includes: a display unit 16; a storage unit that accumulates and stores production information of the substrate for each batch, the production information being produced when the substrate is processed; a selection receiving unit that receives the selection of plural batches stored in the storage unit; and a display control unit that controls such that substrate information is displayed on the display part, the substrate information being information relating to a state in which the substrates are held the substrate holding part in the plural batches received by the selection receiving unit.

Abstract: The invention relates to the acquisition of log data in an apparatus such as a substrate processing apparatus. The invention permits detailed data related to a premonitory phenomenon preceding the occurrence of an alarm condition to be acquired without increasing the amount of data. A data logging method of the invention has a constitution wherein a difference between the maximum value and the minimum value of the acquired data is determined, wherein a first segment of the acquired data is stored if the difference is not less than a preset value, and if the difference is less than the preset value, a second portion included in the first segment of the acquired data is stored.

Abstract: An unprocessed substrate is conveyed to a film-processing chamber at the same time a processed substrate is conveyed to a substrate preparation chamber, reducing the substrate processing cycle, thereby increasing the yield per unit time. The substrate preparation chamber has a two-tiered structure for receiving processed substrates and unprocessed substrates. A two-tiered transfer robot allows the substrates to be removed or placed into the preparation and process chambers at the same time, thus decreasing the cycle time for processing a substrate.

Abstract: Throughput is increased, the footprint is reduced, heating may be carried out in a short time, and variations in the temperature of the substrate surface may be reduced. A heating chamber 47 for heating the substrate is formed as an upper level of a load/lock chamber 13, and a cooling chamber 48 for cooling the substrate is formed as a lower level of the load/lock chamber 13. An upper heater 51 and a lower heater 56 are formed above and below the heating chamber 47. A shower plate 52 is located between the upper heater 51 and the lower heater 56. A gas heating space 50 is located between the upper heater 51 and the shower plate 52. An N2 gas introducer 42 is connected to the gas heating space 50, such that N2 gas is introduced into the gas heating space 50. The N2 gas introduced from the N2 gas introducer 42 is heated in the gas heating space 50 and is then supplied to the substrate W in the form of a shower via the shower plate 52.

Abstract: A rotary shaft is supported by a frame so as to be rotatable and movable vertically relative to the frame. A carrying arm is pivoted to the rotary shaft and a substrate receiver is attached to an end of the carrying arm and receives a substrate. A guide base is mounted on the rotary shaft on the lower side of the substrate receiver in such a manner that the guide base is approximately parallel to the substrate receiver, and a substrate alignment mechanism is attached to the rotary shaft via the guide base. The substrate alignment mechanism includes a pair of location correcting members which are coupled to air cylinders. The location correcting members are displaced by air cylinders to correct the location of substrate.

Abstract: A substrate heating equipment for use in a semiconductor fabricating apparatus includes a heater support frame disposed within a vacuum vessel, opposed panel heaters disposed in a pluri-shelved fashion within the heater support frame, and support means for supporting a substrate to be treated between an adjacent pair of the opposed panel heaters, whereby simultaneous heating of plural substrates to be treated is enabled. By controlling the individual temperature of the panel heaters, it also becomes possible to significantly reduce a tact time and to effect uniform heating of the substrates while the equipment is rendered compact.