Abstract: A resist pattern formed by a method including forming a resist film by applying, on a substrate, a resist composition containing a base material having a solubility, in a developer liquid containing an organic solvent, that decreases according to an action of an acid, a compound which generates an acid upon irradiation, and a solvent; exposing the resist film; developing the exposed resist film; forming a first coating film by applying, on the resist pattern, a first coating forming agent containing a resin having a solubility in an organic solvent that decreases under action of an acid, and a solvent; and heating the resist pattern on which the first coating forming agent has been applied.

Abstract: There are provided a method of forming a resist pattern includes: a step (1) in which a resist composition containing a base component (A) that generates base upon exposure and exhibits increased solubility in an alkali developing solution by the action of acid is applied to a substrate to form a resist film; a step (2) in which the resist film 2 is subjected to exposure; a step (3) in which baking is conducted after the step (2); and a step (4) in which the resist film 2 is subjected to an alkali development, thereby forming a negative-tone resist pattern in which the unexposed portion 2b of the resist film 2 has been dissolved and removed, and the resist composition used in the step (1).

Abstract: A resist composition including a base component (A) which exhibits changed solubility in a developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the base component (A) containing a polymeric compound (A1) having a structural unit (a5) represented by general formula (a5-0) shown below (R1 represents a sulfur atom or an oxygen atom; R2 represents a single bond or a divalent linking group; and Y represents an aromatic hydrocarbon group or an aliphatic hydrocarbon group having a polycyclic group, provided that the aromatic hydrocarbon group or the aliphatic hydrocarbon may have a carbon atom or a hydrogen atom thereof substituted with a substituent.

Abstract: A substrate processing apparatus including a transfer unit for transferring, under reduced pressure, a laminate including a wafer and a support plate which are bonded to each other and supported by use of support pins that supports an inner periphery of a first surface of the wafer, the first surface being opposite to a second surface of the wafer onto which a second surface the support plate is bonded.

Abstract: The present invention relates to a resist composition for EUV or EB containing a base component (A) which generates acid upon exposure and exhibits changed solubility in a developing solution by the action of acid, and a resin component (W) that contains at least one atom selected from a fluorine atom or a silicon atom and contains a polarity conversion group that exhibits increased polarity after decomposition by the action of base, wherein the base component (A) contains a component (A1) which contains a structural unit (a0) having a group represented by general formula (a0-1) or (a0-2) shown below, and the amount of the resin component (W) relative to 100 parts by weight of the base component (A) is 1 to 15 parts by weight.

Abstract: A method of forming a resist pattern, including: a step (1) in which a resist film is formed by coating a resist composition including a base component (A) that exhibits increased solubility in an alkali developing solution, a photo-base generator component (C) that generates a base upon exposure, an acid supply component (Z) and a compound (F) containing at least one selected from the group consisting of a fluorine atom and a silicon atom and containing no acid decomposable group which exhibits increased polarity by the action of acid on a substrate; a step (2) in which the resist film is subjected to exposure; a step (3) in which baking is conducted after the step (2); and a step (4) in which the resist film is subjected to an alkali development, thereby forming a negative-tone resist pattern, and a resist composition used in the step (1).

Abstract: An adhesive composition including a hydrocarbon resin, a modified elastomer that is bonded with at least one functional group-containing atom group, and a solvent.

Abstract: A resist composition used in a method of forming a resist pattern including applying a resist composition comprising a base component that exhibits increased solubility in an alkali developing solution and a photo-base generator component to a substrate to form a resist film; subjecting the resist film to exposure; baking after subjecting the resist film to exposure, wherein at an exposed portion of the resist film, the base generated from the photo-base generator component upon exposure and an acid provided to the resist film in advance are neutralized, and at an unexposed portion of the resist film, the solubility of the base component in an alkali developing solution is increased by the action of acid provided to the resist film in advance; and subjecting the resist film to alkali development, thereby forming a negative-tone resist pattern.

Abstract: A fluorine-containing polymeric compound which contains a structural unit (f1) that is decomposable in an alkali developing solution as a block copolymer portion, a base component (A) that exhibits increased solubility in an alkali developing solution under the action of acid, and an acid generator component (B) that generates acid upon exposure.