Patents by Inventor Tom E. Blomberg
Tom E. Blomberg has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10662533Abstract: Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.Type: GrantFiled: April 22, 2019Date of Patent: May 26, 2020Assignee: ASM IP Holding B.V.Inventors: Tom E. Blomberg, Varun Sharma, Suvi P. Haukka, Marko J. Tuominen, Chiyu Zhu
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Patent number: 10643925Abstract: An atomic layer deposition (ALD) process for depositing a fluorine-containing thin film on a substrate can include a plurality of super-cycles. Each super-cycle may include a metal fluoride sub-cycle and a reducing sub-cycle. The metal fluoride sub-cycle may include contacting the substrate with a metal fluoride. The reducing sub-cycle may include alternately and sequentially contacting the substrate with a reducing agent and a nitrogen reactant.Type: GrantFiled: April 17, 2014Date of Patent: May 5, 2020Assignee: ASM IP Holding B.V.Inventors: Tom E. Blomberg, Linda Lindroos, Hannu Huotari
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Patent number: 10553440Abstract: In one aspect, methods of silicidation and germanidation are provided. In some embodiments, methods for forming metal silicide can include forming a non-oxide interface, such as germanium or solid antimony, over exposed silicon regions of a substrate. Metal oxide is formed over the interface layer. Annealing and reducing causes metal from the metal oxide to react with the underlying silicon and form metal silicide. Additionally, metal germanide can be formed by reduction of metal oxide over germanium, whether or not any underlying silicon is also silicided. In other embodiments, nickel is deposited directly and an interface layer is not used. In another aspect, methods of depositing nickel thin films by vapor phase deposition processes are provided. In some embodiments, nickel thin films are deposited by ALD. Nickel thin films can be used directly in silicidation and germanidation processes.Type: GrantFiled: June 20, 2016Date of Patent: February 4, 2020Assignee: ASM International N.V.Inventors: Viljami J. Pore, Suvi P. Haukka, Tom E. Blomberg, Eva E. Tois
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Publication number: 20200010953Abstract: Methods are provided for selectively depositing a material on a first metal or metallic surface of a substrate relative to a second, dielectric surface of the substrate, or for selectively depositing metal oxides on a first metal oxide surface of a substrate relative to a second silicon oxide surface. The selectively deposited material can be, for example, a metal, metal oxide, metal nitride, metal silicide, metal carbide and/or dielectric material. In some embodiments a substrate comprising a first metal or metallic surface and a second dielectric surface is alternately and sequentially contacted with a first vapor-phase metal halide reactant and a second reactant. In some embodiments a substrate comprising a first metal oxide surface and a second silicon oxide surface is alternately and sequentially contacted with a first vapor phase metal fluoride or chloride reactant and water.Type: ApplicationFiled: September 18, 2019Publication date: January 9, 2020Inventors: Suvi P. Haukka, Raija H. Matero, Elina Färm, Tom E. Blomberg
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Publication number: 20200002810Abstract: The present invention relates generally to methods and apparatus for the controlled growing of material on substrates. According to embodiments of the present invention, a precursor feed is controlled in order to provide an optimal pulse profile. This may be accomplished by splitting the feed into two paths. One of the paths is restricted in a continuous manner. The other path is restricted in a periodic manner. The output of the two paths converges at a point prior to entry of the reactor. Therefore, a single precursor source is able to fed precursor in to a reactor under two different conditions, one which can be seen as mimicking ALD conditions and one which can be seen as mimicking CVD conditions. This allows for an otherwise single mode reactor to be operated in a plurality of modes including one or more ALD/CVD combination modes. Additionally, the pulse profile of each pulse can be modified.Type: ApplicationFiled: September 10, 2019Publication date: January 2, 2020Inventors: Hannu Huotari, Tom E. Blomberg
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Patent number: 10513772Abstract: Methods are disclosed herein for depositing a passivation layer comprising fluorine over a dielectric material that is sensitive to chlorine, bromine, and iodine. The passivation layer can protect the sensitive dielectric layer thereby enabling deposition using precursors comprising chlorine, bromine, and iodine over the passivation layer.Type: GrantFiled: October 14, 2010Date of Patent: December 24, 2019Assignee: ASM International N.V.Inventors: Tom E. Blomberg, Eva E. Tois, Robert Huggare, Jan Willem Maes, Vladimir Machkaoutsan, Dieter Pierreux
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Patent number: 10428419Abstract: The present invention relates generally to methods and apparatus for the controlled growing of material on substrates. According to embodiments of the present invention, a precursor feed is controlled in order to provide an optimal pulse profile. This may be accomplished by splitting the feed into two paths. One of the paths is restricted in a continuous manner. The other path is restricted in a periodic manner. The output of the two paths converges at a point prior to entry of the reactor. Therefore, a single precursor source is able to fed precursor in to a reactor under two different conditions, one which can be seen as mimicking ALD conditions and one which can be seen as mimicking CVD conditions. This allows for an otherwise single mode reactor to be operated in a plurality of modes including one or more ALD/CVD combination modes. Additionally, the pulse profile of each pulse can be modified.Type: GrantFiled: September 11, 2017Date of Patent: October 1, 2019Assignee: ASM IP Holding B.V.Inventors: Hannu Huotari, Tom E. Blomberg
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Patent number: 10428421Abstract: Methods are provided for selectively depositing a material on a first metal or metallic surface of a substrate relative to a second, dielectric surface of the substrate, or for selectively depositing metal oxides on a first metal oxide surface of a substrate relative to a second silicon oxide surface. The selectively deposited material can be, for example, a metal, metal oxide, metal nitride, metal silicide, metal carbide and/or dielectric material. In some embodiments a substrate comprising a first metal or metallic surface and a second dielectric surface is alternately and sequentially contacted with a first vapor-phase metal halide reactant and a second reactant. In some embodiments a substrate comprising a first metal oxide surface and a second silicon oxide surface is alternately and sequentially contacted with a first vapor phase metal fluoride or chloride reactant and water.Type: GrantFiled: July 27, 2016Date of Patent: October 1, 2019Assignee: ASM IP Holding B.V.Inventors: Suvi P. Haukka, Raija H. Matero, Elina Färm, Tom E. Blomberg
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Publication number: 20190249312Abstract: Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.Type: ApplicationFiled: April 22, 2019Publication date: August 15, 2019Inventors: Tom E. Blomberg, Varun Sharma, Suvi P. Haukka, Marko J. Tuominen, Chiyu Zhu
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Publication number: 20190242019Abstract: Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.Type: ApplicationFiled: April 22, 2019Publication date: August 8, 2019Inventors: Tom E. Blomberg, Varun Sharma, Suvi Haukka, Marko Tuominen, Chiyu Zhu
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Publication number: 20190244786Abstract: Atomic layer etching (ALE) processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase non-metal halide reactant and a second vapor phase halide reactant. In some embodiments both the first and second reactants are chloride reactants. In some embodiments the first reactant is fluorinating gas and the second reactant is a chlorinating gas. In some embodiments a thermal ALE cycle is used in which the substrate is not contacted with a plasma reactant.Type: ApplicationFiled: April 22, 2019Publication date: August 8, 2019Inventors: Tom E. Blomberg, Varun Sharma, Suvi P. Haukka, Marko J. Tuominen, Chiyu Zhu
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Patent number: 10280519Abstract: Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.Type: GrantFiled: December 7, 2017Date of Patent: May 7, 2019Assignee: ASM IP HOLDING B.V.Inventors: Tom E. Blomberg, Varun Sharma, Suvi Haukka, Marko Tuominen, Chiyu Zhu
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Patent number: 10283319Abstract: Atomic layer etching (ALE) processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase non-metal halide reactant and a second vapor phase halide reactant. In some embodiments both the first and second reactants are chloride reactants. In some embodiments the first reactant is fluorinating gas and the second reactant is a chlorinating gas. In some embodiments a thermal ALE cycle is used in which the substrate is not contacted with a plasma reactant.Type: GrantFiled: December 7, 2017Date of Patent: May 7, 2019Assignee: ASM IP HOLDING B.V.Inventors: Tom E. Blomberg, Varun Sharma, Suvi Haukka, Marko Tuominen, Chiyu Zhu
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Patent number: 10273584Abstract: Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.Type: GrantFiled: December 7, 2017Date of Patent: April 30, 2019Assignee: ASM IP HOLDING B.V.Inventors: Tom E. Blomberg, Varun Sharma, Suvi Haukka, Marko Tuominen, Chiyu Zhu
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Publication number: 20190103266Abstract: Antimony oxide thin films are deposited by atomic layer deposition using an antimony reactant and an oxygen source. Antimony reactants may include antimony halides, such as SbCl3, antimony alkylamines, and antimony alkoxides, such as Sb(OEt)3. The oxygen source may be, for example, ozone. In some embodiments the antimony oxide thin films are deposited in a batch reactor. The antimony oxide thin films may serve, for example, as etch stop layers or sacrificial layers.Type: ApplicationFiled: August 20, 2018Publication date: April 4, 2019Inventors: Raija H. Matero, Linda Lindroos, Hessel Sprey, Jan Willem Maes, David de Roest, Dieter Pierreux, Kees van der Jeugd, Lucia D'Urzo, Tom E. Blomberg
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Publication number: 20190081149Abstract: In one aspect, methods of silicidation and germanidation are provided. In some embodiments, methods for forming metal silicide can include forming a non-oxide interface, such as germanium or solid antimony, over exposed silicon regions of a substrate. Metal oxide is formed over the interface layer. Annealing and reducing causes metal from the metal oxide to react with the underlying silicon and form metal silicide. Additionally, metal germanide can be formed by reduction of metal oxide over germanium, whether or not any underlying silicon is also silicided. In other embodiments, nickel is deposited directly and an interface layer is not used. In another aspect, methods of depositing nickel thin films by vapor phase deposition processes are provided. In some embodiments, nickel thin films are deposited by ALD.Type: ApplicationFiled: July 20, 2018Publication date: March 14, 2019Inventors: Viljami J. Pore, Suvi P. Haukka, Tom E. Blomberg, Eva E. Tois
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Patent number: 10074541Abstract: In one aspect, methods of forming smooth ternary metal nitride films, such as TixWyNz films, are provided. In some embodiments, the films are formed by an ALD process comprising multiple super-cycles, each super-cycle comprising two deposition sub-cycles. In one sub-cycle a metal nitride, such as TiN is deposited, for example from TiCl4 and NH3, and in the other sub-cycle an elemental metal, such as W, is deposited, for example from WF6 and Si2H6. The ratio of the numbers of each sub-cycle carried out within each super-cycle can be selected to achieve a film of the desired composition and having desired properties.Type: GrantFiled: July 10, 2017Date of Patent: September 11, 2018Assignee: ASM IP HOLDING B.V.Inventors: Tom E. Blomberg, Jaakko Anttila
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Patent number: 10056249Abstract: Antimony oxide thin films are deposited by atomic layer deposition using an antimony reactant and an oxygen source. Antimony reactants may include antimony halides, such as SbCl3, antimony alkylamines, and antimony alkoxides, such as Sb(OEt)3. The oxygen source may be, for example, ozone. In some embodiments the antimony oxide thin films are deposited in a batch reactor. The antimony oxide thin films may serve, for example, as etch stop layers or sacrificial layers.Type: GrantFiled: November 22, 2016Date of Patent: August 21, 2018Assignee: ASM International N.V.Inventors: Raija H. Matero, Linda Lindroos, Hessel Sprey, Jan Willem Maes, David de Roest, Dieter Pierreux, Kees van der Jeugd, Lucia D'Urzo, Tom E. Blomberg
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Patent number: 10043880Abstract: In one aspect, methods of silicidation and germanidation are provided. In some embodiments, methods for forming metal silicide can include forming a non-oxide interface, such as germanium or solid antimony, over exposed silicon regions of a substrate. Metal oxide is formed over the interface layer. Annealing and reducing causes metal from the metal oxide to react with the underlying silicon and form metal silicide. Additionally, metal germanide can be formed by reduction of metal oxide over germanium, whether or not any underlying silicon is also silicided. In other embodiments, nickel is deposited directly and an interface layer is not used. In another aspect, methods of depositing nickel thin films by vapor phase deposition processes are provided. In some embodiments, nickel thin films are deposited by ALD.Type: GrantFiled: April 20, 2017Date of Patent: August 7, 2018Assignee: ASM INTERNATIONAL N.V.Inventors: Viljami J. Pore, Suvi P. Haukka, Tom E. Blomberg, Eva E. Tois
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Publication number: 20180212077Abstract: Deposition processes are disclosed herein for depositing thin films comprising a dielectric transition metal compound phase and a conductive or semiconducting transition metal compound phase on a substrate in a reaction space. Deposition processes can include a plurality of super-cycles. Each super-cycle may include a dielectric transition metal compound sub-cycle and a reducing sub-cycle. The dielectric transition metal compound sub-cycle may include contacting the substrate with a dielectric transition metal compound. The reducing sub-cycle may include alternately and sequentially contacting the substrate with a reducing agent and a nitrogen reactant. The thin film may comprise a dielectric transition metal compound phase embedded in a conductive or semiconducting transition metal compound phase.Type: ApplicationFiled: March 14, 2018Publication date: July 26, 2018Inventors: Tom E. Blomberg, Hannu Huotari