Abstract: Certain aspects of the present disclosure provide techniques for reporting an indication of a PHR when the UE's assigned of UL resources is insufficient to transmit both UL data and a PHR. Additionally, aspects described herein introduce a negative PHR used to indicate the UE requires additional UL resources.

Abstract: Method for producing novel diamond bodies having near-surface areas of reduced index of refraction which act as an anti-reflection layer. The method comprises displacing some of the ions present in the diamond lattice structure at said areas with preselected ions, such as of C, Si, Fe, Ni, Ti or Au, by ion implantation means to produce desired optical properties, such as for lens coatings. The ion-implanted diamond body preferably is subjected to high temperature post-annealing.

Abstract: A method of fabricating an infrared (IR) window (50) which has a high transmittance at IR frequencies includes the steps of providing a protective layer (52) and an IR substrate (54) each having a high IR transmittance. An inner surface (66) of the protective layer (52) and an outer surface (72) of the IR substrate (54) are contacted without adhesive therebetween. The protective layer (52) and the IR substrate (54) are annealed at a bonding temperature. Anti-reflection coatings (73), (74) can be applied to an outer surface (68) of the protective layer (52) and to an inner surface (70) of the IR substrate (54). The IR window (50) can be installed as a shield for an IR sensor mounted on an aircraft. The IR window (50) can be removed from the aircraft and the protective layer (52) and the IR substrate (54) can be debonded by heating the IR window (50) above the bonding temperature. The protective layer (52) and the IR substrate (54) can be separated and a new protective layer (52) can be provided.

Abstract: An electrically conductive infrared (IR) window (10) has high transmittance at IR wavelengths and includes an electrically conductive protective layer (14) which is direct bonded to a substrate (16) at room temperature without adhesive therebetween. The protective layer (14) and substrate (16) are transparent at IR wavelengths. The protective layer (14) and the substrate (16) are annealed at a bonding temperature above room temperature to enhance the bond strength. The protective layer (14) preferably comprises at least one of doped silicon and doped gallium arsenide and has a conductivity between 1 and 500 ohms/square. The substrate (16) preferably comprises at least one of zinc sulfide, zinc selenide, germanium, and gallium arsenide. The protective layer (14) and substrate (16) should be made of different materials with different coefficients of thermal expansion to allow debonding by heating above the bonding temperature.

Abstract: A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

Abstract: A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

Abstract: A photovoltaic device having characteristics of a high efficiency solar cell comprising a Cu.sub.x O/n-Si heterojunction. The Cu.sub.x O layer is formed by heating a deposited copper layer in an oxygen containing ambient.

Abstract: Highly efficient tin oxide-silicon heterojunction solar cells are prepared by heating a silicon substrate, having an insulating layer thereon, to provide a substrate temperature in the range of about 300.degree. C. to about 400.degree. C. and thereafter spraying the so-heated substrate with a solution of tin tetrachloride in a organic ester boiling below about 250.degree. C. Preferably the insulating layer is naturally grown silicon oxide layer.

Abstract: In preparing tin oxide and indium tin oxide-silicon heterojunction solar cells by electron beam sublimation of the oxide and subsequent deposition thereof on the silicon, the engineering efficiency of the resultant cell is enhanced by depositing the oxide at a predetermined favorable angle of incidence. Typically the angle of incidence is between 40.degree. and 70.degree. and preferably between 55.degree. and 65.degree. when the oxide is tin oxide and between 40.degree. and 70.degree. when the oxide deposited is indium tin oxide. giThe Government of the United States of America has rights in this invention pursuant to Department of Energy Contract No. EY-76-C-03-1283.

Abstract: A photovoltaic device for the conversion of light (preferably in the visible spectrum) to electrical current consists of at least two electrodes (one of which must be substantially transparent to the light), each electrode being made of different materials and in which one electrode comprises an element that has a work function (generally expressed in electron volts) greater than that of aluminum (e.g. gold or silver) and the other electrode comprises an element that has a work function equal to or less than that of aluminum (e.g., aluminum or magnesium). Sandwiched between and in contact with the electrodes is a photoresponsive organic layer comprising at least one organic compound which, in general, has the capacity to sensitize or de-sensitize silver halides, titanium dioxide, zinc oxide, cadmium sulfide, selenium and polyvinyl carbazole (examples of the organic compounds are the cyanine dyes, especially the merocyanine dyes).