Patents by Inventor Tom Hermann

Tom Hermann has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230349593
    Abstract: An energy meter apparatus includes a sensing unit including a first temperature sensor configured to measure temperature of the fluid at a first boundary of the system and a processing-reporting unit comprising a second temperature sensor configured to measure temperature of the fluid at a second boundary of the system. One or both of a flow sensor and a pressure sensor is included in one of the sensing unit and the processing-reporting unit, and the pressure sensor is included in one of the sensing units and the processing-reporting unit. The processing-reporting unit is configured to establish and maintain a first wireless communication channel for communication with the sensing unit. The sensing unit is configured to report sensor measurements to the processing-reporting unit via the wireless communication channel.
    Type: Application
    Filed: July 10, 2020
    Publication date: November 2, 2023
    Applicant: HBX CONTROL SYSTEMS INC.
    Inventors: Curtis BENNETT, Tom HERMANN
  • Patent number: 8835255
    Abstract: A method comprises providing a semiconductor structure comprising a substrate and a nanowire above the substrate. The nanowire comprises a first semiconductor material and extends in a vertical direction of the substrate. A material layer is formed above the substrate. The material layer annularly encloses the nanowire. A first part of the nanowire is selectively removed relative to the material layer. A second part of the nanowire is not removed. A distal end of the second part of the nanowire distal from the substrate is closer to the substrate than a surface of the material layer so that the semiconductor structure has a recess at the location of the nanowire. The distal end of the nanowire is exposed at the bottom of the recess. The recess is filled with a second semiconductor material. The second semiconductor material is differently doped than the first semiconductor material.
    Type: Grant
    Filed: January 23, 2013
    Date of Patent: September 16, 2014
    Assignee: GLOBALFOUNDRIES Inc.
    Inventors: Tim Baldauf, Stefan Flachowsky, Tom Hermann, Ralf Illgen