Patents by Inventor Tom Richter

Tom Richter has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220231125
    Abstract: A power semiconductor device includes a control cell for controlling a load current and electrically connected to a load terminal structure on one side and to a drift region on another side. The drift region includes dopants of a first conductivity type. The control cell includes: a mesa extending along a vertical direction and including a contact region having dopants of the first or second conductivity type and electrically connected to the load terminal structure, and a channel region coupled to the drift region; a control electrode configured to control a conduction channel in the channel region; and a contact plug including at least one of a doped semiconductive material or metal, and arranged in contact with the contact region. An electrical connection between the contact region and load terminal structure is established by the contact plug, a portion of which horizontally projects beyond lateral boundaries of the mesa.
    Type: Application
    Filed: April 8, 2022
    Publication date: July 21, 2022
    Inventors: Hans-Juergen Thees, Stefan Loesch, Marc Probst, Tom Richter, Olaf Storbeck
  • Patent number: 11322587
    Abstract: A power semiconductor device includes a control cell for controlling a load current. The control cell is electrically connected to a load terminal structure on one side and to a drift region on another side. The drift region includes dopants of a first conductivity type. The control cell includes: a mesa extending along a vertical direction and including: a contact region having dopants of the first conductivity type or of a second conductivity type and electrically connected to the load terminal structure, and a channel region coupled to the drift region; a control electrode configured to induce a conduction channel in the channel region; and a contact plug including a doped semiconductive material and arranged in contact with the contact region. An electrical connection between the contact region and load terminal structure is established by the contact plug, a portion of which projects beyond lateral boundaries of the mesa.
    Type: Grant
    Filed: June 13, 2020
    Date of Patent: May 3, 2022
    Assignee: Infineon Technologies Dresden GmbH & Co. KG
    Inventors: Hans-Juergen Thees, Stefan Loesch, Marc Probst, Tom Richter, Olaf Storbeck
  • Publication number: 20200395443
    Abstract: A power semiconductor device includes a control cell for controlling a load current. The control cell is electrically connected to a load terminal structure on one side and to a drift region on another side. The drift region includes dopants of a first conductivity type. The control cell includes: a mesa extending along a vertical direction and including: a contact region having dopants of the first conductivity type or of a second conductivity type and electrically connected to the load terminal structure, and a channel region coupled to the drift region; a control electrode configured to induce a conduction channel in the channel region; and a contact plug including a doped semiconductive material and arranged in contact with the contact region. An electrical connection between the contact region and load terminal structure is established by the contact plug, a portion of which projects beyond lateral boundaries of the mesa.
    Type: Application
    Filed: June 13, 2020
    Publication date: December 17, 2020
    Inventors: Hans-Juergen Thees, Stefan Loesch, Marc Probst, Tom Richter, Olaf Storbeck
  • Publication number: 20070243708
    Abstract: The present invention provides a manufacturing method for an integrated semiconductor contact structure having an improved Aluminum fill comprising the steps of: forming contact holes in an insulation layer provided on a wafer, said contact holes having a respective bottom and respective sidewalls, said bottoms including a respective conductive area; introducing said wafer into a first PVD deposition chamber, said first PVD deposition chamber including a wafer bias means; and cold depositing a first Aluminum layer on the wafer in said first PVD deposition chamber, said first Aluminum layer covering said bottoms and said sidewalls of said contact holes and forming a seed layer; wherein during said step of cold depositing said first Aluminum layer on the wafer in said first PVD deposition chamber said wafer bias means is set to a bias in the range between 20 W and 700 W or ?50 V to ?800 V.
    Type: Application
    Filed: April 12, 2006
    Publication date: October 18, 2007
    Inventors: Jens Hahn, Tom Richter, Detlef Weber, Chung-Hsin Lin
  • Publication number: 20040111195
    Abstract: The invention includes a marine telematics system comprising a satcom unit on a boat, a user interface for the satcom unit, a web-based user interface for the telematics system, and a land-based center of operations. The land-based center of operations receives signals from the satcom unit on the boat about the location of the boat and sensor responses to detectable events. The marine telematics system is customizable through a web-based interface, allowing boat owners to provide information and instructions to the land-based center of operations for handling particular situations that may arise while the boat is in use or at dock. The web-based interface further allows boat owners to plan voyages by setting series of waypoints, and the land-based center of operations may assist the boat owners by providing feedback during their voyages based on the waypoint information previously provided by the boat owners.
    Type: Application
    Filed: June 4, 2003
    Publication date: June 10, 2004
    Inventors: Jeroen Joost de Vries, Mike Meyer, Andy Turnbull, Eddie Szilagyi, Michael Gudmunds, Per Kaiser, Esbjorn Sjoberg, David Sward, Tom Richter, Noah Gates, Michael Siebert, Dara Holmes Heed, Denis D'Souza, David Roscoe